Claims
- 1. A method for fabricating optical, electronic or opto-electronic substrates, which comprises interposing an amorphous material in between a first layer of a first material and a second layer of a second material that is less noble than the first material to provide a surface that facilitates direct bonding of the first layer to the second layer.
- 2. The method of claim 1 wherein the substrate is a semiconductor wafer.
- 3. The method of claim 1 wherein the first material is a monocrystalline material.
- 4. The method of claim 1 wherein the first material is monocrystalline silicon carbide.
- 5. The method of claim 1 wherein the second material is a polycrystalline material.
- 6. The method of claim 1 wherein the second material is polycrystalline silicon.
- 7. The method of claim 1 wherein the amorphous material is amorphous silicon.
- 8. The method of claim 1 wherein the amorphous material has a polished surface to further facilitate bonding of the layers.
- 9. The method of claim 1 which further comprises depositing the amorphous material on the first layer prior to bonding the layers together.
- 10. The method of claim 9 which further comprises depositing a layer of an insulator on the amorphous layer prior to bonding the second layer to the insulator.
- 11. The method of claim 1 which further comprises depositing the amorphous material on the second layer prior to bonding the layers together.
- 12. The method of claim 1 which further comprises implanting atomic species in the second layer prior to bonding the layers together.
- 13. The method of claim 1 wherein the first material is monocrystalline silicon carbide, the second material is polycrystalline silicon, the second layer is polished, and the amorphous material is amorphous silicon, with the amorphous material being applied to the first layer and polished to provide a polished surface to further facilitate bonding to the polished surface of the second layer.
- 14. An optic, electronic or opto-electronic substrate, comprising:
a first layer of a first material a second layer of a second material that is less noble than the first material; and an amorphous material that is present between the first and second layers material for direct bonding the first and second layers together.
- 15. The substrate of claim 14 wherein the first material is a monocrystalline material.
- 16. The substrate of claim 14 wherein the first material is monocrystalline silicon carbide.
- 17. The substrate of claim 14 wherein the second material is a polycrystalline material.
- 18. The substrate of claim 14 wherein the second material is polycrystalline silicon.
- 19. The substrate of claim 14 wherein the amorphous material is amorphous silicon.
- 20. The substrate of claim 14 which further comprises a layer of an insulator on the amorphous layer between the amorphous material and the second layer.
- 21. The substrate of claim 14 wherein the second layer includes implanted atomic species.
- 22. The substrate of claim 14 wherein the first material is monocrystalline silicon carbide, the second material is polycrystalline silicon and the amorphous material is amorphous silicon.
- 23. A method of fabricating an optic, electronic or opto-electronic substrate comprising:
providing an amorphous material layer on a surface of a first material; and bonding an active layer of a second material to the amorphous material layer and first material, wherein the active layer or the support includes a polycrystalline material at least on its surface that is to be bonded.
Priority Claims (1)
Number |
Date |
Country |
Kind |
00/07755 |
Jun 2000 |
FR |
|
CROSS-REFERENCE TO RELATED PATENT APPLICATION
[0001] This is a continuation of the U.S. national stage designation of International Application No. PCT/FR01/01876 filed Jun. 15, 2001, the entire content of which is expressly incorporated herein.
Continuations (1)
|
Number |
Date |
Country |
Parent |
PCT/FR01/01876 |
Jun 2001 |
US |
Child |
10320063 |
Dec 2002 |
US |