The present application claims priority from the Japanese Application JP2016-058856 filed on Mar. 23, 2016. The Japanese Application JP2016-058856 is incorporated by reference into this application.
1. Field of the Invention
One or more embodiments of the present invention relates to a method of manufacturing an organic EL display device.
2. Description of the Related Art
For example, as disclosed in JP 2015-176717 A, in an organic EL element structure, a method of sealing a laminated structure in which a first electrode, an organic EL layer and a second electrode are included in this order is adopted in order to protect an organic EL layer from moisture or the like.
An example of the sealing method to be used includes a method of combining an inorganic material film with an organic material layer, from the viewpoint of coatability of foreign substances which are present on an organic EL element structure. However, the coating of foreign substances may be not sufficient in the end of a sealing region. In a case where the coating of foreign substances is not sufficient, there is a concern of, for example, the infiltration of moisture to an organic EL layer being caused.
One or more embodiments of the present invention is contrived in view of such circumstances, and an object thereof is to realize a method of manufacturing an organic EL display device which is excellent in the coatability of foreign substances in the end of a sealing region.
According to one aspect of the present invention, a method of manufacturing an organic EL display device is provided. The method includes, in the following order, disposing a mask material so as to specify a region having a sealing layer formed therein, on a substrate in which a laminated structure having a first electrode, an organic EL layer, and a second electrode included in this order is disposed, applying a sealing layer forming material onto the substrate, and removing the mask material from an upper portion of the substrate.
In one embodiment of the present invention, an end surface of the sealing layer to be formed includes a taper region.
In one embodiment of the present invention, the sealing layer forming material includes a curable resin composition, and the method includes removing the mask material, and then curing the sealing layer forming material.
In one embodiment of the present invention, the sealing layer forming material is applied using an ink jet method.
In one embodiment of the present invention, the method includes applying the sealing layer forming material to form a sealing layer, and then forming an inorganic sealing film on the sealing layer.
Hereinafter, each embodiment of the present invention will be described with reference the accompanying drawings. The disclosure is merely illustrative, and appropriate changes without departing from the spirit of the invention which can be readily conceived by those skilled in the art are naturally contained in the scope of the present invention. In addition, in order to make the description clearer, the drawings may be schematically shown for the width, thickness, shape and the like of each unit as compared to the embodiment, but are merely illustrative, and are not intended to limit the interpretation of the present invention. In addition, in the present specification and each drawing, the same components as those described in the previous drawings are denoted by the same reference numerals and signs, and thus the detailed description thereof may not be given.
An organic EL display device 10 controls each pixel formed in a display region 11 on a substrate 100 by a data drive circuit 12 and a scanning drive circuit 13 and displays an image. Here, for example, the data drive circuit 12 is an integrated circuit (IC) that generates and transmits a data signal to be sent to each pixel, and the scanning drive circuit 13 is an IC that generates and transmits a gate signal to a thin film transistor (TFT) included in a pixel. In
A scanning line 14 for transmitting a signal from the scanning drive circuit 13 is connected to the gate electrode of a switching transistor 30 as shown in
As shown in
The first scanning line G1 is connected to the gate electrode of the switching transistor 30, and the switching transistor 30 is set to be in an on-state when a signal is applied from the scanning drive circuit 13. Consequently, when a signal is applied from the data drive circuit 12 to the first data line D1, electric charge is stored in a storage capacitor 40, a voltage is applied to the gate electrode of the driver transistor 20, and the driver transistor 20 is set to be in an on-state. Here, even when the switching transistor 30 is set to be in an off-state, the driver transistor 20 is set to be in an on-state for a certain period of time due to the electric charge stored in the storage capacitor 40. Since the anode of the organic light-emitting diode 60 is connected to the potential wiring 16 through between the source and drain of the driver transistor 20, and the cathode of the organic light-emitting diode 60 is fixed to a reference potential Vc, a current flows to the organic light-emitting diode 60 in accordance with the gate voltage of the driver transistor 20, and the organic light-emitting diode 60 emits light. In addition, an additional capacitor 50 is formed between the anode and the cathode of the organic light-emitting diode 60. The additional capacitor 50 exhibits an effect of stabilizing a voltage to be written in the storage capacitor 40, and contributes to the stable operation of the organic light-emitting diode 60. Specifically, the effect is exhibited by the capacitance of the additional capacitor 50 becoming larger than the capacitance of the storage capacitor 40.
As shown in
As shown in
The metal layer 403 and a cathode electrode 409 described later are electrically connected to each other, and thus the metal layer 403 is used as an auxiliary wiring of the power supply wiring of the cathode electrode 409. In addition, a capacitor layer (additional capacitor 50) is formed by the metal layer 403 and the anode electrode 405 with the insulating layer 404 interposed therebetween. Electrical connection between the metal layer 403 and the cathode electrode 409 is performed, for example, by providing a through-hole outside of a display region. The insulating layer 404 is formed of, for example, SiNx. The anode electrode 405 can be formed of any appropriate material. For example, an Al-based material, or a transparent conductive material such as an indium tin oxide (ITO) or an indium zinc oxide (IZO) is used.
In addition, as shown in
In addition, an RIB layer 407 for separating a pixel is formed on the above structure, and an organic EL layer 408 is formed on the RIB layer 407 and the anode electrode 405. Here, a region in which the anode electrode 405 and the organic EL layer 408 are in contact with each other serves as a light-emitting region, and the RIB layer 407 specifies the outer edge of the light-emitting region.
The cathode electrode 409 is formed on the organic EL layer 408. The cathode electrode 409 is formed of, for example, a transparent conductive material such as an ITO or an IZO. The cathode electrode 409 may be formed across some of the pixels PX, or all of the pixels PX arranged in a matrix. The organic EL layer 408 is formed by, for example, laminating a hole transport layer, a light-emitting layer, and an electron transport layer in order from the anode electrode 405 side, but is well-known, and thus the detailed description thereof will not be given.
A first sealing film 410 is provided on the cathode electrode 409, and a second sealing film 412 is provided on the first sealing film 410 through the intermediation of a sealing layer (planarization layer) 411 including an organic material interposed therebetween.
Hereinafter, a method of manufacturing an organic EL display device in one embodiment of the present invention will be described with reference to
As shown in
In the shown example, a dam 200 surrounding a display region is formed on the substrate 100. The first sealing film 410 is formed so as to cover even the dam 200 continuously from the organic EL element structure end 420. The dam 200 is formed of, for example, a resin material in a line shape so as to have a predetermined width and height.
Next, as shown in
Next, as shown in
The sealing layer forming material typically includes a curable resin composition. As a method of applying the sealing layer forming material, any appropriate method can be adopted. For example, an ink jet method is used. In a case where the ink jet method is adopted, the viscosity of the sealing layer forming material is set to be low, for example, in order to stably eject the material from nozzles.
Thereafter, as shown in
Next, as shown in
The present invention can be variously modified without being limited to the aforementioned embodiment. For example, it is possible to make a replacement with a configuration capable of achieving substantially the same configuration as the configuration shown in the embodiment, a configuration exhibiting the same operational effect or the same object.
While there have been described what are at present considered to be certain embodiments of the invention, it will be understood that various modifications may be made thereto, and it is intended that the appended claims cover all such modifications as fall within the true spirit and scope of the invention.
Number | Date | Country | Kind |
---|---|---|---|
2016-058856 | Mar 2016 | JP | national |