Claims
- 1. A method of producing an electronic component, which comprises:
- providing electrically conductive surface acoustic wave structures on a surface of a substrate;
- forming a gas diffusion-constricting protective layer formed of an oxide on the conductive surface acoustic wave structures by a process selected from the group consisting of electrochemical coating and ion bombardment;
- encapsulating the conductive surface acoustic wave structures and the protective layer with an encapsulation applied on the substrate and sealing the conductive structures; and
- saturating reactive groups in the protective layer with metal-organic compounds.
- 2. The method according to claim 1, which comprises selecting silanes as the metal-organic compounds.
- 3. A method of producing an electronic component, which comprises:
- providing electrically conductive surface acoustic wave structures on a surface of a substrate;
- forming a gas diffusion-constricting protective layer formed of an oxide of the conductive surface acoustic wave structures material on the conductive surface acoustic wave structures by a process selected from the group consisting of electrochemical coating and ion bombardment, saturating reactive groups in the protective layer with metal-organic compounds; and
- encapsulating the conductive surface acoustic wave structures and the protective layer with an encapsulation applied on the substrate and sealing the conductive structures, the conductive structures have contact pads for electrically connecting the electronic component, and the method further comprises forming an additional protective layer on the substrate and on the protective layer and covering, with the additional protective layer, the conductive structures except for the contact pads.
- 4. A method of producing an electronic component, which comprises:
- providing electrically conductive structures on a surface of a substrate wherein the conductive structures have contact pads for electrically connecting the electronic component;
- forming a gas diffusion-constricting protective layer on the conductive structures by a process selected from the group consisting of electrochemical coating and ion bombardment;
- encapsulating the conductive structures and the protective layer with an encapsulation applied on the substrate and sealing the conductive structures; and
- applying an organic polymer on the protective layer forming an additional protective layer on the substrate and on the protective layer and covering the conductive structures except for the contact pads.
- 5. The method according to claim 4, wherein the providing step comprises forming surface acoustic wave structures on the substrate.
- 6. A method of producing an electronic component, which comprises:
- providing electrically conductive structures on a surface of a substrate;
- forming a gas diffusion-constricting protective layer on the conductive structures by a process selected from the group consisting of electrochemical coating and ion bombardment;
- saturating reactive groups in the protective layer with metal-organic compounds; and
- encapsulating the conductive structures and the protective layer with an encapsulation applied on the substrate and sealing the conductive structures.
- 7. The method according to claim 6, which comprises selecting silanes as the metal-organic compounds.
- 8. The method according to claim 6, which further comprises saturating reactive groups in the protective layer and in an additional protective layer with metal-organic compounds.
- 9. The method according to claim 6, wherein the providing step comprises forming the electrically conductive structures with a material selected from the group consisting of Al, Al+Si, and Al+Ta.
CROSS-REFERENCE TO RELATED APPLICATION
This is a continuation of copending international application PCT/DE96/02410, filed Dec. 16, 1996, which designated the United States.
US Referenced Citations (2)
Number |
Name |
Date |
Kind |
4617487 |
Sone et al. |
Oct 1986 |
|
5815900 |
Ichikawa et al. |
Oct 1998 |
|
Foreign Referenced Citations (3)
Number |
Date |
Country |
4328794 A1 |
Mar 1995 |
DEX |
61-102810 |
May 1986 |
JPX |
2067009 |
Jul 1981 |
GBX |
Non-Patent Literature Citations (1)
Entry |
International Publication WO 95/30276 (Furbacher, B. et al.), dated Nov. 9, 1995. |
Continuations (1)
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Number |
Date |
Country |
Parent |
PCTDE9602410 |
Dec 1996 |
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