Claims
- 1. A method for producing a device having a charge accumulating element provided with upper and lower electrodes, a first semiconductor layer and an insulating layer and a transistor electrically connected with said charge accumulating element provided with a gate electrode, a gate insulating layer and a second semiconductor layer, said charge accumulating element and said transistor being formed on an insulating surface of a common substrate, comprising the steps of:
- forming said lower electrode and said gate electrode on said insulating surface;
- forming said insulating layer and said gate insulating layer on said lower electrode and said gate electrode in a same first deposition process step so that said insulating layers are constituted of a common layer;
- forming said first and second semiconductor layers on said insulating layers in a same second deposition process step, said semiconductor layers being a thin film; and
- forming source and drain electrodes and said upper electrode.
- 2. A method according to claim 1, wherein said first and second semiconductor layers are formed by a glow discharge decomposition of silane.
- 3. A method according to claim 1, wherein said first and second semiconductor layers comprise amorphous silicon.
- 4. A method according to claim 1, wherein before forming said upper electrode and said source and drain electrodes, a semiconductor layer doped with an impurity is formed.
Priority Claims (6)
Number |
Date |
Country |
Kind |
61-11981 |
Jan 1986 |
JPX |
|
61-11982 |
Jan 1986 |
JPX |
|
61-33777 |
Feb 1986 |
JPX |
|
61-131099 |
Jun 1986 |
JPX |
|
61-144990 |
Jun 1986 |
JPX |
|
61-153281 |
Jun 1986 |
JPX |
|
Parent Case Info
This application is a division of application Ser. No. 07/496,402, filed Mar. 20, 1990, now abandoned, which is a division of application Ser. No. 07/412,586, filed Sep. 25, 1989, issued as U.S. Pat. No. 4,931,661, on Jun. 5, 1990, which is a continuation of application Ser. No. 07/246,962, filed Sep. 21, 1988, now abandoned, which is a continuation of application Ser. No. 07/005,886, filed Jan. 22, 1987, now abandoned.
US Referenced Citations (5)
Foreign Referenced Citations (2)
Number |
Date |
Country |
59-129461 |
Jul 1984 |
JPX |
63-124533 |
May 1988 |
JPX |
Divisions (2)
|
Number |
Date |
Country |
Parent |
496402 |
Mar 1990 |
|
Parent |
412586 |
Sep 1989 |
|
Continuations (2)
|
Number |
Date |
Country |
Parent |
246962 |
Sep 1988 |
|
Parent |
5886 |
Jan 1987 |
|