Method of manufacturing nitride semiconductor light emitting device

Abstract

An object is to provide a method of manufacturing a nitride semiconductor light emitting device having high light emission output and allowing decrease in forward voltage (Vf). The invention is directed to a method of manufacturing a nitride semiconductor light emitting device including at least an n-type nitride semiconductor, a p-type nitride semiconductor and an active layer formed between the n-type nitride semiconductor and the p-type nitride semiconductor, wherein the n-type nitride semiconductor includes at least an n-type contact layer and an n-side GaN layer, the n-side GaN layer consists of a single or a plurality of undoped and/or n-type layers, and the method includes the step of forming the n-side GaN layer by organic metal vapor deposition with the growth temperature set within the range of 500 to 1000° C., such that the n-side GaN layer is formed between the n-type contact layer and the active layer.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 shows an exemplary structure of the nitride semiconductor light emitting device in accordance with the present invention.

FIGS. 2 to 4 show other exemplary structures of the nitride semiconductor light emitting device in accordance with the present invention.

FIG. 5 illustrates a common nitride semiconductor light emitting device.

FIG. 6 shows a structure of a nitride semiconductor light emitting device formed as Comparative Example 2.

Claims

1. A method of manufacturing a nitride semiconductor light emitting device including at least an n-type nitride semiconductor, a p-type nitride semiconductor and an active layer formed between said n-type nitride semiconductor and said p-type nitride semiconductor; wherein said n-type nitride semiconductor includes at least an n-type contact layer and an n-side GaN layer; andsaid n-side GaN layer consists of a single or a plurality of undoped and/or n-type layers; said method comprising the step offorming said n-side GaN layer by organic metal vapor deposition with growth temperature set within a range of 500 to 1000° C., such that said n-side GaN layer is formed between said n-type contact layer and said active layer.

2. The method of manufacturing a nitride semiconductor light emitting device according to claim 1, wherein said n-side GaN layer is formed of said n-type layer containing an n-type impurity at a concentration of at least 1×1018/cm3.

3. The method of manufacturing a nitride semiconductor light emitting device according to claim 1, wherein said n-side GaN layer and said active layer are formed to be in contact with each other, and said n-type contact layer contains an n-type impurity at a concentration of at least 1×1018/cm3.

4. The method of manufacturing a nitride semiconductor light emitting device according to claim 3, wherein said n-side GaN layer is formed of said n-type layer containing an n-type impurity at a concentration of at least 1×1018/cm3.

5. The method of manufacturing a nitride semiconductor light emitting device according to claim 1, wherein said n-type nitride semiconductor is formed of an undoped or n-type GaN layer.

6. The method of manufacturing a nitride semiconductor light emitting device according to claim 5, wherein said n-side GaN layer is formed of said n-type layer containing an n-type impurity at a concentration of at least 1×1018/cm3.

7. The method of manufacturing a nitride semiconductor light emitting device according to claim 5, wherein said n-side GaN layer and said active layer are formed to be in contact with each other, and said n-type contact layer contains an n-type impurity at a concentration of at least 1×1018/cm3.

8. The method of manufacturing a nitride semiconductor light emitting device according to claim 7, wherein said n-side GaN layer is formed of said n-type layer containing an n-type impurity at a concentration of at least 1×1018/cm3.

9. The method of manufacturing a nitride semiconductor light emitting device according to claim 1, wherein growth rate of said n-side GaN layer is at most 2 μm/h.

10. The method of manufacturing a nitride semiconductor light emitting device according to claim 9, wherein said n-side GaN layer is formed of said n-type layer containing an n-type impurity at a concentration of at least 1×1018/cm3.

11. The method of manufacturing a nitride semiconductor light emitting device according to claim 9, wherein said n-side GaN layer and said active layer are formed to be in contact with each other, and said n-type contact layer contains an n-type impurity at a concentration of at least 1×1018/cm3.

12. The method of manufacturing a nitride semiconductor light emitting device according to claim 11, wherein said n-side GaN layer is formed of said n-type layer containing an n-type impurity at a concentration of at least 1×1018/cm3.

13. The method of manufacturing a nitride semiconductor light emitting device according to claim 9, wherein said n-type nitride semiconductor is formed of an undoped or n-type GaN layer.

14. The method of manufacturing a nitride semiconductor light emitting device according to claim 13, wherein said n-side GaN layer is formed of said n-type layer containing an n-type impurity at a concentration of at least 1×1018/cm3.

15. The method of manufacturing a nitride semiconductor light emitting device according to claim 13, wherein said n-side GaN layer and said active layer are formed to be in contact with each other, and said n-type contact layer contains an n-type impurity at a concentration of at least 1×1018/cm3.

16. The method of manufacturing a nitride semiconductor light emitting device according to claim 15, wherein said n-side GaN layer is formed of said n-type layer containing an n-type impurity at a concentration of at least 1×1018/cm3.