1. Field of the Invention
This invention relates to a method and technology of hybrid stacked Flip Chip for a solar cell and particularly to that of manufacturing a simple and higher efficient solar cell.
2. Description of Related Art
As shown in
A compound solar cell is formed by a compound semiconductor on a substrate to absorb medium wavelength solar spectrum. Owing to a direct bandgap, it is higher efficient and absorbs the correspondent wavelength of 25% around. As shown in
As shown in
However, each solar cells mentioned above may absorb only the correspondent long wavelength (as shown in
Thus, recently a tandem cell is provided, in which materials of different bandgaps are stacked into the cell of multiple junctions.
As shown in
As shown in
However, Si/SiGe, GaN/AlGaN, and GaAs/AlGaAs used for the semiconductors are quite different, so the semiconductor epitaxy when being formed is easily polluted alternately with each other, and lattice matching is also very different.
Consequently, because of the technical defects of described above, the applicant keeps on carving unflaggingly through wholehearted experience and research to develop the present invention, which can effectively improve the defects described above.
This invention relates to a method of hybrid stacked Flip Chip for a solar cell, comprising:
step 1 of forming a solar cell with at least one pair P-N junction semiconductor layers and making each P-N junction semiconductor layer could absorb various wavelength of solar spectrum by corresponding to different materials;
step 2 of forming another solar cell with at least one P-N junction semiconductor layers of which the series of materials are different from step 1; and
step 3 of stacking each of the P-N junction semiconductor layers described at step 1 and step 2 in the Flip-Chip technology and stacking in order the P-N junction semiconductor layers from long wavelength to short wavelength.
Thus, the Flip-Chip technology is used in this invention to stack different series solar cell for increase of the efficient of solar cell and solve the problem of lattice mismatch.
Now, the present invention will be described more specifically with reference to the following embodiments. It is to be noted that the following descriptions of preferred embodiments of this invention are presented herein for purpose of illustration and description only; it is not intended to be exhaustive or to be limited to the precise form disclosed.
This invention relates to a method of hybrid stacked Flip Chip for a solar cell and is used to stack a solar cell onto on another solar cell in the Flip-Chip technology, as shown in
step 1 of forming a solar cell with at least one pair P-N junction semiconductor layers and making each P-N junction semiconductor layer could absorb various wavelength of solar spectrum by corresponding to different materials;
step 2 of forming another solar cell with at least one P-N junction semiconductor layers of which the series of materials are different from step 1; and
step 3 of stacking each of the P-N junction semiconductor layers described at step 1 and step 2 in the Flip-Chip technology and stacking in order the P-N junction semiconductor layers from long wavelength to short wavelength.
In the following description, there are figures illustrating embodiments of this invention
Refer to
a formed P-N junction semiconductor layer 61 of Si and Ge that may absorb long wavelength, and its substrate 60 of Si, Ge, or Si/Ge;
formed P-N junction semiconductor layers 71 and 72 of As, Ga, and P that may absorb medium wavelength, and its substrate 70 of InP or GaAs, or GaP;
in the Flip-Chip technology, the P-N junction semiconductor layers 71 and 72 of As, Ga, and P that may absorb medium wavelength being stacked onto the P-N junction semiconductor layer 61 of Si and Ge that may absorb long wavelength, in which the P-N junction semiconductor layers 71 and 72 of As, Ga, and P that may absorb medium wavelength lie on the substrate 70 of InP, GaAs or GaP;
The series of materials of the P-N junction semiconductor layer 61 of Si and Ge that may absorb long wavelength and those of the P-N junction semiconductor layers 71 and 72 of As, Ga, and P that may absorb medium wavelength being different so that connection bumps 20 may be formed between the two P-N junction semiconductor layers and the two P-N junction semiconductor layers of different materials are combined together in the form of Flip Chip.
Refer to
a formed P-N junction semiconductor layers 61 of Si and Ge that may absorb long wavelength, and its substrate 60 of Si, Ge, or Si/Ge;
a formed P-N junction semiconductor layers 80 of Ga, In, Al an N that may absorb short wavelength, and its transparent substrate 81 of Al2O3 sapphire, silicon carbide, or ZnO;
in the Flip-Chip technology, the P-N junction semiconductor layers 80 of Ga, In, Al an N that may absorb short wavelength being stacked onto the P-N junction semiconductor layers 61 of Si and Ge that may absorb long wavelength, in which the transparent substrate 81 of Al2O3 sapphire, silicon carbide, or ZnO lies on the P-N junction semiconductor layers 80 of Ga, In, Al an N that may absorb short wavelength;
The series of materials of the P-N junction semiconductor layers 61 of Si and Ge that may absorb long wavelength and those of the P-N junction semiconductor layers 80 of Ga, In, Al an N that may absorb short wavelength being different so that connection bumps 20 may be formed between the two P-N junction semiconductor layers and the two P-N junction semiconductor layers of different materials are combined together in the form of Flip Chip.
