Claims
- 1. A method of producing an optical semiconductor device comprising the steps:
- growing an n-type buffer layer on an n-type substrate;
- growing an n-type clad layer, a quantum well layer, a p-type clad layer and a p-type cap layer in the mentioned order on said n-type buffer layer and etching to form a ridge;
- growing an undoped layer on said n-type buffer layer so as to be disposed on opposite sides of said ridge;
- growing an n-type layer and an n-type cap layer in the mentioned order on said undoped layer on one side of said ridge;
- growing a p-type layer and a p-type cap layer in the mentioned order on said undoped layer on the other side of said ridge;
- respectively providing first junction electrodes on said p-type cap layer at the top of said ridge and the bottom surface of said substrate, and
- respectively providing second junction electrodes on said p-type cap layer and said n-type cap layer on both sides of said ridge.
Priority Claims (1)
Number |
Date |
Country |
Kind |
4-118688 |
May 1992 |
JPX |
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Parent Case Info
This application is a divisional of application Ser. No. 08/055,384, filed May 3, 1993, now abandoned.
US Referenced Citations (5)
Foreign Referenced Citations (2)
Number |
Date |
Country |
77486 |
May 1985 |
JPX |
387086 |
Apr 1991 |
JPX |
Non-Patent Literature Citations (2)
Entry |
Yamanishi et al. "Quantum Mechanical Size Effect Modulation Light Sources--A New Field Effect Semiconductor Laser or Light Emitting Device," Japanese J. Appl. Phys. vol. 22, No. 1, Jan. 1983 pp. L22-L24. |
T. Sasaki, et al "Semiconductor Photonic Integrated Circuit for High-Density MDM Light Sources", Preliminary Report 4-149 for 1990 Autumn Meeting by the Association of Electronic Data Communication. |
Divisions (1)
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Number |
Date |
Country |
Parent |
55384 |
May 1993 |
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