1. Field of the Invention
The present invention relates to a method of manufacturing an optical waveguide device.
2. Description of the Background Art
Japanese Patent Application Publication No. 2000-121859 discloses a method of manufacturing an embedded type optical waveguide device. This method involves manufacturing an optical waveguide device by (1) depositing an undercladding layer over a quartz substrate, (2) forming a mask over the undercladding layer, (3) forming a groove for accommodating a core by the use of the mask, (4) depositing a core layer over the undercladding layer, (5) forming a core by leaving the core layer inside the groove and removing with chemical-mechanical polishing the other portions of the core layer on the undercladding layer, and (6) forming an overcladding layer over the core and the undercladding layer.
Japanese Patent Application Publication No. 2003-161852 discloses a method of manufacturing a dielectric waveguide device. This method involves manufacturing an optical waveguide device by (1′, 2′) forming a mask over a glass substrate having a refractive index of 1.445, (3′) forming a groove on the substrate using the RIE method by etching portions of the substrate that are exposed from the mask, (4′) forming a glass film that has a refractive index of 1.456 and will serve as a core, using an ICP-CVD apparatus, in the groove and over the mask, (5′) removing the mask by wet etching, and (6′) depositing a glass layer that will serve as an overcladding.
With the methods disclosed in Japanese Patent Application Publication Nos. 2000-121859 and 2003-161852, a groove for accommodating a core is formed by etching. The sides and bottom of the groove are not perfectly flat, and have sub-micron bumps and pits. Since light that propagates through the optical waveguide device propagates while permeating the sides and the bottom of the groove, the bumps and pits on the sides and bottom of the groove scatter the light that propagates through the optical waveguide device. Accordingly, the scattering loss of the optical waveguide device increases.
It is an object of the present invention to provide a method of manufacturing an optical waveguide device having low scattering loss.
The method of manufacturing an optical waveguide device that is provided as one aspect of the present invention comprises, in the following order, the steps of forming a groove by etching on a cladding member that has a glass region including a first dopant, the first dopant lowering the softening temperature of the glass region; heat treating the cladding member at a first temperature that is higher than the lowered softening temperature of the glass region; forming a core within the groove; and forming an overcladding layer over the core and the cladding member, the overcladding layer being made of a glass including a second dopant.
The method of manufacturing an optical waveguide device that is provided as another aspect of the present invention comprises the steps of forming a groove by etching on a cladding member that has a glass region including one of germanium element, phosphorus element, and boron element; heat treating the cladding member after the formation of the groove; forming a core within the groove; and forming an overcladding layer over the core and the cladding member.
Advantages of the present invention will become apparent from the following detailed description, which illustrates the best mode contemplated to carry out the invention. The invention is capable of other and different embodiments, the details of which are capable of modifications in various obvious respects, all without departing from the invention. Accordingly, the accompanying drawings and description are illustrative, not restrictive, in nature.
The present invention is illustrated by way of example, and not by way of limitation, in the figures of the accompanying drawings, in which reference numerals refer to similar elements.
In an exemplifying example, the cladding member 21 is prepared as follows. A silicon oxide glass film doped with germanium is deposited as the undercladding layer 25 by the plasma CVD method over a quartz glass substrate. The thickness of the undercladding layer 25 is 28 μm. Oxygen, tetraethoxysilane (TEOS), and tetramethoxygermanium (TMOGe) is used as the raw material gas. The relative refractive index difference Δ1 of the undercladding layer 25 (refractive index n1) with respect to the substrate 23 (refractive index n0) (Δ1=(n12−n02)/2n12) is 0.3%. Tetramethoxysilane (TMOS) may be used instead of TEOS, and tetramethylgermanium (TMGe) instead of TMOGe, as the raw material gas.
