Claims
- 1. A light converter fabricated with an LED and an amorphous-silicon pin heterojunction diode comprising:
- an LED structure formed on one side of a substrate as a light-emitting unit for said light converter;
- a buffer layer formed on the other side of said substrate; and
- a positive type/intrinsic type/negative type (pin) amorphous structure formed on said buffer layer as a light-absorbing unit for said light converter, wherein said LED is made of a compound material selected from one of II-VI groups and III-V groups.
- 2. A light converter fabricated with an LED and an amorphous-silicon pin heterojunction diode comprising:
- an LED structure formed on one side of a substrate as a light-emitting unit for said light converter;
- a buffer layer formed on the other side of said substrate;
- a positive type/intrinsic type/negative type (pin) amorphous structure formed on said buffer layer as a light-absorbing unit for said light converter; and
- said buffer layer including an Au/Ge layer formed on the other side of said substrate; and
- an indium-tin-oxide layer attached on said Au/Ge layer.
- 3. A light converter fabricated with an LED and an amorphous-silicon pin heterojunction diode comprising:
- an LED structure formed on one side of a substrate as a light-emitting unit for said light converter;
- a buffer layer formed on the other side of said substrate;
- a positive type/intrinsic type/negative type (pin) amorphous structure formed on said buffer layer as a light-absorbing unit for said light converter; and said LED is a red light emitting GaAsP LED having a structure of n-GaAs.sub.1-x P.sub.x (X=0.fwdarw.0.4)/n-GaAs.sub.1-x P.sub.x (X=0.4)/p-GaAs.sub.1-x P.sub.x where X stands for an atomic proportion, X=0.fwdarw.0.4 means an atomic proportion ranging from 0 to 0.4, X=0.4 means said atomic proportion is 0.4 and said amorphous pin heterojunction diode has a structure of positive type amorphous SiC:HY/intrinsic type amorphous Si:H/negative type amorphous Si:H (p-a-SiC:H/i-a-Si:H/n-aSi:H) where said substrate is an n-GaAs substrate.
Parent Case Info
This is a Division of application Ser. No. 08/452,313; filed May 26, 1995, now U.S. Pat. No. 5,604,136.
US Referenced Citations (5)
Divisions (1)
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Number |
Date |
Country |
Parent |
452313 |
May 1995 |
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