Claims
- 1. A process for hydrothermally preparing a crystalline silica polymorph which comprises: (1) subjecting an aqueous reaction mixture to high shear mixing for 4 to 100 hours at a temperature of from 250.degree. to 380.degree. F., said reaction mixture containing from 2 to 6 weight percent of sodium oxide, from 8 to 16 weight percent of silicon oxide, from 0.01 to 0.25 weight percent of disodium 4-dodecylated oxydibenzene sulfonate, from 2 to 5 weight percent of anhydrous sulfuric acid, from 0.5 to 3 weight percent of sodium chloride and either from 6 to 13 weight percent of tetrapropyl ammonium bromide or a mixture which comprises from 2 to 4 weight percent of tripropylamine, from 1 to 3 weight percent of 1-bromopropane and from 3 to 6 weight percent of methylethyl ketone, and (2) crystallizing said silica polymorph during said high shear mixing, wherein said crystalline silica polymorph after calcination at 1,000.degree. F. for 16 hours, has as the four strongest d-values of its X-ray diffraction pattern, d=11.05, d=9.96, d=3.82 and d=3.34.
- 2. The process according to claim 1 wherein the silica polymorph is prepared under a pressure of from 15 to 300 p.s.i.g.
- 3. The process according to claim 1 wherein the high shear mixing comprises agitation equivalent to a mixing blade peripheral speed of from 360 to 900 ft/minute and a mixture velocity gradient of from 7,000 to 18,000 ft/minute/ft.
- 4. A process for hydrothermally preparing a crystalline silica polymorph which comprises: (1) forming an aqueous reaction mixture by admixing from 3 to 5 weight percent of sodium oxide, from 10 to 13 weight percent of silicon oxide, from 0.02 to 0.20 weight percent of disodium 4-dodecylated oxydibenzene sulfonate, from 3 to 4 weight percent of anhydrous sulfuric acid, from 1 to 3 weight percent of sodium chloride, and either from 7 to 11 weight percent of tetrapropyl ammonium bromide or a mixture comprising from 2 to 3 weight percent of tripropylamine, from 2 to 3 weight percent of 1-bromopropane and from 3 to 5 weight percent of methyl ethyl ketone, (2) subjecting said reaction mixture to high shear mixing for 4 to 100 hours at a temperature of from 250.degree. to 340.degree. F., and (3) crystallizing said silica polymorph during said high shear mixing, wherein said crystalline silica polymorph after calcination at 1,000.degree. F. for 16 hours, has as the four strongest d-values of its X-ray diffraction pattern, d=11.05, d=9.96, d=3.82 and d=3.34.
- 5. The process according to claim 4 wherein the silica polymorph is prepared under a pressure of from 15 to 200 p.s.i.g.
- 6. The process according to claim 4 wherein the high shear mixing comprises agitation equivalent to a mixing blade peripheral speed of from 360 to 700 ft/minute and a mixture velocity gradient of from 7,000 to 14,000 ft/minute/ft.
- 7. A process for hydrothermally preparing a crystalline silica polymorph which comprises: (1) forming an aqueous reaction mixture by admixing from 3 to 5 weight percent of sodium oxide, from 10 to 13 weight percent of silicon oxide, from 0.02 to 0.20 weight percent of disodium 4-dodecylated oxydibenzene sulfonate, from 3 to 4 weight percent of anhydrous sulfuric acid, from 1 to 3 weight percent of sodium chloride, and either from 7 to 11 weight percent of tetrapropyl ammonium bromide or a mixture comprising from 2 to 3 weight percent of tripropylamine, from 2 to 3 weight percent of 1-bromopropane and from 3 to 5 weight percent of methyl ethyl ketone, (2) subjecting said reaction mixture to high shear mixing which comprises agitation equivalent to a mixing blade peripheral speed of from 360 to 700 ft/minute and a mixture velocity gradient of from 7,000 to 14,000 ft/minute/ft, at a temperature of from 250.degree. to 340.degree. F. and a pressure of from 15 to 200 p.s.i.g., for 4 to 100 hours, and (3) crystallizing said silica polymorph during said high shear mixing, wherein said crystalline silica polymorph after calcination at 1,000.degree. F. for 16 hours, has as the four strongest d-values of its X-ray diffraction pattern, d=11.05, d=9.96, d=3.82 and d=3.34.
RELATED APPLICATIONS
This application is a continuation-in-part of application Ser. No. 12,867, filed Feb. 16, 1979 now abandoned.
US Referenced Citations (4)
Continuation in Parts (1)
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Number |
Date |
Country |
Parent |
12867 |
Feb 1979 |
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