Claims
- 1. A method of manufacturing a body of silicon nitride having improved strength at elevated temperatures and substantially the same strength in all directions which comprises first enclosing a quantity of silicon nitride material in the form of a powder or a product preformed from such powder in a gas-tight casing comprising glass that is yelding at the temperatures used for sintering silicon nitride, and only thereafter heating said casing with the silicon nitride material encased thereby to a temperature of at least 1600.degree. C. and subjecting the casing and thereby the silicon nitride material to isostatic pressing at a pressure of at least 100 MPa using a gaseous pressure medium to form said silicon nitride body within said casing.
- 2. A method as set forth in claim 1 wherein said isostatic pressing is conducted at a pressure of 150 to 1500 MPa.
- 3. A method as set forth in claim 2 wherein said isostatic pressing is conducted at a pressure of 200 to 300 MPa.
- 4. A method as set forth in claim 1 wherein said temperature is in the range of from 1600 to 1900.degree. C.
- 5. A method as set forth in claim 4 wherein said temperature is in the range of from 1700 to 1800.degree. C.
- 6. A method as set forth in claim 1 wherein the casing is evacuated prior to said isostatic pressing.
- 7. A method as set forth in claim 6 wherein said silicon nitride material is in the form of a predetermined shape created by the isostatic molding of a silicon nitride powder at a pressure of at least 100 MPa and at a temperature less than the temperature at which said powder will become sintered.
- 8. A method as set forth in claim 1 wherein said casing is formed of a glass having a high softening temperature.
- 9. A method as set forth in claim 8 wherein after said isostatic pressing said casing and its contents are cooled at a rate no greater than 1000.degree. C. per hour.
- 10. A method as set forth in claim 9 wherein during said cooling the casing is subjected to a pressure of not greater than 10 MPa.
- 11. A method as set forth in claim 1 wherein said silicon nitride material contains no more than 0.6% by weight of impurities in the form of foreign metal oxides.
- 12. A method as set forth in claim 1 wherein said silicon nitride material is a silicon nitride powder which initially has a grain size of less than 100 .mu. m and a crystal size of less than 5 .mu. m.
Priority Claims (2)
Number |
Date |
Country |
Kind |
7414102 |
Nov 1974 |
SEX |
|
7507699 |
Jul 1975 |
SEX |
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CROSS-REFERENCE TO RELATED APPLICATION
This is a continuation of co-pending application Ser. No. 9,470 filed Feb. 1, 1979, (now abandoned) which is a continuation of application Ser. No. 831,929 filed Sept. 9, 1977 (now abandoned), which in turn is a continuation of application Ser. No. 627,688 filed Oct. 31, 1975 (now abandoned).
US Referenced Citations (4)
Continuations (3)
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Number |
Date |
Country |
Parent |
9470 |
Feb 1979 |
|
Parent |
831929 |
Sep 1977 |
|
Parent |
627688 |
Oct 1975 |
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