Claims
- 1. A method for forming an organic film comprising the steps of:
- forming an organic buffer film on a substrate with the molecules of said film oriented by Langmuir-Blogett's technique;
- forming a charge-transfer organic film on said buffer film by vapor depositions wherein said buffer film is stearic acid metallic salt.
- 2. A method for forming an organic film of claim 1 wherein said organic film is selected to possess superconductivity.
- 3. A method for forming an organic film of claim 1 wherein said organic buffer film is made from stearic acid and/or stearic acid metallic salt.
- 4. A method for forming an organic film of claim 1 wherein said charge-transfer film is a (BEDT-TTF).sub.2 I.sub.3 film.
- 5. A method for forming an organic film of claim 1 wherein said charge-transfer organic film is formed by evaporating a charge-transfer source at a temperature from 250.degree. C. to 300.degree. C.
- 6. A method for forming an organic film of claim 4 wherein a temperature of said substrate is from room temperature to 50.degree. C.
- 7. A method for forming an organic film of claim 1 wherein a solution of said stearic acid prepared at a pH from 6 to 7 is used for said Langmuir-Blodgett's technique.
- 8. A method for forming an organic film of claim 1 wherein said stearic acid film forming step is repeated in order to laminate said stearic acid film in the form of a multi-layer comprising stearic acid monomolecular layers.
- 9. A method for forming an organic film of claim 1 further comprising a step of pressing said charge-transfer organic film.
- 10. A method for forming an organic film of claim 1 wherein said charge-transfer film is (BEDT-TTF).sub.2 Cu(SCN).sub.2 or (TMTSF).sub.2 ClO.sub.4.
- 11. A method for forming an organic film comprising the steps of:
- forming an organic buffer film on a substrate with the molecules of said film oriented by vapor deposition;
- forming a charge-transfer organic film on said buffer film by vapor deposition wherein said buffer film is stearic acid metallic salt.
- 12. A method for forming an organic film of claim 11 wherein said charge-transfer film is (BEDT-TTF).sub.2 I.sub.3.
- 13. A method for forming an organic film of claim 11 wherein said charge-transfer organic film is formed by evaporating a charge-transfer source at a temperature from 250.degree. C. to 350.degree. C.
- 14. A method for forming an organic film of claim 11 wherein a temperature of said substrate is from room temperature to 50.degree. C.
- 15. A method for forming an organic film of claim 11 further comprising a step of pressing said charge-transfer film.
- 16. A method for forming an organic film of claim 11 wherein said charge-transfer film is (BEDT-TTF).sub.2 Cu(SCN).sub.2 or (TMTSF).sub.2 ClO.sub.4.
- 17. A method for forming an organic film of claim 3 wherein said stearic acid and/or stearic acid metallic salt film has a molecular arrangement that stearic acid and/or stearic acid metallic salt molecules are oriented substantially in a direction perpendicular to said substrate.
- 18. A method for forming an organic film of claim 3 wherein said stearic acid and/or stearic acid metallic salt film has a molecular arrangement that stearic acid and/or stearic acid metallic salt molecules are oriented substantially in a direction parallel to said substrate.
- 19. A method for forming a superlattice film comprising the steps of:
- forming an organic buffer film on a substrate with an oriented surface wherein said buffer layer is stearic acid metallic salt;
- forming a superlattice film on said organic buffer film, said superlattice film being a multi-layer comprising one or more organic neutral planar molecule layers and one or more metallic layers formed alternatively with one of said one or more organic neutral planar molecule layers formed directly on said organic buffer film.
- 20. A method for forming a superlattice film of claim 19 wherein said one or more metallic layers are comprised of a common metallic element.
- 21. A method for forming a superlattice film of claim 20 wherein said common metallic element is aluminum, indium, or gold.
- 22. A method for forming a superlattice film of claim 19 wherein said one or more organic neutral planar molecule layers are multi-layers comprising organic neutral planar monomolecular layers, respectively.
- 23. A method for forming a superlattice film of claim 22 wherein said one or more organic neutral planar molecule layers are comprised of a common molecule selected from the group consisting of TCNQ, TCNQ derivatives, TMTTF, TMTSF, TNAP, TTF, TTF derivatives, NMP, HMTTF, and DMPTTF.
- 24. A method for forming an organic superconducting film of claim 3 wherein said stearic acid metallic salt film is a (CH.sub.3 (CH.sub.2).sub.16 COO).sub.2 Ca film.
- 25. A method for forming an organic film of claim 11 wherein said organic film is selected to possess superconductivity.
- 26. A method for forming an organic film of claim 11 wherein said organic buffer film is made from stearic acid and/or stearic acid metallic salt.
- 27. A method for forming an organic film of claim 26 wherein said stearic acid and/or stearic acid metallic salt film has a molecular arrangement that stearic acid and/or stearic acid metallic salt molecules are oriented substantially in a direction perpendicular to said substrate.
- 28. A method for forming an organic film of claim 26 wherein said stearic acid and/or stearic acid metallic salt film has a molecular arrangement that stearic acid and/or stearic acid metallic salt molecules are oriented substantially in a direction parallel to said substrate.
- 29. A method for forming an organic film of claim 26 wherein said stearic acid metallic salt film is a (CH.sub.3 (CH.sub.2).sub.16 COO).sub.2 Ca film.
- 30. A method for forming an organic film comprising the steps of:
- forming an organic buffer film on a substrate with the molecules of said film oriented by Langmuir-Blodgett's technique; and
- forming a charge-transfer organic film on said buffer film by vapor deposition,
- wherein said organic buffer film has a molecular arrangement in which molecules thereof are oriented substantially in a direction parallel to said substrate.
- 31. A method for forming an organic film comprising the steps of:
- forming an organic buffer film on a substrate with the molecules of said film oriented by vapor deposition;
- forming a charge-transfer organic film on said buffer film by vapor deposition,
- wherein said organic buffer film has a molecular arrangement in which molecules thereof are oriented substantially in a direction parallel to said substrate.
Priority Claims (1)
Number |
Date |
Country |
Kind |
1-305889 |
Nov 1989 |
JPX |
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Parent Case Info
This application is a continuation of Ser. No. 07/617,196, filed Nov. 23, 1990, now abandoned.
US Referenced Citations (9)
Foreign Referenced Citations (2)
Number |
Date |
Country |
63-140576 |
Jun 1988 |
JPX |
1-209767 |
Aug 1989 |
JPX |
Non-Patent Literature Citations (2)
Entry |
Adachi et al., Appl. Phys. Lett., vol. 57, No. 6, Aug. 6, 1990, pp. 531-533. |
Sweitzer et al., "Superconductivity in Polycrystalline Pressed Samples of Organic Metals", Solid State Communications, vol. 69, No. 8, Feb. 1989, pp. 843-845. |
Continuations (1)
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Number |
Date |
Country |
Parent |
617196 |
Nov 1990 |
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