Refer to
formed P-N junction semiconductor layers 71 and 72 of As, Ga, and P that may absorb medium wavelength, and its substrate 70 of InP, GaAs or GaP;
a formed P-N junction semiconductor layers 80 of Ga, In, Al an N that may absorb long wavelength, and its transparent substrate 81 of Al2O3 sapphire, silicon carbide, or ZnO;
in the Flip-Chip technology, the P-N junction semiconductor layers 80 that may absorb short wavelength being stacked onto the P-N junction semiconductor layers 71 and 72 of As, Ga, and P that may absorb medium wavelength, in which the transparent substrate 81 of Al2O3 sapphire, silicon carbide, or ZnO lies on the P-N junction semiconductor layers 80 of Ga, In, Al an N that may absorb short wavelength;
The series of materials of the P-N junction semiconductor layers 71 and 72 of As, Ga, and P that may absorb medium wavelength and those of the P-N junction semiconductor layers 80 of Ga, In, Al an N that may absorb short wavelength being different so that connection bumps 20 may be formed between the two P-N junction semiconductor layers and the two P-N junction semiconductor layers of different materials are combined together in the form of Flip Chip.
Refer to
a substrate 60 of Si, Ge, or Si/Ge on which a P-N junction semiconductor layers 61, such as Si and SiGe, that may absorb the long wavelength is stacked; an tunnel junction 10 being formed on the layer 61, and on the tunnel junction 10, a P-N junction semiconductor layers 71, such as GaAs, that may absorb the medium wavelength; an tunnel junction 10 being again formed on the layer 71, and on the tunnel junction 10, a P-N junction semiconductor layer 72, such as AlGaAs and InGaP, that may absorb the medium wavelength being stacked;
further a formed P-N junction semiconductor layers 80 of Ga, In, Al an N that may absorb long wavelength, and its transparent substrate 81 of Al2O3 sapphire, silicon carbide, or ZnO;
in the Flip-Chip technology, the P-N junction semiconductor layers 80 of Ga, In, Al an N that may absorb short wavelength being stacked onto the P-N junction semiconductor layer 72 that may absorb medium wavelength;
The series of materials of the P-N junction semiconductor layers 80 of Ga, In, Al an N that may absorb long wavelength and those of the P-N junction semiconductor layers 72 that may absorb medium wavelength being different so that connection bumps 20 may be formed between the two P-N junction semiconductor layers and the two P-N junction semiconductor layers of different materials are combined together in the form of Flip Chip.
Refer to
a formed P-N junction semiconductor layers 61 of Si and Ge, such as Si and Si/Ge, that may absorb long wavelength;
formed P-N junction semiconductor layers 71 and 72 of As, Ga, and P, such as GaAs/AlGaAs, GaAs/InGaP, GaP/GaP, GaAs/AlIn GaP, and GaAs/AlGaAs . . . etc, that may absorb medium wavelength; and
a P-N junction semiconductor layers 80, such as GaN/AlGaN, GaN/InGaN and InGaN/AlGaN, that may absorb short wavelength;
in the Flip-Chip technology, the P-N junction semiconductor layers 71 and 72 that may absorb medium wavelength and the P-N junction semiconductor layers 80 that may absorb short wavelength being stacked in order onto the P-N junction semiconductor layers 61 of Si and Ge that may absorb long wavelength;
The series of materials of the P-N junction semiconductor layers 61 of Si and Ge that may absorb long wavelength, those of the P-N junction semiconductor layers 71 and 72 of As, Ga, and P that may absorb medium wavelength, and those of the P-N junction semiconductor layers of Ga, In, Al an N that may absorb short wavelength being different so that connection bumps 20 may be formed between the P-N junction semiconductor layers and the P-N junction semiconductor layers of different materials are combined together in the form of Flip Chip.
In
While the invention has been described in terms of what is presently considered to be the most practical and preferred embodiments, it is to be understood that the invention needs not be limited to the disclosed embodiment. On the contrary, it is intended to cover various modifications and similar arrangements included within the spirit and scope of the appended claims which are to be accorded with the broadest interpretation so as to encompass all such modifications and similar structures.