METHOD OF MANUFACTURING STRUCTURE AND METHOD OF MANUFACTURING CAPACITOR

Abstract

In general, according to one embodiment, there is provided a method of manufacturing a structure. The method includes forming a recess in a semiconductor substrate; oxidizing at least a bottom inner surface of the recess; and providing at least the bottom inner surface of the recess with a liquid capable of dissolving an oxide of a semiconductor substrate material.

Description

Claims

1. A method of manufacturing a structure, comprising: forming a recess in a semiconductor substrate;oxidizing at least a bottom inner surface of the recess; andproviding at least the bottom inner surface of the recess with a liquid that is capable of dissolving an oxide of a semiconductor substrate material.

2. The method of manufacturing a structure according to claim 1, wherein the formation of the recess in the semiconductor substrate is performed by etching with use of a catalyst that comprises a noble metal.

3. The method of manufacturing a structure according to claim 2, wherein the etching with use of the catalyst that comprises the noble metal is metal-assisted chemical etching.

4. The method of manufacturing a structure according to claim 1, wherein the oxidation is thermal oxidation, anodic oxidation, or photo-oxidation.

5. The method of manufacturing a structure according to claim 1, wherein the semiconductor substrate is a Si substrate, and the oxide of the semiconductor substrate material is a Si oxide.

6. The method of manufacturing a structure according to claim 1, wherein the liquid that is capable of dissolving the oxide of the semiconductor substrate material comprises hydrogen fluoride.

7. A method of manufacturing a structure, comprising: forming a recess in a semiconductor substrate;providing at least a bottom inner surface of the recess with an impurity-containing oxide;heating the semiconductor substrate in a presence of oxygen gas; andprovidingat least the bottom inner surface of the recess with a liquid that is capable of dissolving an oxide of a semiconductor substrate material.

8. The method of manufacturing a structure according to claim 7, wherein the formation of a recess in the semiconductor substrate is performed by etching with use of a catalyst that comprises a noble metal.

9. The method of manufacturing a structure according to claim 8, wherein the etching with use of the catalyst that comprises the noble metal is metal-assisted chemical etching.

10. The method of manufacturing a structure according to claim 7, wherein the impurity-containing oxide is formed by chemical vapor deposition, low pressure chemical vapor deposition, or ion implantation.

11. The method of manufacturing a structure according to claim 7, wherein the impurity-containing oxide comprises as an impurity at least one of a P-type impurity or an N-type impurity.

12. The method of manufacturing a structure according to claim 7, wherein the semiconductor substrate is a Si substrate, and the oxide of the semiconductor substrate material is a Si oxide.

13. The method of manufacturing a structure according to claim 7, wherein the liquid that is capable of dissolving the oxide of the semiconductor substrate material comprises hydrogen fluoride.

14. A method of manufacturing a capacitor, comprising: manufacturing a structure comprising a semiconductor substrate comprising a recess, by the method according to claim 7; andforming a conductive layer or a dielectric layer in the recess of the semiconductor substrate.