Claims
- 1. A method of manufacturing an electron source comprising a substrate, wires, and a plurality of electron-emitting elements disposed on said substrate, the electron-emitting elements being connected together by said wires, each electron-emitting element comprising a pair of electrodes and a conductive film having an electron-emitting section disposed between and connected to said pair of electrodes, said method comprising the steps of:forming a plurality of conductive films, from which respective electron-emitting sections are formed, on said substrate by applying a solution containing a metal to a plurality of locations on said substrate and by heating the solution, so as to provide respective conductive films having respective electrical resistances; and reducing the electrical resistances of said respective conductive films by chemically reducing the whole of each respective conductive film, wherein said reducing step includes a process of heating said conductive films at a temperature in a range from 20° C. to 400° C., controlled by a temperature controller, and the process of heating is performed by heating said substrate on which said conductive films are formed.
- 2. A method of manufacturing an electron source according to claim 1, wherein the step of heating the conductive films in said reducing step is performed within an atmosphere containing a hydrogen gas.
- 3. A method of manufacturing an electron source according to claim 1, wherein the step of heating the conductive films in said reducing step is performed within an atmosphere containing a gaseous mixture of hydrogen and nitrogen.
- 4. A method of manufacturing an electron source comprising a substrate, a plurality of X-directional wires, a plurality of Y-directional wires, and a plurality of electron-emitting elements disposed on said substrate and connected together in a matrix configuration by said plurality of X-directional wires and said plurality of Y-directional wires, each electron-emitting element comprising a pair of electrodes and a conductive film having an electron-emitting section disposed between and connected to said pair of electrodes, said method comprising the steps of:forming a plurality of conductive films, from which respective electron-emitting sections are formed, on said substrate by applying a solution containing a metal to a plurality of locations on said substrate and by heating the solution so as to form respective conductive films having respective electrical resistances; and reducing the electrical resistances of said respective conductive films by chemically reducing the whole of each conductive film, wherein said reducing step includes a process of heating said conductive films at a temperature in a range from 20° C. to 400° C., controlled by a temperature controller, and the process of heating is performed by heating said substrate on which said conductive films are formed.
- 5. A method of manufacturing an electron source according to claim 4, wherein the step of heating of the conductive films in said reducing step is performed within an atmosphere containing a hydrogen gas.
- 6. A method of manufacturing an electron source according to claim 4, wherein the step of heating the conductive films in said reducing step is performed within an atmosphere containing a gaseous mixture of hydrogen and nitrogen.
- 7. A method of manufacturing an electron source comprising a substrate, wires, and a plurality of electron-emitting elements disposed on said substrate and connected together by said wires, each electron-emitting element comprising a pair of electrodes and a conductive film having an electron-emitting section disposed between and connected to said pair of electrodes, said method comprising the steps of:forming a plurality of conductive films, from which respective electron-emitting sections are formed, on said substrate, by applying a solution containing a metal to a plurality of locations on said substrate and heating the solution so as to form respective conductive films having respective electrical resistances; energizing said respective conductive films; and reducing the electrical resistances of said respective conductive films by chemically reducing the whole of each conductive film, wherein said reducing step includes a process of heating said plurality of conductive films within an atmosphere at a temperature in a range from 20° C. to 400° C., controlled by a temperature controller, and the process of heating is performed by heating said substrate on which said conductive films are formed.
- 8. A method of manufacturing an electron source according to claim 7, wherein the step of heating said plurality of conductive films in said reducing step is performed within an atmosphere containing a hydrogen gas.
- 9. A method of manufacturing an electron source according to claim 7, wherein the step of heating said plurality of conductive films in said reducing step is performed within an atmosphere containing a gaseous mixture of hydrogen and nitrogen.
- 10. A method of manufacturing an electron source comprising a substrate, a plurality of X-directional wires, a plurality of Y-directional wires, and a plurality of electron-emitting elements disposed on said substrate and connected together in matrix configuration by said plurality of X-directional wires and said plurality of Y-directional wires, each electron-emitting element comprising a pair of electrodes and a conductive film having an electron-emitting section disposed between and connected to said pair of electrodes, said method comprising the steps of:forming a plurality of conductive films, from which respective electron-emitting sections are formed, on said substrate by applying a solution containing a metal to a plurality of locations on said substrate and by heating the solution so as to form respective conductive films having respective electrical resistances; energizing said respective conductive films; and reducing the electrical resistance of said respective conductive films by chemically reducing the whole of each conductive film, wherein said reducing step includes a process of heating said plurality of conductive films at a temperature in a range from 20° C. to 400° C., controlled by a temperature controller, and the process of heating is performed by heating said substrate on which said conductive films are formed.
- 11. A method of manufacturing an electron source according to claim 10, wherein the step of heating said plurality of conductive films in said reducing step is performed within an atmosphere containing a hydrogen gas.
- 12. A method of manufacturing an electron source according to claim 10, wherein the step of heating said plurality of conductive films in said reducing step is performed within an atmosphere containing a gaseous mixture of hydrogen and nitrogen.
- 13. A method of manufacturing an image forming apparatus comprising an electron source and an image forming member for forming an image when irradiated by electrons emitted from said electron source, wherein said electron source is produced by a method according to any one of claims 1, 2-6, and 7-12.
Priority Claims (1)
Number |
Date |
Country |
Kind |
6-167986 |
Jul 1994 |
JP |
|
Parent Case Info
This application is a division of application Ser. No. 08/281,518 filed Jul. 28, 1994, now U.S. Pat. No. 5,674,100.
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