Claims
- 1. A method of preparing a thermoluminescent phosphor for use as a dosimeter comprising:
- providing a thermoluminescent phosphor of LiF doped with magnesium;
- heating said phosphor to a temperature in excess of 400.degree. C.; and
- contacting said phosphor with a boron-containing vapor whereby boron is diffused into the surface portion of said phosphor.
- 2. The method of claim 1 wherein said boron-containing vapor is provided by maintaining boron in the form selected from boric acid, elemental boron, an oxide of boron and boron nitride, at a temperature effective to provide sufficient boron-containing vapor to diffuse at least 2 ppm boron into surface portions of said phosphor.
- 3. The method of claim 2 wherein said boron-containing vapor is provided by maintaining boric acid at a temperature of about 100.degree. to 200.degree. C.
- 4. The method of claim 1 wherein said phosphor is established at a negative potential respecting an anode within a thermionic device, and boron containing vapor is ionized within said device to ion implant boron within said phosphor.
- 5. The method of claim 1 wherein said boron-containing vapor is maintained in contact with said phosphor at about 400.degree.-800.degree. C. for 5 minutes to 15 hours at a concentration of about 100 ppm of boron in an inert gas.
- 6. The method of claim 1 wherein said phosphor is contacted with a boron-containing vapor for a time effective to diffuse 2 to 30 ppm boron into only its surface portions.
- 7. The method of claim 1, wherein said thermoluminescent phosphor is maintained at a temperature of about 600.degree.-700.degree. C. in the presence of a boron containing vapor for a sufficient time to diffuse in excess of 2 ppm boron into only the outer surface portions of said phosphor for use as a dosimeter to discriminate low-energy beta radiation from more penetrating radiation.
- 8. The method of claim 7 wherein the outer surface portions of said phosphor diffused with boron in excess of 2 ppm are about the outer 3 .mu.m surface layer thickness for capturing beta radiation emitted from tritium.
Parent Case Info
This is a division of application Ser. No. 819,429, filed July 27, 1977 now U.S. Pat. No. 4,121,010.
CONTRACTUAL ORIGIN OF THE INVENTION
The invention described herein was made in the course of, or under, a contract with the U.S. ENERGY RESEARCH AND DEVELOPMENT ADMINISTRATION
US Referenced Citations (9)
Divisions (1)
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Number |
Date |
Country |
Parent |
819429 |
Jul 1977 |
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