Number | Date | Country | Kind |
---|---|---|---|
4-112714 | May 1992 | JPX | |
4-160263 | May 1992 | JPX | |
4-160264 | May 1992 | JPX | |
4-160265 | May 1992 | JPX | |
4-162306 | May 1992 | JPX |
This application is a divisional of application Ser. No. 08/051,765, filed Apr. 26, 1993, abandoned.
Number | Name | Date | Kind |
---|---|---|---|
5019525 | Virkus et al. | May 1991 | |
5061645 | nakazato et al. | Oct 1991 | |
5100810 | Yoshimi et al. | May 1992 | |
5128271 | Bronner et al. | Jul 1992 | |
5204275 | Lane | Apr 1993 | |
5298786 | Shahidi et al. | Mar 1994 | |
5352624 | Miwa et al. | Oct 1994 | |
5374568 | Huang et al. | Dec 1994 | |
5424575 | Washio et al. | Jun 1995 |
Number | Date | Country |
---|---|---|
4348037 | Dec 1992 | JPX |
Entry |
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M. Hashimoto, A. Ogasaware, M. Shimanoe, A. Nieda, H. Satoh, A. Yagi and T. Matsushita; Low Leakage SOIMOSFETs Fabricated Using a Wafer Bonding Method; Extended Abstracts of the 21st Conf. on Solid State Devices and Materials, lTokyo, 1989, pp. 89-92. |
G. G. Shahidi, D. D. Tang, B. Davari, Y. Taur, P. McFarland, K. Jenkins, D. Danner, Mr. Rodriquez, A. Megdanis, E. Petrilio, and T. H. Ning; A Novel High-Performance Lateral Bipolar on SOI; IBM Research, T. J. Watson Research Center, Yorktown Heights, NY 10598 pp. 26.1.1-26.1.4 (Date Unknown). |
A Thin-Base Laterial Bipolar Transistor Fabricated on Bonded SOI; Fujitsu Laboratories Ltd.; 1991; pp. 5-216-5-217. |
Number | Date | Country | |
---|---|---|---|
Parent | 51765 | Apr 1993 |