Claims
- 1. A semiconductor device having a semiconducting layer comprising a polythiophene which is derived by thermal separation of thermally separable substituents from a soluble precursor compound having a precursor unit consisting of a tetrahydrothiophene or tetrahydrofuran unit having thermally separable substituents —SR1 and —SR2 groups, wherein R1 are R2 are independently selected from alkyl and aryl groups.
- 2. A semiconductor device as claimed in claim 1, wherein said precursor unit is selected from compounds having the formula (I) wherein X is equal to O or S; R1 and R2 are independently selected as an alkyl or aryl group; R3 and R4 are methyl, ethyl, methoxy, ethoxy, nitro or hydrogen; and R5 and R6 are hydrogen.
- 3. A semiconductor device as claimed in claim 2, wherein R1 and R2 of the precursor unit are an alkyl or aryl group selected from the group consisting of phenyl, 4-methylphenyl, 4-chlorophenyl, 4-nitrophenyl, 4-pyridyl, ethyl, and tert-butyl groups.
- 4. A semiconductor device as claimed in claim 2, wherein said precursor unit is a 2,5-dithienyltetrahydrothiophene or 2,5-dithienyltetrahydrofuran unit.
- 5. A semiconductor device as claimed in claim 2, wherein said precursor unit is a 3-phenylthio-2,5-di(2-thienyl)-2,3-dihydrohydrothiophene unit.
- 6. A semiconductor device as claimed in claim 1, wherein said soluble precursor compound is selected from the group consisting of 3,4-bis(phenylthio)-2,5-di(2-thienyl)-tetrahydrofuran, 3,4-bis(phenylthio)-2,5-di(2-thienyl)-tetrahydrothiophene, 3,4-bis((4-chloro)phenylthio)-2,5-di(2-thienyl)-tetrahydrothiophene, 3,4-bis((4-methyl)phenylthio)-2,5-di(2-thienyl)-tetrahydrothiophene, 3,4-diethyl-2,5-di(2-thienyl)-tetrahydrothiophene, 3,4-di(tert-butyl)-2,5-di(2-thienyl)-tetrahydrothiophene, 3,4-bis((4-nitro)phenylthio)-2,5-di(2-thienyl)-tetrahydrothiophene, 3,4-bis((4-pyridyl)-2,5-di(2-thienyl)-tetrahydrothiophene, 3,4-bis(phenylthio)-2,5-di(5-bromo-2-thienyl)-tetrahydrothiophene, dimer of 3,4-bis(phenylthio)-2,5-di(2-thienyl)-tetrahydrothiophene, trimer of 3,4-bis(phenylthio)-2,5-di(2-thienyl)-tetrahydrothiophene, 3,4-bis(phenylthio)-2,5-di[5-(2,2′-bithienyl)]-tetrahydrothiophene, 3,4-bis(phenylthio)-2,5-di[5-(2,2′:5′,2″-terthienyl)]-tetrahydrothiophene, and poly[3,4-bis(phenylthio)-2,5-di(2-thienyl)-tetrahydrothiophene].
- 7. A semiconductor device as claimed in claim 6 wherein said precursor compound is 3,4-bis(phenylthio)-2,5-di(2-thienyl)-tetrahydrofuran.
- 8. A semiconductor device as claimed in claim 6 wherein the soluble precursor compound is 3,4-bis(phenylthio)-2,5-di(2-thienyl)-tetrahydrothiophene.
- 9. A semiconductor device as claimed in claim 6, wherein the soluble precursor compound is 3,4-bis((4-chloro)phenylthio)-2,5-di(2-thienyl)-tetrahydrothiophene.
- 10. A semiconductor device as claimed in claim 6, wherein the soluble precursor compound is 3,4-bis((4-methyl)phenylthio)-2,5-di(2-thienyl)-tetrahydrothiophene.
- 11. A semiconductor device as claimed in claim 6, wherein the soluble precursor compound is 3,4-diethyl-2,5-di(2-thienyl)-tetrahydrothiophene.
- 12. A semiconductor device as claimed in claim 6, by wherein the soluble precursor compound is 3,4-di(tert-butyl)-2,5-di(2-thienyl)-tetrahydrothiophene.
- 13. A semiconductor device as claimed in claim 6, wherein the soluble precursor compound is 3,4-bis((4-nitro)phenylthio)-2,5-di(2-thienyl)-tetrahydrothiophene.
- 14. A semiconductor device as claimed in claim 6, wherein the soluble precursor compound is 3,4-bis((4-pyridyl)-2,5-di(2-thienyl)-tetrahydrothiophene.
- 15. A semiconductor device as claimed in claim 6, wherein the soluble precursor compound is 3,4-bis(phenylthio)-2,5-di(5-bromo-2-thienyl)-tetrahydrothiophene.
- 16. A semiconductor device as claimed in claim 6, wherein the soluble precursor compound is the dimer of 3,4-bis(phenylthio)-2,5-di(2-thienyl)-tetrahydrothiophene.
- 17. A semiconductor device as claimed in claim 6, wherein the soluble precursor compound is the trimer of 3,4-bis(phenylthio)-2,5-di(2-thienyl)-tetrahydrothiophene.
- 18. A semiconductor device as claimed in claim 6, wherein the soluble precursor compound is 3,4-bis(phenylthio)-2,5-di[5-(2,2′-bithienyl)]-tetrahydrothiophene.
- 19. A semiconductor device as claimed in claim 6, wherein the soluble precursor compound is 3,4-bis(phenylthio)-2,5-di[5-(2,2′:5′,2″-terthienyl)]-tetrahydrothiophene.
- 20. A semiconductor device as claimed in claim 6, wherein the soluble precursor compound is poly[3,4-bis(phenylthio)-2,5-di(2-thienyl)-tetrahydrothiophene].
Priority Claims (1)
| Number |
Date |
Country |
Kind |
| 97200760 |
Mar 1997 |
EP |
|
CROSS REFERENCE TO RELATED APPLICATIONS
This is a divisional of application Ser. No. 09/158,630, filed Sep. 22, 1998, now U.S. Pat. No. 5,919,951 which is a divisional of application Ser. No. 09/039,599, now U.S. Pat. No. 6,124,475 filed Mar. 16, 1998.
Non-Patent Literature Citations (5)
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| “Novel Approaches Toward Ninhydrin Analogs” R. Hark Et Al, Tetrahedron Letters, vol. 35, No. 42, pp. 7719-7722, 1994. |
| “Synthesis And Properties Of 2-or 2,5 Substituted Thiophene And 2-Or 2,5′Substituted Dithiophene Derivatives Of Platinum” S. Kotani Et Al, Jour. Of Organometallic Chemistry, 429 (1992) P. 403-413. |