In an exemplifying example, a germanium-doped silicon oxide core film 31 that will become the core of the optical waveguide device is deposited by plasma CVD over the undercladding layer 25b and the grooves 27a and 27b. The raw material gas can be oxygen and TMOS. In order to fill the grooves 27a and 27b with the core film, the thickness of the core film 31 is preferably at least about 1.5 times the depth of the grooves. The depth of the grooves 27a and 27b is 6 μm, and the film thickness on top of the substrate is 9 μm. The relative refractive index difference Δ2 of the core film 31 (refractive index n2) with respect to the substrate 23 (Δ1=(n22−n02)/2n22) is 0.75%. In a preferred embodiment, the relative refractive index difference of the core film 31 is at least 0.3% greater than the relative refractive index difference of the undercladding layer 25b.
In an exemplifying example, first, the resist film 33 is dry etched with oxygen gas to expose the surface of the core film 31. Then, the etching gas is switched to a mixed gas of C2F6 and oxygen, and the resist film 33 and the core film 31 are etched. The etching rate of the resist film 33 and the etching rate of the core film 31 can be kept the same by adjusting the mix ratio of the etching gas. For instance, the flux ratio of oxygen and C2F6 can be set at 100:14.
Heat treatment is performed after the formation of the core 37. This heat treatment reduces the size of the bumps and pits on the top of the core, and also eliminates any impurities that might remain in the core. In an exemplifying example, the core 37 and the undercladding layer 25b are heat treated in an oxygen atmosphere for approximately 10 hours at 1000 degrees centigrade.
In an exemplifying example, the overcladding layer 39, which is a silicon oxide glass film doped with germanium, is deposited by plasma CVD over the core 37 and the undercladding layer 25b. The thickness of the overcladding layer 39 is 28 μm. The raw material gas can be oxygen, TEOS, and TMOGe. The relative refractive index difference Δ3 of the overcladding layer 39 (refractive index n1) with respect to the quartz glass substrate (Δ3=(n32−n02)/2n32) is 0.3%, for example. TMOS may be used instead of TEOS, and TMGe may be used instead of TMOGe as the raw material gas.
After the formation of the overcladding layer 39, the overcladding layer is heat treated at a second temperature that is the same or higher than the softening temperature of the overcladding layer. This heat treatment 41 reduces the size of the bumps and pits at the interface between the core and the cladding, and also eliminates any impurities that might remain in the second cladding. In an exemplifying example, the core 37 and the cladding layers 25b and 39 are heat treated in an oxygen atmosphere for approximately 10 hours at 1000 degrees centigrade.
The overcladding layer 39 preferably includes a dopant which is one of germanium element, phosphorus element, and boron element. This reduces the roughness of the interface between the overcladding layer 39 and the core 37.
The waveguide loss of an optical waveguide device formed as above is 0.05 dB/cm.
As described above, with the method of the present invention for manufacturing an optical waveguide device, the glass region of the cladding member includes a first dopant, which is, for instance, one of germanium element, phosphorus element, and boron element, and lowers the softening temperature. Therefore, the roughness of the sides and bottom of the grooves provided in the undercladding layer can be reduced. As a result, an optical waveguide device with reduced scattering loss is provided.
Germanium element, phosphorus element, and boron element are favorable as the first dopant and second dopant. If these elements are used, the heat treatment temperature can be 1100 degrees centigrade or lower without having to add an excessive amount. Therefore, there is no crystallization or phase separation of the dopants in the cladding layers during heat treatment. As the dopant included in the overcladding and the glass region of the cladding member, one selected from among fluorine element, aluminum element, and sodium element as well as germanium element, phosphorus element, and boron element can be used. One of fluorine element, aluminum element, and sodium element is also capable of reducing the roughness of the sides and bottom of the grooves provided in the cladding member.
While this invention has been described in connection with what is presently considered to be the most practical and preferred embodiments, the invention is not limited to the disclosed embodiments, but on the contrary, is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the appended claims.
The entire disclosure of Japanese Patent Application No. 2004-092408 filed on Mar. 26, 2004 including specification, claims, drawings, and summary are incorporated herein by reference in its entirety.
Number | Date | Country | Kind |
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2004-092408 | Mar 2004 | JP | national |