Claims
- 1. A method for polishing a including at least one metal layer comprising:(a) admixing an abrasive, urea, ammonium persulfate, succinic acid and deionized water to give a chemical mechanical polishing slurry precursor; (b) admixing hydrogen peroxide with the chemical mechanical polishing precursor of step (a) to give a chemical mechanical polishing slurry; (c) applying the chemical mechanical polishing slurry to the substrate; and (d) removing at least one portion of the metal layer by bringing a pad into contact with the substrate and moving the pad in relation to the substrate.
- 2. The method for polishing a substrate in claim 1 wherein hydrogen peroxide is admixed with the chemical mechanical polishing slurry precursor in ranging of from about 0.75 moles of urea to 1.0 mole of hydrogen peroxide to about 2 moles of urea to about 1.0 moles of hydrogen peroxide.
- 3. The method of claim 1 wherein the substrate includes a titanium adhesion layer and an aluminum alloy containing layer and wherein at least a portion of the titanium layer and at least a portion of the aluminum alloy containing layer are removed in step (c).
- 4. The method of claim 1 wherein the substrate further includes a titanium nitride layer wherein at least a portion of the titanium nitride layer is removed in step (c).
- 5. The method of claim 1 wherein the chemical mechanical polishing slurry is applied to the pad before the pad is placed into contact with the substrate.
- 6. The method of claim 1 wherein the abrasive is selected from the group consisting of precipitated alumina, fumed alumina, precipitated silica, fumed silica, precipitated titania, fumed titania and mixtures thereof.
- 7. The method of claim 1 wherein the chemical mechanical polishing slurry has a pH of from about 2.0 to about 8.0.
Parent Case Info
This patent application is a divisional of prior U.S. patent application Ser. No. 08/890,778, Jul. 11, 1997 now U.S. Pat. No. 6,039,891 which is a continuation-in-part of U.S. patent application Ser. No. 08/800,562, Feb. 18, 1997 now U.S. Pat. No. 6,033,596 which is a continuation-in-part of U.S. patent application Ser. No. 08/718,937, Sep. 24, 1996 now U.S. Pat. No. 5,783,937 all of which are incorporated in their entirety by reference.
US Referenced Citations (32)
Foreign Referenced Citations (5)
Number |
Date |
Country |
2847267 C2 |
May 1980 |
DE |
2847267 |
May 1980 |
DE |
59-196385 |
Nov 1984 |
JP |
63-229262 |
Sep 1988 |
JP |
WO 9616436 |
May 1996 |
WO |
Continuation in Parts (2)
|
Number |
Date |
Country |
Parent |
08/800562 |
Feb 1997 |
US |
Child |
08/890778 |
|
US |
Parent |
08/718937 |
Sep 1996 |
US |
Child |
08/800562 |
|
US |