This application claims priority from German Patent Application No. DE 102019210177.1, which was filed on Jul. 10, 2019, and is incorporated herein in its entirety by reference.
The present Invention Report describes a method of oppositely magnetizing microstructures of permanent-magnetic materials on planar substrates. The present application deals with selective magnetization of miniaturized, permanent-magnetic arrangements.
Permanent-magnetic arrangements based on structures having different magnetic orientations are of fundamental importance for a multitude of technical devices. There is wide interest in being able to apply the solutions which have established themselves in the field of conventional technology also to microsystems.
A first precondition of this is that hard magnetic structures or microstructures on typical substrates of semiconductor and/or MEMS technology may be produced from silicon and/or glass.
A second precondition is that adjacent magnets or micromagnets may be magnetized in different directions, or may be oppositely magnetized, as desired. Since a substrate may have several hundred or several thousand MEMS components located thereon, each of which may contain several hard magnetic microstructures, serial magnetization as is common in producing conventional magnetic scales, for example, would be too time-consuming.
In addition, the smallest possible period, the so-called pitch, which may be implemented by means of currently available devices, amounts to 0.5 mm. One may assume that both the dimensions of the micromagnets and the distances therebetween may be clearly smaller in many cases of application. There have been several methods of producing magnetic structures or micromagnetic structures, some of which will be listed below.
The above-mentioned variants of thermomagnetic patterning would be best suited for MEMS since the micromagnets thus produced ensure large forces because of the material and the comparatively large volume. Integration into MEMS production processes is unresolved, however. The methods enable only very weak micromagnets unsuitable for MEMS actuators. In addition, integration into MEMS production processes is problematic in these cases, too, if the hard magnetic layers have to be patterned. Conventional laser processing tends to be unsuitable for MEMS because of high cost and/or of the incompatibility in terms of batch processing.
However, a technological method based on the agglomeration of powder by means of atomic layer deposition (ALD) enables producing high-performance magnets or micromagnets on silicon and glass substrates which are compatible with standard processes of MEMS and semiconductor processing. This method will be described hereafter.
Initially, cavities or microcavities are created within the substrate. Subsequently, the microcavities are filled with loose powder, or particles, of sizes in terms of μm. Thereafter, the substrate is exposed to ALD, during which process the initially loose particles within the microcavities are agglomerated to form mechanically firm, porous microstructures. For such structures manufactured, e.g., of NdFeB powder on Si substrates, excellent magnetic properties with high reproducibility have been confirmed. The magnets or micromagnets and/or the magnetic fields of the micromagnets are all aligned in parallel.
According to an embodiment, a method of producing a magnetic structure within or on a substrate material may have the steps of: producing a first number of cavities within or on the substrate material, and filling the first number of cavities with a first hard magnetic material exhibiting a first coercive field strength so as to generate a first hard magnetic arrangement; producing a second number of cavities within or on the substrate material, and filling the second number of cavities with a second hard magnetic material exhibiting a second coercive field strength, which is smaller than the first coercive field strength, so as to create a second hard magnetic arrangement; magnetizing the first and second hard magnetic arrangements in a first direction by means of a first magnetic field exhibiting a field strength which exceeds the first and second coercive field strengths; magnetizing the second hard magnetic arrangement in a second direction different from the first direction by means of a second magnetic field exhibiting a field strength which falls below the first coercive field strength but exceeds the second coercive field strength; wherein said magnetization of the second hard magnetic arrangement includes exposing the first and second hard magnetic arrangements to the second magnetic field.
Another embodiment may have a magnetic structure within or on a substrate material including a plurality of hard magnetic arrangements, wherein a first hard magnetic arrangement includes a first number of hard magnetic structures, the structures each including a first hard magnetic material exhibiting a first coercive field strength, wherein a second hard magnetic arrangement includes a second number of hard magnetic structures, the structures each including a second hard magnetic material exhibiting a second coercive field strength, and wherein the first and second hard magnetic arrangements are magnetized in different directions.
Yet another embodiment may have a 3D magnetic structure,
Yet another embodiment may have a 3D magnetic structure,
A core idea of the present method (see claim 1) consists in having found that it is possible to produce magnetic structures having oppositely magnetized arrangements of hard magnetic structures within or on a substrate material by means of the following steps.
The order of the steps described in 1. and 2. is flexible as a function of the commonly used production conditions of semiconductor and MEMS technology.
As an alternative to steps 1. and 2., e.g., the first and second numbers of cavities may be produced, within or on a substrate material, in parallel or one after the other, and the first and second cavities produced may be filled with the first and second hard magnetic materials, respectively, in parallel or one after the other.
Hard magnetic microstructures or arrangements of hard magnetic structures produced within or on a substrate may be magnetized in one step at the substrate level by means of, e.g., a suitable magnetization device. In this process, the magnets or micromagnets are oppositely magnetized, e.g., in an alternating manner. Magnetizing systems which are able to produce fields of several thousand kA/m across an area of a diameter of 300 mm are available.
