Claims
- 1. A method of manufacturing a semiconductor device having a capacitor, comprising the steps of:
- forming a first electrode layer on a semiconductor substrate,
- forming an oxynitride film on said first electrode layer,
- forming a nitride film on said oxynitride film,
- forming an oxide film on said nitride film by thermal oxidation,
- placing said semiconductor substrate under an inert gas atmosphere after the formation of said oxide film, and
- forming a second electrode layer on said oxide film after placing said semiconductor substrate under an inert gas atmosphere, wherein said oxide film has a thickness of less than 20 .ANG., further comprising lowering the temperature of said inert gas atmosphere, after placing the semiconductor substrate under an inert gas atmosphere, to a temperature sufficient to suppress growth of said oxide film.
- 2. A method of manufacturing a semiconductor device having a capacitor, which method comprises:
- forming a first electrode layer on a semiconductor substrate;
- forming a silicon oxynitride film having a thickness in the range of 17 .ANG. to 25 .ANG. on said first electrode layer;
- forming a silicon nitride film having a thickness in the range of 20 .ANG. to 50 .ANG. on said oxynitride film;
- forming a silicon oxide film having a thickness in the range of 5 .ANG. to less than 20 .ANG. on said nitride film; and
- forming a second electrode layer on said oxide film.
- 3. A method of manufacturing a semiconductor device having a capacitor, which method comprises:
- forming a first electrode layer on a semiconductor substrate;
- forming a dielectric layer having an overall thickness in the range of 42 .ANG. to less than 95 .ANG. on said first electrode layer by:
- forming a silicon oxynitride film on said first electrode layer;
- forming a silicon nitride film having a thickness in the range of 20 .ANG. to 50 .ANG. on said oxynitride film; and
- forming a silicon oxide film having a thickness less than 20 .ANG. on said nitride film; and
- forming a second electrode layer formed on said dielectric layer.
Priority Claims (1)
Number |
Date |
Country |
Kind |
2-268810 |
Oct 1990 |
JPX |
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Parent Case Info
This application is a division of application Ser. No. 07/767,327 filed Sep. 30, 1991 abandoned.
US Referenced Citations (7)
Foreign Referenced Citations (3)
Number |
Date |
Country |
0 376 685 |
Jul 1990 |
EPX |
63-316465 |
Dec 1988 |
JPX |
2-16763 |
Jan 1990 |
JPX |
Non-Patent Literature Citations (2)
Entry |
"Enhanced Reliabilityof Native Oxide Free Capacitor Dielectrics on Rapid Thermal Nitrided Polysilicon", Ajika et al., 1991 Symposium on VLSI Technology Digest of Technical Papers, pp. 63-64. |
Wolf et al. Silicon Processing for the VLSI Era vol. 1, Process Technology, p. 517, 1986, Lattice Press. |
Divisions (1)
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Number |
Date |
Country |
Parent |
767327 |
Sep 1991 |
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