Claims
- 1. A method for manufacturing a semiconductor device, comprising:forming an interlayer insulation film on a semiconductor layer; forming an opening portion in the interlayer insulation film, the opening portion reaching a conductive portion underlying the interlayer insulation film; forming a first metal film on a surface of a resultant structure including the interlayer insulation film by stacking, in order, a titanium film, a titanium nitride film, a tungsten film, and a tungsten carbide film; forming a second metal film on the first metal film, the second metal film containing at least copper as a principal ingredient; and melting the second metal film and burying the melted second metal film into the opening portion.
- 2. The method according to claim 1, wherein the interlayer insulation film has a dielectric constant ranging from 1.0 to 3.9.
- 3. The method according to claim 1, further comprising flattening a surface of the interlay insulation film.
- 4. The method according to claim 1, wherein the interlayer insulation film has a thickness of about 1.5 μm, and the opening portion is a contact hold having a size of about 0.5 μm square, the contact hold being formed in the interlayer insulation film by a photoetching process.
- 5. The method according to claim 4, wherein the contact hold has an aspect ratio of 2.5 or more.
- 6. The method according to claim 1, further comprising forming the titanium film, the titanium nitride film, the tungsten film, the tungsten carbide film continuously in a vacuum by CVD.
- 7. The method according to claim 1, further comprising forming the tungsten carbide film by thermally treating a carbon-ion-implanted tungsten film and carbonizing a surface thereof.
- 8. The method according to claim 1, further comprising forming the tungsten carbide film by argon sputtering using tungsten carbide as a target.
- 9. The method according to claim 1, further comprising forming the tungsten carbide film by formation sputtering using tungsten as a target.
- 10. The method according to claim 1, further comprising forming the tungsten carbide film by carbonizing a tungsten film by plasma.
- 11. The method according to claim 1, further comprising forming a SiN film between the interlayer insulation film and the first metal film.
- 12. The method according to claim 1, further comprising forming the second metal film as a copper film formed by sputtering in a vacuum.
- 13. The method according to claim 1, further comprising instantaneously melting the second metal film by irradiation of a laser beam.
- 14. The method according to claim 1, further comprising instantaneously melting the second metal film by furnace annealing.
- 15. The method according to claim 1, further comprising instantaneously melting the second metal film by rapid thermal annealing.
- 16. The method according to claim 1, further comprising treating the first metal film and the second metal film to bury the first metal film and the second metal film only into the opening portion to form a buried wiring layer.
- 17. The method according to claim 16, further comprising forming a plurality of buried wiring layers by repeating the respective steps.
- 18. The method according to claim 1, further comprising treating the first metal film and the second metal film to project part of each of the first metal film and the second metal film from the opening portion to form a projected wiring layer.
- 19. The method according to claim 18, further comprising forming a plurality of projected wiring layers by repeating the respective steps.
- 20. A method for manufacturing a semiconductor device, comprising:forming an interlayer insulation film on a semiconductor layer; forming a contact hole in the interlayer insulation film, the contact hole reaching a conductive portion underlying the interlayer insulation film; forming a wiring groove in the interlayer insulation film, the wiring groove being formed in a region which includes the contact hole; forming a first metal film on a surface of a resultant structure including the interlayer insulation film by stacking, in order, a titanium film, a titanium nitride film, a tungsten film, and a tungsten carbide film; forming a second metal film on the first metal film, the second metal film containing at least copper as a principal ingredient; and melting the second metal film and burying the melted second metal film into the opening portion.
- 21. The method according to claim 20, wherein the interlayer insulation film has a dielectric constant ranging from 1.0 to 3.9.
- 22. The method according to claim 20, further comprising flattening a surface of the interlayer insulation film.
- 23. The method according to claim 20, wherein the interlayer insulation film has a thickness of about 1.5 μm, and the opening portion is a contact hole having a size of about 0.5 μm square, the contact hole being formed in the interlayer insulation film by a photoetching process.
- 24. The method according to claim 23, wherein the contact hole has an aspect ratio of 2.5 or more.
Priority Claims (1)
Number |
Date |
Country |
Kind |
8-276182 |
Oct 1996 |
JP |
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Parent Case Info
This is a continuation of application Ser. No. 08/950,757, filed Oct. 15, 1997, now abandoned, which is incorporated herein by reference.
US Referenced Citations (10)
Foreign Referenced Citations (4)
Number |
Date |
Country |
63-301548 |
Dec 1988 |
JP |
5-102152 |
Apr 1993 |
JP |
08-288389 |
Nov 1996 |
JP |
WO-0001006 |
Jan 2000 |
WO |
Non-Patent Literature Citations (1)
Entry |
English-language translation of Office Action dated Apr. 27, 2004, from the Japanese Patent Office in Japanese Application No. 8-276182. |
Continuations (1)
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Number |
Date |
Country |
Parent |
08/950756 |
Oct 1997 |
US |
Child |
09/799674 |
|
US |