Claims
- 1. A method for producing a photodetector device comprising:
- depositing a light absorbing layer on a substrate;
- forming a plurality of spaced apart openings at intervals in said light absorbing layer, the openings extending to said substrate;
- depositing an electrically insulating layer on said substrate in the openings and on and covering said light absorbing layer;
- depositing a first conductivity type semiconductor layer on the said insulating layer; and
- producing a plurality of spaced apart second conductivity type semiconductor regions in said fist conductivity type semiconductor layer respectively opposite corresponding openings in said light absorbing layer, said second conductivity type regions extending to said insulating layer, by selectively diffusing impurities into regions of said first conductivity type semiconductor layer until the impurities reach said insulating layer.
- 2. A method for producing a photodetector device comprising:
- depositing a light absorbing layer on a substrate;
- forming a plurality of spaced apart openings at intervals in said light absorbing layer, the opening extending to said substrate;
- depositing a first conductivity type semiconductor layer on said substrate in the openings and on and covering said light absorbing layer; and
- producing a plurality of spaced apart second conductivity type semiconductor regions in said first conductivity type semiconductor layer respectively opposite corresponding openings in said light absorbing layer, said second conductivity type regions extending to said substrate, by selectively diffusing impurities into regions of said first conductivity type semiconductor layer until the impurities reach said substrate.
- 3. The production method as defined in claim 1 including depositing said light absorption layer by one of MOCVD and MBE and depositing said insulating layer by one of MOCVD or MBE.
- 4. The production method as defined in claim 1 including producing said first conductivity type semiconductor layer and said second conductivity type semiconductor regions by:
- depositing a semiconductor layer on said insulating layer by one of MOCVD and MBE and adding thereto minute quantities of an impurity producing the second conductivity type;
- heating an thereby converting said second conductivity type semiconductor layer to a first conductivity type semiconductor layer; and
- producing said second conductivity type semiconductor regions by selectively diffusing second conductivity type impurities into said first conductivity type semiconductor layer.
- 5. The production method as defined in claim 2 including producing said light absorption layer by one of vapor deposition, sputtering, and CVD and depositing said first conductivity type semiconductor layer by one of LPE, MOCVD, and MBE.
- 6. The production method as defined in claim 2 including producing said first conductivity type semiconductor layer and said second conductivity type semiconductor regions by:
- depositing a semiconductor layer on said substrate and adding thereto minute quantities of an impurity producing the second conductivity type;
- heating and thereby converting said second conductivity type semiconductor layer to a first conductivity type semiconductor layer; and
- producing said second conductivity type semiconductor regions by selectively diffusing second conductivity type impurities into said first conductivity type semiconductor layer.
Priority Claims (1)
Number |
Date |
Country |
Kind |
1-58763 |
Mar 1989 |
JPX |
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Parent Case Info
This application is a division of application Ser. No. 07/458,460, field Dec. 28, 1989, now U.S. Pat. No. 5,075,748.
US Referenced Citations (7)
Foreign Referenced Citations (7)
Number |
Date |
Country |
0304335 |
Feb 1989 |
EPX |
61-152065 |
Jul 1986 |
JPX |
62-36858 |
Feb 1987 |
JPX |
62-104163 |
May 1987 |
JPX |
63-43366 |
Feb 1988 |
JPX |
63-133580 |
Jun 1988 |
JPX |
63-273365 |
Nov 1988 |
JPX |
Non-Patent Literature Citations (2)
Entry |
Baker et al., "Photovoltaic CdHgTe-Silicon Hybrid Focal Planes," SPIE, vol. 510, Infrared Technology X (1984), pp. 121-129. |
Williams et al., "Multilayers of HgTe-CdTe Grown by Low-Temperature Metal-organic Chemical Vapor Deposition", Journal of Applied Physics, vol. 62, No. 1, 1987, pp. 295-297. |
Divisions (1)
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Number |
Date |
Country |
Parent |
458460 |
Dec 1989 |
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