Claims
- 1. A method of manufacturing a photovoltaic element characterized by forming a first electrically conductive type semiconductor layer on a long substrate, forming a non-crystalline i type semiconductor layer thereon, forming a microcrystalline i type semiconductor layer thereon by the high frequency plasma CVD method, and forming a microcrystalline second electrically conductive type semiconductor layer thereon by the high frequency plasma CVD method.
- 2. A method according to claim 1, characterized in that SiH4 and H2 are used as raw material gas for the formation of said microcrystalline i type semiconductor layer, the amount of supply of said H2 to said SiH4 is 50 times or greater, and the magnitude of high frequency electric power applied to said raw material gas is 0.2 W/cm2 or greater.
- 3. A method according to claim 1, characterized in that SiH4, H2 and BF3 are used as raw material gas for the formation of said microcrystalline second electrically conductive type semiconductor layer, the amount of supply of said H2 to said SiH4 is 50 times or greater, the amount of supply of said BF3 to said SiH4 is 10 to 50%, and the magnitude of high frequency electric power applied to said raw material gas is 0.01 to 0.03 W/cm2.
- 4. A method according to claim 1, characterized in that the formation temperature of said microcrystalline i type semiconductor layer is below the formation temperature of said non-crystalline i type semiconductor layer, and the formation temperature of said microcrystalline i type semiconductor layer is 180 to 240° C.
- 5. A method according to claim 1, characterized in that said non-crystalline i type semiconductor layer is formed by the microwave plasma CVD method.
- 6. A method according to claim 1, characterized in that said non-crystalline i type semiconductor layer has an i type layer formed by the microwave plasma CVD method, and an i type layer formed by the high frequency plasma CVD method.
Priority Claims (1)
Number |
Date |
Country |
Kind |
8-255535 |
Sep 1996 |
JP |
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Parent Case Info
This application is a divisional of application Ser. No. 08/923,259, filed Sep. 4, 1997, now U.S. Pat. No. 6,162,988.
US Referenced Citations (14)
Foreign Referenced Citations (1)
Number |
Date |
Country |
62-209871 |
Sep 1987 |
JP |
Non-Patent Literature Citations (2)
Entry |
Patent Abstracts of Japan, vol. 013, No. 099 (E-724), Mar. 8, 1989 (corresponds to JP 63-274184). |
Patent Abstracts of Japan, vol. 013, No. 051 (E-712), Feb. 6, 1989 (corresponds to JP 63-244889). |