Claims
- 1. A method of manufacturing a silicon steel sheet having grains precisely arranged in a Goss orientation, comprising the steps of:
- (a) providing a steel material containing 0.01 wt % or less of C, 2.5 to 7.0 wt % of Si, 0.01 wt. % or less of S, 0.01 wt % or less of Al and 0.01 wt. % or less of N;
- (b) subjecting the steel material from step (a) which is maintained at a temperature of 1000.degree. C. or higher to hot rolling such that the temperature of the resultant rolled material at the end of the hot rolling is 700.degree. to 950.degree. C.;
- (c) subjecting the steel material from step (b) to a primary cold rolling process at a rolling reduction of 40% or more;
- (d) annealing the steel material from step (c) at a temperature of 600.degree. to 900.degree. C.;
- (e) subjecting the steel material from step (d) to a secondary cold rolling process at a rolling reduction of 50 to 80%;
- (f) annealing the steel material from step (e) at a temperature of 600.degree. to 900.degree. C.; and
- (g) subjecting the steel material from step (f) to a secondary annealing process in a reducing atmosphere, or in a non-oxidizing atmosphere having an oxygen partial pressure of 0.5 Pa or less, or in a vacuum having an oxygen partial pressure of 0.5 Pa or less, at a temperature of 1000.degree. to 1300.degree. C.
- 2. The method according to claim 1, wherein said steel sheet contains 0.01 wt % or less of Cu.
- 3. The method according to claim 1, further comprising the steps of:
- subjecting the steel material annealed in the secondary annealing process (g), to a tertiary cold rolling process at a rolling reduction of 30% or higher; and thereafter
- subjecting the steel material to a tertiary annealing in a reducing atmosphere, or in a non-oxidizing atmosphere having an oxygen partial pressure of 0.5 Pa or less, or in a vacuum having an oxygen partial pressure of 0.5 Pa or less, at a temperature in the range of 1000.degree. to 1300.degree. C.
- 4. The method according to claim 1, wherein said Al is in no more than 0.005 wt. %.
- 5. The method according to claim 4, wherein said Cu is no more than 0.005 wt. %.
- 6. The method according to claim 5, wherein Sn is no more than 0.01 wt %, V is no more than 0.01 wt. %, Zn is no more than 0.01 wt. % and 0 is no more than 0.008 wt. %.
- 7. The method according to claim 6, wherein Sn is no more than 0.005 wt. %, V is nor more than 0.005 wt. % and Zn is no more than 0.005 wt. %.
- 8. The method according to claim 7, wherein the annealing in steps (d) and (f) are carried out at a temperature of 680.degree. to 800.degree. C. for least 2 minutes.
- 9. The method according to claim 8, wherein in step (h), the annealing is carried out for at least 3 minutes.
- 10. The method according to claim 1, wherein during step (g), crystal grains are grown by surface energy and thus Goss grains are grown.
- 11. The method acording to claim 1 wherein the steel material contains 0.005 wt. % C, 3.02 wt. % Si, 0.01 wt. % Mn, 0.004 wt. % P, 0.002 wt. % S, 0.004 wt. % Al, 0.0015 wt. % N, less than 0.01 wt. % Cu, less than 0.01 wt. % Mo and 0.0017 wt. % O; carrying out the primary cold rolling at a rolling reduction of 39 to 78%; carrying out annealing in step (d) at 700.degree. C. for 1 hour in the presence of an atmosphere of 100% nitrogen; carrying out step (e) at a rolling reduction of 50 to 80%; and carrying out the annealing in step (g) in an atmosphere of 100% hydrogen.
Priority Claims (6)
Number |
Date |
Country |
Kind |
3-210363 |
Jul 1991 |
JPX |
|
3-210364 |
Jul 1991 |
JPX |
|
3-210365 |
Jul 1991 |
JPX |
|
4-185374 |
Jul 1992 |
JPX |
|
4-185375 |
Jul 1992 |
JPX |
|
4-185376 |
Jul 1992 |
JPX |
|
Parent Case Info
This is a division of application Ser. No. 07/920,127 filed Jul. 24, 1992.
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Non-Patent Literature Citations (1)
Entry |
Patent Abstracts of Japan, vol. 14, No. 232 (C-719) (4175), May 17, 1990; & JP-A-257635 (Babcock Hitachi) Feb. 27, 1990. |
Divisions (1)
|
Number |
Date |
Country |
Parent |
920127 |
Jul 1992 |
|