Claims
- 1. The method of preparing an electrode having a coating adhered to a metal substrate surface of an impure metal that has enhanced adhesion for said coating on said surface, which method consists essentially of:
- subjecting said metal substrate surface to air, vacuum or inert gas elevated temperature annealing at a temperature within the range from at least about 500.degree. C. to about 800.degree. C. for a time from about 15 minutes to four hours to provide intergranular impurities in said metal, including intergranular impurities at said surface of said metal;
- cooling the resulting annealed surface;
- etching intergranularly said surface at an elevated temperature and with a strong acid or strong caustic etchant to an average roughened surface of at least about 250 microinches and an average surface peaks per inch of at least about 40, both as measured by profilometer with said peaks per inch being basis a lower profilometer threshold limit of 300 microinches and an upper profilometer threshold limit of 400 microinches;
- while maintaining said surface at least substantially free from deleterious effects of mechanical surface treatment; and
- coating said surface following intergranular etching.
- 2. The method of claim 1, wherein said cooling includes quenching.
- 3. The method of claim 1, wherein said annealing provides an at least substantially continuous intergranular network of impurities.
- 4. The method of claim 3, wherein said etching attacks an at least substantially continuous intergranular network of diffuse impurities.
- 5. The method of recoating a coated metal electrode, which method consists essentially of:
- subjecting a coated metal electrode surface to a melt containing basic material for removing said coating;
- separating said metal surface from said melt, cooling same and removing melt residue therefrom;
- subjecting said surface to air, vacuum or inert gas elevated temperature annealing at a temperature within the range from at least about 500.degree. C. to 800.degree. C. for a time from about 15 minutes to four hours, to provide intergranular surface impurities for said metal;
- cooling the resulting annealed surface;
- etching intergranularly said surface at an elevated temperature and with a strong acid or strong caustic etchant to an average roughened surface of at least about 250 microinches and an average surface peaks per inch of at least about 40, both as measured by profilometer with said peaks per inch being basis a lower profilometer threshold limit of 300 microinches and an upper profilometer threshold limit of 400 microinches;
- while maintaining said surface at least substantially free from deleterious effects of mechanical surface treatment; and
- coating said surface following intergranular etching.
- 6. The method of claim 5, wherein said annealing provides an at least substantially continuous intergranular network of impurities.
- 7. The method of claim 6, wherein said etching attacks said at least substantially continuous, intergranular network of impurities.
CROSS-REFERENCE TO RELATED APPLICATION
This is a divisional of application Ser. No. 08/132,975, filed Oct. 7, 1993, now U.S. Pat. No. 5,366,598, which is a continuation of U.S. patent application Ser. No. 07/686,963, filed Apr. 18, 1991, now U.S. Pat. No. 5,262,040, which in turn is a continuation-in-part of U.S. patent application Ser. No. 374,429, filed Jun. 30, 1989, now abandoned.
US Referenced Citations (19)
Non-Patent Literature Citations (2)
Entry |
Titanium Electrode for the Manufacture of Electrolytic Manganese Dioxide by K. Shimizu, pp. 233-236 (1970) no month available. |
Titanium as a Substrate for Electrodes, by P C S Hayfield, Research & Dev. Department, IMI plc, Kynoch Works, Witton Birmingham B6 7BA England, pp. 1-11, Figures 1-13 no date available. |
Divisions (1)
|
Number |
Date |
Country |
Parent |
132975 |
Oct 1993 |
|
Continuations (1)
|
Number |
Date |
Country |
Parent |
686963 |
Apr 1991 |
|
Continuation in Parts (1)
|
Number |
Date |
Country |
Parent |
374429 |
Jun 1989 |
|