Claims
- 1. A method for simultaneously decreasing the wetting angle and increasing the surface area of an applicator surface comprising subjecting said applicator surface to an ion producing gas which, upon exposure to electrical excitation or ultraviolet radiation, releases ions which become chemically bonded to the applicator surface and form a layer having a wetting angle which is less than the wetting angle of the applicator surface and a surface area which is greater than the surface area of the applicator surface.
- 2. The method of claim 1 wherein the ion producing gas is subjected to electrical excitation.
- 3. The method of claim 2 wherein the electrical excitation is achieved by a chemical vapor deposition system in the presence of a magnetic field.
- 4. The method of claim 3 wherein the ion producing gas is a halogen, helium, nitrous oxide, nitrogen, oxygen, argon, air, fluorosilicons, C.sub.1-0 fluoroalkyls, or mixtures thereof.
- 5. The method of claim 4 wherein the layer is chemically bonded to the applicator surface and has a thickness of 50-5000 Angstroms.
- 6. The method of claim 5 wherein the layer has a wetting angle which is 5.degree.-99.degree. less than the wetting angle of the applicator surface.
- 7. The method of claim 6 wherein the surface area of the layer is 10-90% greater than the surface area of the applicator surface.
- 8. The method of claim 7 wherein the wetting angle of the applicator surface is 100.degree.-200.degree..
- 9. The method of claim 8 wherein the wetting angle of the layer is 1.degree.-99.degree..
- 10. The method of claim 9 wherein the ions are fluorine.
- 11. The method of claim 10 wherein the layer is 500 to 2000 Angstroms thick.
- 12. A method for simultaneously decreasing the wetting angle and increasing the surface area of an applicator surface comprising the steps of:
- (a) placing the applicator in a chemical vapor deposition system;
- (b) introducing an ion-producing gas into the reaction chamber; and
- (c) energizing the ion-producing gas to cause the formation of ions which react with the applicator surface;
- wherein the ions form a layer on the surface of the applicator, which layer has a wetting angle which is less than the wetting angle of the applicator surface and a surface area which is greater than the surface area of the applicator surface.
- 13. The method of claim 12 wherein the chemical vapor deposition system comprises a reaction chamber, a vacuum pump, and a gas supply source.
- 14. The method of claim 13 wherein the reaction chamber is evacuated prior to introducing the applicator.
- 15. The method of claim 14 wherein the ion producing gas is a halogen, helium, nitrous oxide, nitrogen, oxygen, argon, air, fluorosilicons, C.sub.1-10 fluoroalkyls, or mixtures thereof.
- 16. The method of claim 15 wherein the ion-producing gas is allowed to saturate the applicator prior to energizing.
- 17. The method of claim 16 wherein the ions form a 50-5000 Angstrom thick layer chemically bonded to the surface of the applicator.
- 18. The method of claim 17 wherein the wetting angle of the layer is 1.degree.-99.degree. less than the wetting angle of the applicator surface.
- 19. The method of claim 18 wherein the surface area of the layer is 10-90% greater than the surface area of the applicator surface.
- 20. The method of claim 19 wherein the ions which become chemically bonded to the applicator surface are fluorine, nitrogen, oxygen, argon, or helium.
- 21. A method for simultaneously increasing the wetting angle and increasing the surface area of an applicator surface comprising subjecting said applicator surface to an ion producing gas which, upon exposure to electrical excitation or ultraviolet radiation, releases ions which become chemically bonded to the applicator surface and form a layer having a wetting angle which is greater than the wetting angle of the applicator surface and a surface area which is greater than the surface area of the applicator surface.
- 22. The method of claim 21 wherein the ion producing gas is subjected to electrical excitation.
- 23. The method of claim 22 wherein the ion-producing gas is a fluorosilicon, a C.sub.1-10 fluoroalkyl, a halogen, nitrous oxide, nitrogen, oxygen, air, or mixtures thereof.
- 24. The method of claim 23 wherein the ion-producing gas is nitrous oxide, nitrogen, oxygen, air, or mixtures thereof, either alone or in combination with a halogen, a C.sub.1-10 fluoroalkyl or a fluorosilicone.
- 25. The method of claim 24 wherein the layer has a thickness of 50 to 5000 Angstroms.
Parent Case Info
This is a divisional of copending application Ser. No. 08/052,328 filed on Apr. 23, 1993.
US Referenced Citations (3)
Foreign Referenced Citations (3)
Number |
Date |
Country |
88402258 |
Jan 1989 |
EPX |
2023922 |
Jan 1990 |
JPX |
1107758 |
Jan 1968 |
GBX |
Divisions (1)
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Number |
Date |
Country |
Parent |
52328 |
Apr 1993 |
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