Claims
- 1. An ESD protection arrangement comprising first and second depletion mode MOSFETs connected in series drain-to-drain between an input terminal and an output terminal of the first ESD protection circuit, each of said first and second MOSFETs having a gate, a body and a source shorted together, a common node between said first and second MOSFETs being connected to ground through a first diode, the source terminal of said second MOSFET being connected to ground through a second diode, said first MOSFET being connected through a second series resistor to the input terminal and through said second series resistor and a series combination of third and fourth diodes to ground, said third and fourth diodes being connected with opposed polarities in said series combination.
Parent Case Info
This application is a continuation of application Ser. No. 08/472,943, filed Jun. 6, 1995, U.s. Pat. No. 5,677,205, which is a divisional of application Ser. No. 08/326,172 filed Oct. 19, 1994, U.S. Pat. No. 5,545,909.
US Referenced Citations (1)
Number |
Name |
Date |
Kind |
5060037 |
Rountree |
Oct 1991 |
|
Foreign Referenced Citations (1)
Number |
Date |
Country |
0401410A1 |
Dec 1990 |
EPX |
Non-Patent Literature Citations (1)
Entry |
Radio Fernsehen Electronik, vol. 42, No. 2, Feb. 1, 1993, p. 61 XP 000407295 `Announcement`. |
Divisions (1)
|
Number |
Date |
Country |
Parent |
326172 |
Oct 1994 |
|
Continuations (1)
|
Number |
Date |
Country |
Parent |
472943 |
Jun 1995 |
|