Arrangements of hard magnetic structures or microstructures of different hard magnetic materials also enable opposite magnetization.
Initially, arrangements of hard magnetic structures (or microstructures) are produced from a first hard magnetic material A having the coercive field strength HCA.
On other areas of the substrate, arrangements of hard magnetic structures or microstructures are thereafter produced, in this manner, from a second hard magnetic material B having the coercive field strength HCB. HCB is smaller than HCA.
Subsequently, the arrangements of hard magnetic structures or microstructures of both types are magnetized in parallel by a magnetic field of the strength H1, which exceeds HCA and HCB, within one step.
Finally, the arrangements of hard magnetic structures or microstructures of the material B are re-magnetized by applying an opposite magnetic field of the strength H2, which is larger than HCB but smaller than HCA, in one step. The original magnetizations of the arrangements of hard magnetic structures or microstructures of the material A are maintained in the process.
Mass production of the oppositely magnetized arrangements of hard magnetic structures or microstructures is facilitated by accelerating the process. Magnetization of a hard magnetic material is performed in one step. In addition, utilizing several materials enables different magnetizations of the materials on the basis of the different coercive field strengths of the materials.
Typical dimensions of the arrangements of hard magnetic structures are as follows:
Advantageous dimensions of the arrangements of hard magnetic structures are as follows:
Opposite magnetizability of integrated arrangements of hard magnetic structures or microstructures are of interest, e.g., for
In accordance with embodiments (see claim 2) the method is one wherein the difference between the first and second coercive field strengths is more than 50%.
Since modern magnetizing devices enable setting and/or reproducing a magnetic field within an accuracy of a few percent, a difference in the coercive field strength of more than 50% between the materials is sufficient for implementing oppositely magnetized arrangements of hard magnetic structures or microstructures.
In accordance with embodiments (see claim 3), the method at hand is a method wherein the depths and/or the cross-sections of the first number of cavities for the first arrangement of hard magnetic structures differ from the depths and/or the cross-sections of the second number of cavities for the second arrangement of hard magnetic structures, so that the magnetic field strengths of the individual magnets within the first and second arrangements following magnetization are identical.
In other words, the method is one wherein the depths and/or the cross-sections of the magnets of the first arrangements differ from the depths and/or the cross-sections of the magnets of the second arrangement, so that the magnetic field strengths of the individual magnets following magnetization are identical.
Since the magnets or micromagnets consist of an arrangement made of two different magnetic materials having different properties, magnets or structures having identical dimensions will indeed result in fields having opposite signs but different strengths. This effect may be compensated for via the dimensions of the magnets or micromagnets of both kinds. Accordingly, the field generated by micromagnets made of different materials may be adapted in that, during their production, less deep cavities are etched into the substrate for the magnets or structures made of the first material than for the magnets or structures made of the second material.
In accordance with embodiments (see claim 4), the method is one wherein the cross-sections of the first and second numbers of cavities are identical and the depths of the first and second numbers of the cavities differ from each other, so that the magnetic field strengths of the individual magnets within the first and second arrangements of hard magnetic structures following magnetization are identical.
In other words, the method is one wherein the cross-sections of the magnets of the first and second arrangements of hard magnetic structures are identical and the depths of the magnets of the first and second arrangements of hard magnetic structures differ from each other, so that the magnetic field strengths of the individual magnets following magnetization are identical.
A specific advantage of this embodiment is that the cross-section of all magnets or micromagnets may stay the same. This may be significant, e.g., for magnetic scales.
In accordance with embodiments (see claim 5), the method is one wherein filling of the first and second numbers of cavities comprises physical and/or chemical solidification of the material filled in, e.g., by exposing the substrate material to atomic layer deposition.
The initially loose hard magnetic particles and/or powders are agglomerated, within the cavities or microcavities, to form mechanically firm, porous structures or microstructures.
In accordance with embodiments (see claim 6), the method is one wherein the substrate material is glass material, silicon material, plastic material or ceramic material.
Using common substrate materials such as glass, silicon, plastic or ceramic, for example, facilitates applying the inventive method in the usual production conditions of semiconductor and MEMS technology.
In accordance with embodiments (see claim 7), the method is one wherein the first and second hard magnetic materials are NdFeB material and/or SmCo material and/or PtCo material.
Using common hard magnetic materials such as NdFeB and/or SmCo and/or PtCo, for example, facilitates applying the inventive method in the usual production conditions of semiconductor and MEMS technology.
In accordance with embodiments (see claim 8), the method is one wherein the first and second hard magnetic materials are formed of powdery material and/or material particles.
Powdery materials and/or particles enable filling the cavities with different cross-sections and/or depths.
In accordance with embodiments (see claim 9), the method is one wherein producing the arrangements of hard magnetic structures within or on the substrate includes the following steps.
The first and second substrates are connected prior to magnetization.
