Claims
- 1. A method of fabricating a semiconductor device, the semiconductor device having a static-type memory cell including a pair of driver transistors and a pair of load elements, the method comprising the steps of:forming a gate insulating film on a main surface of a semiconductor substrate; forming a first conductive film on said gate insulating film constituting a gate electrode of said driver transistors; forming a first insulating film on said first conductive film; forming an opening successively through said first insulating film, said first conductive film and said gate insulating film to expose said semiconductor substrate; forming a second conductive film on said first insulating film and in said opening constituting said load elements; and forming a same planar pattern that includes said opening in order of said second conductive film, said first insulating film and said first conductive film.
- 2. The method of fabricating a semiconductor device according to claim 1, further comprising the step of implanting an impurity simultaneously into a source drain region of said driver transistor on said main surface and said second conductive film on the semiconductor substrate.
- 3. The method of fabricating a semiconductor device according to claim 1, wherein said planar pattern is formed so as to arrange that said pair of transistors themselves and said pair of load elements themselves are parallel.
Priority Claims (1)
Number |
Date |
Country |
Kind |
9-30975 |
Feb 1997 |
JP |
|
Parent Case Info
This application is a division of Ser. No. 08/905,048, file Aug. 1, 1997, now abandoned.
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Foreign Referenced Citations (8)
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Entry |
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