Claims
- 1. A method of producing a semiconductor laser comprising the steps of forming at least a first conduction type clad layer, an active layer and a second conduction type clad layer on a first conduction type semiconductor substrate in this order, selectively forming insulating film in a striped pattern on the second conduction type clad layer, forming an inverted mesa-shaped ridge by etching a part of the second conduction type clad layer using the insulating film as a mask and forming a first conduction type current stopping layer on each side of the ridge, wherein the improvement comprising
- the step of curving each side of the inverted mesa-shaped ridge into a concave surface in a plane perpendicular to the longitudinal direction of the ridge.
- 2. A method of producing a semiconductor laser as defined in claim 1 in which a semiconductor substrate of the group III to V element compounds is employed as the first conduction type semiconductor substrate.
- 3. A method of producing a semiconductor laser as defined in claim 1 or 2 in which the first conduction type current stopping layer is formed of semi-insulating semiconductor.
- 4. A method of producing a semiconductor laser as defined in claim 1 in which the second conduction type clad layer is formed of a semiconductor compound selected from a group consisting of InGaP, AlGaInP and GaP, and the second conduction type clad layer is etched with a mixture of hydrochloric acid and at least one kind of acid other than hydrochloric acid.
- 5. A method of producing a semiconductor laser as defined in claim 4 in which the acid other than hydrochloric acid is acetic acid.
- 6. A method of producing a semiconductor laser as defined in claim 4 in which the acid other than hydrochloric acid is phosphoric acid.
Priority Claims (1)
Number |
Date |
Country |
Kind |
8-53134 |
Mar 1996 |
JPX |
|
Parent Case Info
This is a divisional of application Ser. No. 08/815,083 filed Mar. 11, 1997.
US Referenced Citations (1)
Number |
Name |
Date |
Kind |
4496403 |
Turley |
Jan 1985 |
|
Divisions (1)
|
Number |
Date |
Country |
Parent |
815083 |
Mar 1997 |
|