Claims
- 1. A method of manufacturing a silicon nitride object by the isostatic pressing of a body preformed of silicon nitride powder with a gaseous pressure medium while sintering said body, said method comprising:
- placing said silicon nitride body and an embedding material therefor in an open top vessel which is resistant to the sintering temperature, said embedding material being in direct contact with said body and consisting of glass containing B.sub.2 O.sub.3 or a material which forms glass containing B.sub.2 O.sub.3 upon heating;
- transforming said embedding material in the vessel into a B.sub.2 O.sub.3 containing glass melt having a substantially horizonal upper surface limited by the walls of the vessel, said body being located beneath said surface, said melt presenting a casing that is impermeable to the gaseous pressure medium applied during said isostatic pressing, said transforming being accomplished prior to said isostatic pressing; and thereafter
- isostatically pressing and sintering said body while applying said gaseous pressure medium directly to said upper surface of said melt.
- 2. A method as set forth in claim 1 wherein said embedding material consists originally of particles or pieces.
- 3. A method as set forth in claim 1 wherein said transforming step is accomplished while the body and the embedding material are subjected to a vacuum.
- 4. A method as set forth in claim 1 wherein said transforming step is accomplished while the body and the embedding material are in contact with a gas at a pressure which is at least as great as the pressure of the gas present in the pores of the powder body at the prevailing temperature.
- 5. A method as set forth in claim 1 wherein the melt has a viscosity of at the most 10.sup.6 poises during said isostatic pressing.
- 6. A method as set forth in claim 1 wherein the B.sub.2 O.sub.3 content in the glass amounts to 2 to 70 percent by weight.
- 7. A method as set forth in claim 1 wherein the glass of the melt has a coefficient of thermal expansion of 3.0 to 3.8 times 10.sup.-6 per degree C. within the temperature range 20 to 500 degrees C.
CROSS REFERENCE TO RELATED APPLICATION:
This is a continuation of copending application Ser. No. 102,336 filed Dec. 11, 1979.
US Referenced Citations (7)
Continuations (1)
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Number |
Date |
Country |
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102336 |
Dec 1979 |
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