(a) Field of the Invention
The present invention is related to manufacture an aluminum oxide (Al2O3) substrate, and more particularly related to a method of manufacturing an Al2O3 substrate by using an aluminum planking directly.
(b) Description of the Prior Art:
Oxide artificial lattice has very important applications in modem technological products. For example, aluminum oxide is a highly suitable substrate material for gallium nitride, which makes its growth technology particularly important. The key technology for growing aluminum oxide substrate is the melting of aluminum oxide powder in 2000° C. environment to have it sintered into crystalline structure. Sintering is a critical process, in which, the control of oven temperature determines the quality of sapphire crystal. The instability of the oven temperature tends to result in poor crystal quality.
Known processes for high-temperature sintering of aluminum oxide substrate are both expensive and time consuming, which often result in poor crystalline structure due to unstable control of temperature. As aluminum oxide is used extensively in the packaging structure of light-emitting diode as LED substrate, the availability of low-cost or simple process for forming aluminum oxide substrate with certain thickness presents a pressing problem.
To address the drawbacks of prior art, the inventor, based on many years of research, development and practical experiences, proposes a method of manufacturing Al2O3 substrate as basis for implementing the improvement of prior art.
Briefly, it is a primary object of the present invention to provide a method of manufacturing Al2O3 substrate by using a simple chemical process to form Al2O3 on aluminum planking.
A method of manufacturing Al2O3 substrate in accordance with present invention comprises the following steps of:
Providing an aluminum planking;
Proceeding a chemical reaction on the surface of the aluminum planking to form an aluminum oxide layer on it ; and
Separating the aluminum oxide layer from the aluminum planking.
Preferably, the step of separating the aluminum oxide layer from the aluminum layer can comprise physical destruction means and chemical corrosion means.
The subject matter regarded as the invention is particularly pointed out and distinctly claimed in the concluding portion of the specification. The invention with features and advantages thereof may best be understood by reference to the following detailed description with the accompanying drawings in which:
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Step 10: Providing an aluminum planking, preferably, the aluminum planking can be an aluminum board or an aluminum foil.
Step 11: Proceeding a chemical reaction on the surface of the aluminum planking to form an aluminum oxide layer on it;
The aluminum is a strong reductant, so the surface of the aluminum planking will be oxidized rapidly and form an oxide film about fifty angstroms in thickness in the normal temperature environment with dry air. Because of this aluminum oxide film, the aluminum planking can resist the water corrosion from advanced oxidation.
The chemical reaction can be performed by a mercury-aluminum amalgam process. The aluminum can react with water to generate the aluminum oxide while mercury salt and mercury oxide exist. In the other embodiment, the aluminum can be oxidized directly in the air to generate the aluminum oxide while mercury exists.
2Al+6H2O→Al2O3+3H2+3H2O
4Al+3O2→2Al2O3
In another embodiment, the aluminum oxide can be generated by reacting the ferric oxide by a redox process. However, this process must be performed in a high temperature environment and is applied in smelting frequently.
2Al(s)+Fe2O3(s)→2Fe(s)+Al2O3(s)ΔH=−849 Kj
Step. 12: Separating the aluminum oxide layer from the aluminum planking. This step can be realized by at least three separation means which are described in the following.
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The aluminum is an amphiprotic metal which can react with both diluted acid and strong base, so the aluminum can be dissolved in strong base solution easily to generate aluminate and hydrogen gas, and the aluminum also can be dissolved in diluted acid solution easily to generate a corresponding aluminate and hydrogen gas. The following chemical formulas can be applied in the present invention.
2Al+2OH−+6H2O→2Al(OH)4−+3H2
2Al+6H3O+→2Al(H2O)63+3H2
However, if the purity of the aluminum is higher, the reacting rate with acid becomes slower. The pure aluminum with purity beyond 99.95% can only be dissolved in aqua regia. Besides, the surface of aluminum will be passivated when the aluminum is soaked in cold concentrated sulfuric acid or concentrated nitric acid. Hence, the preferred solution for corroding aluminum is a strong base such as sodium hydrogen (NaOH) solution or potassium hydrogen (KOH) solution and so on.
Besides, the preferred solution for corroding aluminum also can be an etchant of copper chloride which is composed of copper chloride and hydrogen acid. When the aluminum planking is soaked in this solution, the displacement reaction occurs between the copper ion in the etchant of copper chloride and aluminum, and the copper ion would be transformed into copper powder and elemental aluminum would be transformed into aluminum ion, so the aluminum portion can be removed from the aluminum planking.
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It is to be noted that the preferred embodiments disclosed in the specification and the accompanying drawings are not limiting the present invention; and that any construction, installation, or characteristics that is same or similar to that of the present invention should fall within the scope of the purposes and claims of the present invention.
Number | Date | Country | Kind |
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096121377 | Jun 2007 | TW | national |