Claims
- 1. A method for forming a connection between cables or wires wherein said cables or wires are comprised of a conductor surrounded by a first semiconductor layer, surrounded by an insulator layer, surrounded by a second outer semiconductor layer, said method comprising the steps of:
- positioning the ends of two cables in electrical contact with an electrical conductor;
- applying a cross-linkable reinforcing insulation layer around said electrical conductor and around said insulator layer of each of said cables or wires;
- providing a heat shrinkable tube around said reinforcing insulating layer and around the outer semiconductor layer of each of said cables or wires, said tube comprising an integrated assembly of a semiconductive member and a specific insulated portion containing insulation material, said tube comprising two cylindrical heat shrinkable semiconductive members combined with each other but electrically separated from each other by said insulation material of the specific insulated portion; and
- heating said tube under pressure in order to cross-link said reinforcing insulation layer and cause said reinforcing insulation layer to become integrated with said heat shrinkable tube and electrically bond said semiconductive members of said tube to said outer semiconductor layer of each of said cables or wires.
- 2. The method as defined in claim 1, wherein said tube comprising an integrated assembly of a semiconductive member and a specific insulated portion comprises two cylindrical heat shrinkable semiconductive members arranged end-to-end, and a specific insulated portion consisting of said two cylindrical heat shrinkable semiconductive members surrounded and joined at the adjacent ends thereof by said insulation material.
- 3. The method of claim 1, wherein said pressurization is conducted using a pressurizing container and introducing an inert gas into said pressurizing container.
- 4. The method of claim 1, wherein said reinforcing insulation layer is formed by pouring rubber or a plastic material into a metal mold.
- 5. The method of claim 1, wherein said two heat shrinkable semiconductive members are combined such that they overlap each other partly.
- 6. The method of claim 1, wherein one end portion of each of said at least two semiconductive member is folded.
- 7. The method of claim 2, wherein said two heat shrinkable semiconductive members are combined such that they partially overlap each other at the adjacent ends thereof.
- 8. The method of claim 2, wherein a portion of each adjacent end of said two semiconductive layers is folded back upon itself.
- 9. Method as defined in claim 1, wherein the reinforcing insulation layer is applied by winding a tape around said electrical conductor and around said insulator layer of each of said cables or wires, and said heating under pressure is effected to simultaneously heat mold reinforcing insulation layer and said heat shrinkable tube.
- 10. Method as defined in claim 9, wherein the pressure is effected by gas pressure.
- 11. Method as defined in claim 1, wherein the reinforcing insulation layer is applied by pouring a reinforcing insulation material into a metal mold around said electrical conductor and around said insulator layer of each of said cables or wires, and said heating under pressure is effected to simultaneously heat mold said reinforcing insulation layer and said heat shrinkable tube.
- 12. Method as defined in claim 11, wherein the pressure is effected by gas pressure.
- 13. Method as defined in claim 11, wherein the pressure is applied by winding a vulcanized tape around the heat shrinkable tube.
- 14. Method as defined in claim 1, wherein electron beams are bombarded onto the specific insulated portion so that the shrink ratio of the specific insulated portion is smaller than the shrink ratio of the remainder of the heat shrinkable tube.
- 15. Method as defined in claim 1, wherein the pressure is effected by a fluid or gas pressure of 5 kg/cm.sup.2.
- 16. Method as defined in claim 1, wherein said electrical connector is provided with a semiconductive layer before the reinforcing insulation layer is applied.
Priority Claims (2)
Number |
Date |
Country |
Kind |
54-87641 |
Jul 1979 |
JPX |
|
54-87642 |
Jul 1979 |
JPX |
|
Parent Case Info
This is a continuation of application Ser. No. 366,964, filed Apr. 9, 1982, now abandoned, which is a continuation of application Ser. No. 168,228 filed July 10, 1980 now abandoned.
US Referenced Citations (9)
Continuations (2)
|
Number |
Date |
Country |
Parent |
366964 |
Apr 1982 |
|
Parent |
168228 |
Jul 1980 |
|