Claims
- 1. A method for assembling a semiconductor transducer comprising the steps of:
- selectively etching one surface of a substrate to form a well therein;
- forming a channel in a first surface of a semiconductor layer;
- bonding said first surface of said semiconductor layer to said substrate about the periphery of said well, wherein the channel in the semiconductor layer is situated over the peripheral edge of said well; and
- selectively sawing edge portions of said semiconductor layer to a selected depth to form a second surface of said semiconductor layer and a pedestal projecting outwardly from said second surface of said semiconductor layer, said second surface being substantially parallel with said first surface, said pedestal being disposed above said well.
- 2. A method as set forth in claim 1 wherein said channel forming step is performed by selectively etching said first surface.
- 3. A method as set forth in claim 1 wherein said selectively etching step leaves a plurality of structures extending from the bottom surface of said well, said structures being dimensioned for limiting the deflection of said semiconductor layer into said well.
- 4. A method as set forth in claim 3 further including the steps of selectively etching recesses into said first surface of said semiconductor layer, each of said recesses being associated with one of said structures and being dimensioned to receive a portion of said structures therein, said structures having an upper surface elevantionally commensurate with the surface of said substrate.
Parent Case Info
This is a division, of application Ser. No. 617,122, filed June 4, 1984, now U.S. Pat. No. 4,680,606.
US Referenced Citations (2)
Number |
Name |
Date |
Kind |
3970982 |
Kurtz et al. |
Jul 1976 |
|
4121334 |
Wallis |
Oct 1978 |
|
Foreign Referenced Citations (1)
Number |
Date |
Country |
57-80532 |
May 1982 |
JPX |
Divisions (1)
|
Number |
Date |
Country |
Parent |
617122 |
Jun 1984 |
|