Claims
- 1. A method for producing a non single crystal semiconductor device comprising the steps of;
- placing an amorphous silicon layer on a substrate through low pressure CVD process using disilane gas,
- effecting solid phase growth to said amorphous silicon layer to obtain an active layer by heating said substrate together with said layer at temperature in the range 500.degree. C.-650.degree. C. for 4-50 hours,
- producing an insulation layer on said solid phase growth layer by oxidizing the surface of said solid phase growth layer at a temperature in the range 900.degree. C.-1100.degree. C. in an atmosphere selected from dry atmosphere and wet atmosphere,
- implanting donor impurities into said solid phase growth layer around said insulation layer to form a source and a drain of a transistor, and
- placing a conductive layer on said insulation layer as a gate electrode,
- and further comprising depositing a capacitor, a resistor and a switching transistor on said substrate, including the steps of;
- depositing a resistor layer together with a conductive wiring layer coupled with said resistor layer, said resistor layer being provided at the same time as said conductive layer on said insulation layer as a gate electrode.
- depositing a capacitor having a dielectric layer sandwiched by a pair of conductive layers, said dielectric layer being provided at the same time as said insulation layer, and said pair of conductive layers being provided at the same time as said active layer and said conductive layer on said insulation layer as a gate electrode, and
- depositing at least one transistor of MOS structure having an active layer, a gate insulation layer, and a gate electrode, said deposition of said transistor being performed at the same time as said non single crystal semiconductor device.
- 2. A method according to claim 1, wherein growth rate of said amorphous silicon layer is in the range between 50 .ANG./minute and 500 .ANG./minute.
- 3. The method as defined by claim 1, wherein said solid phase growth of said amorphous layer is performed by heating in a nitrogen atmosphere.
- 4. A method for producing a non single crystal semiconductor device according to claim 1, further comprising the step of performing a hydrogenation on at least said silicon layer in a hydrogen atmosphere.
- 5. A method according to claim 4, wherein said hydrogenation is carried out at 400.degree. C. for about 30 minutes.
- 6. A method for producing a non single crystal semiconductor device according to claim 2, further comprising the step of performing a hydrogenation on at least said silicon layer in a hydrogen atmosphere.
- 7. A method according to claim 6, wherein said hydrogenation is carried out at about 400.degree. C. for about 30 minutes.
Priority Claims (1)
Number |
Date |
Country |
Kind |
5-260859 |
Oct 1993 |
JPX |
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COPENDING APPLICATION
This is a continuation-in-part application based upon U.S. patent application Ser. No. 08/189,498 filed Jan. 31, 1994, now U.S. Pat. No. 5,442,198, which is a divisional of U.S. patent application Ser. No. 07/825,552, filed Jan. 27, 1992 (now U.S. Pat. No. 5,298,455).
US Referenced Citations (16)
Foreign Referenced Citations (6)
Number |
Date |
Country |
0310702 |
Apr 1989 |
EPX |
0383230 |
Aug 1990 |
EPX |
0093663 |
May 1986 |
JPX |
1-61062 |
Mar 1989 |
JPX |
4-245482 |
Sep 1992 |
JPX |
4-245443 |
Sep 1992 |
JPX |
Non-Patent Literature Citations (5)
Entry |
Kurihara, "Completely Integrated Contact-Type Linear a-Si/a-SiC Heterojunction Image Sensor" published on Mar. 23, 1989, in 23'd meeting in 147'th Committee of Amorphous Material in Japan Science Promotion Association. [no translation]. |
Sze, VLSI Technology, Mc Graw-Hill, 1988, pp. 233-235. |
Scheid et al., Japanese Journal of Applied Physics, vol. 29, No. 11, Nov. 1990, Tokyo JP, pp. L2105-L2107. |
Katoh, IEEE Transactions On Electron Devices, vol. 35, No. 7, Jul. 1988, New York US pp. 923-928. |
Nakanishi et al., Extended Abstracts, vol. 90, No. 1, May 1990, Princeton, NJ US pp. 489-490. |
Divisions (1)
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Number |
Date |
Country |
Parent |
825552 |
Jan 1992 |
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Continuation in Parts (1)
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Number |
Date |
Country |
Parent |
189498 |
Jan 1994 |
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