Claims
- 1. A method of manufacturing a thin film battery in a chamber comprising a magnetron cathode, the method comprising:
(a) providing a target on the magnetron cathode in the chamber; (b) placing a substrate comprising mica facing the target in a chamber; (c) introducing a process gas into the chamber; (d) energizing the process gas to form a plasma to sputter the target to deposit target material on the substrate; (e) delivering an ion flux from the plasma to the substrate of from about 0.1 to about 5 mA/cm2 to enhance crystallization of the target material deposited the substrate; and (f) exhausting the process gas from the chamber.
- 2. A method according to claim 1 wherein (a) comprises providing a target comprising LiCoO2 in the chamber.
- 3. A method according to claim 1 comprising applying a current at a power density level of from about 0.1 to about 20 W/cm2 to the target while maintaining the substrate at a potential of from about −5 to about −200 V.
- 4. A method according to claim 1 wherein the substrate comprises mica having a thickness of less than about 100 microns.
- 5. A method according to claim 4 further comprising forming films on the mica substrate, the films comprising a first and second current collectors, a cathode, and an electrolyte, such that the deposited material serves as the anode.
- 6. A method of manufacturing a thin film battery in a chamber comprising a magnetron cathode, the method comprising:
(a) providing a target comprising lithium metal oxide on the magnetron cathode in the chamber; (b) placing a substrate facing the target in a chamber; (c) introducing a process gas into the chamber; (d) energizing the process gas to form a plasma to sputter the target to deposit lithium metal oxide on the substrate; (e) delivering an ion flux from the plasma to the substrate of from about 0.1 to about 5 mA/cm2 to form a crystalline lithium metal oxide film on the substrate; and (f) exhausting the process gas from the chamber.
- 7. A method according to claim 6 wherein the target comprises LiCoxOy.
- 8. A method according to claim 6 wherein the target comprises LiCoO2.
- 9. A method according to claim 6 wherein the target comprises LiMn2O2.
- 10. A method according to claim 6 comprising operating the magnetron cathode at a power density level of from about 0.1 to about 20 W/cm2 and maintaining the substrate at a potential of from about −5 to about −200 V.
- 11. A method according to claim 6 further comprising applying a non-uniform magnetic field about the target in the chamber comprising a weaker central magnetic field strength and a surrounding stronger peripheral magnetic field strength.
- 12. A method according to claim 6 comprising introducing a process gas comprising argon and oxygen and maintaining the process gas in the chamber at a pressure of from about 5 to about 25 mTorr.
- 13. A method according to claim 6 comprising annealing the deposited material by heating the substrate to a temperature from about 150 to about 600° C.
- 14. A method according to claim 6 comprising the initial step of forming a substrate comprising mica, and forming one or more films on the substrate to generate or store an electrical charge.
- 15. A method according to claim 14 wherein the mica substrate comprises a thickness of less than about 100 microns.
- 16. A method according to claim 14 further comprising forming films on the mica substrate, the films comprising a first and second current collectors, an anode, and an electrolyte, such that the deposited crystalline lithium metal oxide film serves as the cathode.
- 17. A method according to claim 6 further comprising cleaning the substrate before depositing material on the substrate.
- 18. A method according to claim 17 comprising cleaning the substrate by heating the substrate to about 400° C. in air.
- 19. A method of manufacturing a thin film battery in a chamber comprising a magnetron cathode, the method comprising:
(a) providing a target comprising LiCoxOy on the magnetron cathode in the chamber; (b) placing a substrate facing the target in a chamber; (c) introducing a process gas into the chamber; (d) energizing the process gas to form a plasma to sputter the target to deposit LiCoxOy on the substrate; (e) delivering an ion flux from the plasma to the substrate of from about 0.1 to about 5 mA/cm2 to form a crystalline LiCoxOy film on the substrate; and (f) exhausting the process gas from the chamber.
- 20. A method according to claim 19 wherein the target comprises LiCoO2.
- 21. A method according to claim 19 comprising operating the magnetron cathode at a power density level of from about 0.1 to about 20 W/cm2 and maintaining the substrate at a potential of from about −5 to about −200 V.
- 22. A method according to claim 19 further comprising applying a nonuniform magnetic field about the target in the chamber comprising a weaker central magnetic field strength and a surrounding stronger peripheral magnetic field strength.
- 23. A method according to claim 19 comprising introducing a process gas comprising argon and oxygen and maintaining the process gas in the chamber at a pressure of from about 5 to about 25 mTorr.
- 24. A method according to claim 19 comprising annealing the deposited material by heating the substrate to a temperature from about 150 to about 600° C.
- 25. A method according to claim 19 comprising the initial step of forming a substrate comprising mica, and forming one or more films on the substrate to generate or store an electrical charge.
- 26. A method according to claim 25 wherein the mica substrate comprises a thickness of less than about 100 microns.
- 27. A method according to claim 25 further comprising forming films on the mica substrate, the films comprising a first and second current collectors, an anode, and an electrolyte, such that the deposited crystalline LiCoO2 film serves as the cathode.
- 28. A method according to claim 19 further comprising cleaning the substrate before depositing material on the substrate.
- 29. A method according to claim 28 comprising cleaning the substrate by heating the substrate to about 400° C. in air.
CROSS-REFERENCE
[0001] This application is a divisional of U.S. patent application Ser. No. 09/656,012, filed Sep. 7, 2000, which is incorporated herein by reference in its entirety.
Divisions (1)
|
Number |
Date |
Country |
Parent |
09656012 |
Sep 2000 |
US |
Child |
10639206 |
Aug 2003 |
US |