Claims
- 1. A method of growing a cadmium telluride layer on a silicon layer, said method comprising the steps of:
- providing a silicon layer having a first lattice constant;
- forming a first buffer layer over said silicon layer, said first buffer layer comprising a zinc sulfide buffer layer and having a second lattice constant;
- forming a second buffer layer over said first buffer layer, said second buffer layer having third lattice constant; and
- forming a cadmium telluride layer over said second buffer layer, said cadmium telluride layer having a fourth lattice constant;
- wherein:
- said second lattice constant is between said first lattice constant and said third lattice constant and
- said third lattice constant is between said second lattice constant and said fourth lattice constant.
- 2. The method of claim 1 further comprising:
- forming a third buffer layer over said second buffer layer such that said cadmium telluride layer is formed over said third buffer layer, said third buffer layer having a fifth lattice constant which is between said third lattice constant and said fourth lattice constant.
- 3. The method of claim 2 wherein:
- said second buffer layer comprises a zinc selenide layer; and
- said third buffer layer comprises a zinc telluride layer.
- 4. The method of claim 1 wherein said steps of forming a first buffer layer, forming a second buffer layer, and forming a cadmium telluride layer, each comprise:
- forming a layer by molecular beam epitaxy.
- 5. The method of claim 1 wherein said steps of forming a first buffer layer, forming a second buffer layer, and forming a cadmium telluride layer, each comprise:
- forming a layer by metalorganic chemical vapor deposition.
- 6. The method of claim 1 wherein said steps of forming a first buffer layer, forming a second buffer layer, and forming a cadmium telluride layer, each comprise:
- forming a layer by liquid phase epitaxy.
- 7. A method of growing a cadmium telluride layer on a silicon layer, said method comprising:
- a) providing a silicon layer having a first lattice constant;
- b) forming a buffer layer over said silicon layer; and
- c) forming a cadmium telluride layer over said buffer layer, said cadmium telluride layer having a second lattice constant;
- wherein:
- 1) said buffer layer includes:
- b1) a first interface between the buffer layer and the silicon layer; and
- b2) a second interface between the buffer layer and the cadmium telluride layer;
- 2) said buffer layer comprises five to fifteen ZnTe.sub.y Se.sub.1-y layers; and
- 3) y is equal to about 0.0 near the first interface and gradually increases to 1.0 near the second interface.
- 8. A method of growing a cadmium telluride layer on a silicon layer, said method comprising:
- a) providing a silicon layer having a first lattice constant;
- b) forming a buffer layer over said silicon layer; and
- c) forming a cadmium telluride layer over said buffer layer, said cadmium telluride layer having a second lattice constant;
- wherein:
- 1) said buffer layer includes:
- b1) a first interface between the buffer layer and the silicon layer; and
- b2) a second interface between the buffer layer and the cadmium telluride layer;
- 2) said buffer layer comprises a continuously graded layer of ZnTe.sub.y Se.sub.1-y ; and
- 3) y is equal to about 0.0 near the first interface and gradually increases to 1.0 near the second interface.
CROSS-REFERENCE TO RELATED APPLICATIONS
This application is a divisional of:
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Divisions (1)
|
Number |
Date |
Country |
Parent |
724267 |
Sep 1996 |
|