Claims
- 1. A method for producing a magnetic recording medium which comprises:
- forming, on a base, a thin ferromagnetic layer having a thickness of not more than 0.8 .mu.m by a deposition process using a first target material as the source of the thin ferromagnetic layer material; and
- forming on the ferromagnetic layer, by a physical vapor deposition process, using a second target material which has a chemical composition different from the first target material, a protective layer consisting essentially of Co.sub.3 O.sub.4.
- 2. A continuous method of claim 1 which comprises: forming, the ferromagnetic thin layer on a base in a first deposition zone; continuously transporting the base having the ferromagnetic thin layer to a second deposition zone without exposure to air; and forming the protective layer on the ferromagnetic layer in the second deposition zone by a physical vapor deposition method.
- 3. The method of claim 2, wherein the ferromagnetic thin layer is formed in a first deposition zone which is a sputter coating deposition zone.
- 4. A method for producing a magnetic recording medium of claim 1, which comprises:
- forming, a on a base of a polymer film, a ferromagnetic metal thin layer consisting of a Permalloy thin film and a Co-Cr alloy having a thickness of not more than 0.4 .mu.m by an opposite target type sputtering method; and
- forming, on said ferromagnetic metal thin layer, a protective layer of Co.sub.3 O.sub.4 by a sputtering method.
- 5. A method according to claim 1, wherein said physical vapor deposition is sputtering comprising a step of locating said base having the ferromagnetic metal thin layer, in a sputtering vessel in which a target is positioned.
- 6. A method according to claim 5, wherein said sputtering is a high frequency magnetron sputtering using a cobalt oxide as a target material of the sputtering.
- 7. A method according to claim 5, wherein said sputtering is a direct current magnetron sputtering using a metallic cobalt as a target material and an oxidizing atmosphere.
- 8. A method according to claim 5, wherein said sputtering is an opposed-targets method using a pair of targets made of metallic cobalt and is carried out in an oxidizing gas atmosphere.
- 9. A method according to claim 5, wherein the ferromagnetic layer and protective layer are successively formed without exposure of the recording layer to air.
Priority Claims (8)
Number |
Date |
Country |
Kind |
59-230075 |
Feb 1984 |
JPX |
|
60-93720 |
May 1985 |
JPX |
|
60-93721 |
May 1985 |
JPX |
|
60-93722 |
May 1985 |
JPX |
|
60-93723 |
May 1985 |
JPX |
|
60-93724 |
May 1985 |
JPX |
|
60-108382 |
May 1985 |
JPX |
|
60-112070 |
May 1985 |
JPX |
|
Parent Case Info
This application is a continuation of application Ser. No. 236,318, filed 8/22/88, which is a continuation of application Ser. No. 078,498, filed July 27,1987, which is a division of application Ser. No. 793,633, filed 10/31/85, all now abandoned.
US Referenced Citations (15)
Foreign Referenced Citations (5)
Number |
Date |
Country |
0019693 |
Dec 1980 |
EPX |
0097975 |
Jan 1984 |
EPX |
41439 |
Mar 1983 |
JPX |
208935 |
Dec 1983 |
JPX |
1522505 |
Aug 1978 |
GBX |
Non-Patent Literature Citations (4)
Entry |
Chemical Abstracts, vol. 83, 1977, p. 508 Abst. No. 62712t. |
Patent Abstracts of Japan, vol. 8, No. 60 (p-262) 3/22/84. |
Patent Abstracts of Japan, vol. 7, No. 125 (p-200) 5/31/83. |
Patent Abstracts of Japan, vol. 7, No. 159 (M-228) 7/13/83. |
Divisions (1)
|
Number |
Date |
Country |
Parent |
793633 |
Oct 1985 |
|
Continuations (2)
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Number |
Date |
Country |
Parent |
236318 |
Aug 1988 |
|
Parent |
78418 |
Jul 1987 |
|