Claims
- 1. A method of manufacturing a solid state image sensing device, comprising the steps of:
- providing a semiconductor substrate which is formed by a predetermined process;
- forming a photosensitive pixel area and a charge transfer area on the surface of said semiconductor substrate;
- forming an insulating film on the surface of said semiconductor substrate, including over said photosensitive pixel area and charge transfer area;
- forming a transfer electrode on said insulating film above said charge transfer area;
- forming a first insulating layer on said semiconductor substrate over said transfer electrode and said photosensitive pixel area, with a predetermined thickness, said thickness being sufficient to prevent crystal defects and contamination diffusion from a high melting temperature metal silicide layer;
- forming said high melting temperature metal silicide layer as a first light shielding layer on said transfer electrode, said metal silicide layer being positioned above said charge transfer area; and
- forming a second insulating layer on said high melting temperature metal silicide layer.
- 2. A method of manufacturing a solid state image sensing device according to claim 1, wherein said high melting temperature metal silicide layer is composed of molybdenum silicide.
- 3. A method of manufacturing a solid state image sensing device according to claim 2, further comprising the step of adding phosphorus into said first insulating layer.
- 4. A method of manufacturing a solid state image sensing device according to claim 1 further comprising the step of adding phosphorus into said first insulating layer.
- 5. A method of manufacturing a solid state image sensing device according to claim 1, further comprising the step of forming a getter layer between said first insulating layer and said high melting temperature metal silicide layer.
- 6. A method of manufacturing a solid state image sensing device according to claim 1, further comprising the step of forming a second light shielding layer on said second insulating layer in the manner that an area over said high melting temperature metal silicide layer as the first shielding layer is covered.
Priority Claims (1)
Number |
Date |
Country |
Kind |
62-221279 |
Sep 1987 |
JPX |
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Parent Case Info
This application is a division of application Ser. No. 07/239,610, filed Sep. 1, 1988, now U.S. Pat. No. 5,028,972.
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Mar 1980 |
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Tasch, Jr. et al. |
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4228445 |
Tasch, Jr. et al. |
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4251571 |
Garbarino et al. |
Feb 1981 |
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4397077 |
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Aug 1983 |
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Foreign Referenced Citations (2)
Number |
Date |
Country |
57-24171 |
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JPX |
61-87353 |
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JPX |
Divisions (1)
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Number |
Date |
Country |
Parent |
239610 |
Sep 1988 |
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