This application is a Division of application Ser. No. 07/598,282, filed Oct. 16,1990, now abandoned.
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4566918 | Irvine et al. | Jan 1986 | |
4575920 | Isunashima | Mar 1986 | |
4597160 | Ipri | Jul 1986 | |
4622735 | Shibata | Nov 1986 | |
4630090 | Simmons et al. | Dec 1986 | |
4654686 | Borrello | Mar 1987 | |
4876222 | Luttmer et al. | Oct 1989 | |
4879357 | Patrick | Nov 1989 | |
4885258 | Ishihara et al. | Dec 1989 | |
4902637 | Kondou et al. | Feb 1990 | |
4914500 | Liu et al. | Apr 1990 | |
4927773 | Jack et al. | May 1990 | |
4929569 | Yaniv et al. | May 1990 | |
4952995 | Phillips et al. | Aug 1990 | |
4956686 | Borrello et al. | Sep 1990 | |
4960718 | Aina | Oct 1990 | |
4960728 | Schaake et al. | Oct 1990 | |
4984033 | Ishizu et al. | Jan 1991 | |
5192695 | Wang et al. | Mar 1993 |
Number | Date | Country |
---|---|---|
0344863 | Dec 1989 | EPX |
0212179 | Dec 1983 | JPX |
59-189685 | Oct 1984 | JPX |
3038268 | Feb 1988 | JPX |
63-301561 | Dec 1988 | JPX |
0015983 | Jan 1989 | JPX |
0055878 | Mar 1989 | JPX |
0187874 | Jul 1989 | JPX |
Entry |
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Cd5 Thin Film Field Effect Transistor; Venkateswarlu et al; vol. 22 No. 11, 1976; pp. 739-741; J. Inst. Electronics and Telecom. |
Silicon-on-Sapphire Deep Depletion Mos Transistor; Heiman; IEEE Transaction on Electronic devices; Dec. 1966, pp. 856-862. |
Electrical Properties of CdTe Metal-Semiconductor FET; Dreifus and Kolbas; 1987; pp. 2722-2724. |
Electronic Deep Levels in Laser-crystallized silicon Thin Film MOS capacitors on Fused Silica; Johnson et al; pp. 101-108; 1984; Mat. Res. Soc. Symp. Proc. vol. (33). |
Laser-recrystallized SOI devices: Promises and Pitfalls; Kamins; pp. 109-111; vol. (33); Mat. Res. Soc. Symp. Proc. |
N-Channel MISFET epitaxial HgCdTe/CdTe; William et al. Electron letters, vol. 16 No. 22; 1980; pp. 839-840. |
CdTe MEFETs; D. L. Dreifus and R. M. Kolbas; Appl. Phys. Lett 51(12) 87; pp. 931-933. |
Number | Date | Country | |
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Parent | 598282 | Oct 1990 |