The substrates each contain magnets or micromagnets made of one material only and are firmly connected to each other, prior to magnetization, via bonding at the substrate level. The silicon technology has a number of established bonding processes available to it which are based, e.g., on printed glass frit, or galvanically deposited Au—Sn stacks for hermetic connection, or, while using patterned adhesives and polymers, for non-hermetic connections.
By stacking substrates, three-dimensional arrangements of hard magnetic microstructures are also possible. Since the geometries and positioning of the magnets or micromagnets within the corresponding substrate may vary as desired, it is possible to produce arrangements of mutually repelling magnets or micromagnets in this manner.
In accordance with embodiments (see claim 10), the method is one wherein producing the arrangements of hard magnetic structures within or on the substrate includes the following steps.
The first and second substrates are connected prior to magnetization.
Since the geometries and positioning of the individual magnets or micromagnets on any of the substrates may vary as desired, it is possible to produce arrangements of mutually repelling micromagnets in this manner.
In addition, using first and second hard magnetic structures within the first and/or second substrate(s) enables producing a multitude of three-dimensional arrangements of hard magnetic microstructures.
In accordance with embodiments (see claim 11), the method is one wherein the individual magnets of the first and second arrangements of hard magnetic structures are alternately arranged within or on a substrate material.
In accordance with embodiments (see claim 12), the method is one wherein the first and/or the second arrangement(s) of hard magnetic structures is/are located either on a first surface of the substrate material or extend(s) from a first surface of the substrate material as far as a predetermined depth of the substrate material or as far as a second surface located opposite the first surface. The first and/or second arrangement(s) of hard magnetic structures may have any depth, depending on the application, and may even extend as far as the second surface of the substrate material.
By using a continuous structure, one achieves a particularly high magnetic field strength thanks to a higher (maximum) aspect ratio, see also
Embodiments of the present invention will be detailed subsequently referring to the appended drawings, in which:
Specifically, there are a multitude of possibilities of implementing the inventive methods and of developing them further. To this end, reference shall be made to the claims, on the one hand, and to the following description of embodiments in connection with the drawings, on the other hand.
In
In
In
In
In
In
In
In
In other words,
Using arrangements of hard magnetic structures or microstructures made of different hard magnetic materials facilitates opposite magnetization.
Initially, hard magnetic structures or microstructures are produced from a first hard magnetic material 130 having the coercive field strength HCA.
Subsequently, hard magnetic structures or microstructures made of a second hard magnetic material 140 exhibiting the coercive field strength HCB are produced, in the same manner, on other areas of the substrate 110. HCB is smaller than HCA.
Subsequently, the hard magnetic structures or microstructures of both types are magnetized in parallel in one step by a magnetic field of the strength H1, which exceeds HCA and HCB.
Finally, the hard magnetic structures or microstructures of the material 140 are remagnetized in one step by applying an opposite magnetic field of the strength H2, which is larger than HCB but smaller than HCA. The original magnetization of the hard magnetic structures or microstructures made of the material 130 is maintained in the process. A result of the method 100A and/or 100B is depicted in
In
In
In
In
The cavities produced in
In other words,
Since the magnets or micromagnets consist of a magnetic structure having arrangements of hard magnetic structures made of two different magnetic materials exhibiting different properties, and since magnetization of the magnets or micromagnets made of the second hard magnetic material 140 is incomplete, see
The coercive field strength HC may vary strongly even for one and the same material. Table 1 shows, by way of example, the properties of different NdFeB-based powders by one suppler (“Magnequench”) of the starting materials for producing permanent magnets. However, it is also to be taken into account that complete magnetization, e.g., in the method 100A in
In other words,
When it is assumed that for parallel magnetization of an arrangement of oppositely magnetized magnets or micromagnets in accordance with
If, subsequently, a reverse field of 800 kA/m in accordance with
In other words,
Since the magnets or micromagnets consist of a magnetic structure having arrangements of hard magnetic structures in accordance with
Since the coercive field strength He generally does not depend on the dimensions or on the porosity of the magnets or micromagnets but depends only on the material used, this effect may be compensated for, e.g., via the dimensions of the magnets or micromagnets of both types.
The approach, described in
The cavities extend from the first surface 113 of the substrate material toward a second surface 116 located opposite the first surface.
A first number of cavities having a first depth are filled with a first material 130 so as to produce a first arrangement of hard magnetic structures. A second number of cavities having a second depth are filled with a second material 140 so as to produce a second arrangement of hard magnetic structures. The alternatingly arranged structures of the first and second arrangements of hard magnetic structures made of the first and second hard magnetic materials 130, 140 are oppositely magnetized.
In other words, two-dimensional arrangements of hard magnetic structures comprising magnetic fields of equal strengths may be produced from hard magnetic structures or microstructures having opposite magnetization within or on planar substrates, e.g., made of silicon and/or glass and/or plastic and/or ceramic.
The method 100A in
The first and/or second arrangements of hard magnetic structures extend at random from the first surface as far as a predetermined depth of the substrate material or even as far as the plate 810 and/or the second surface 116 of the substrate material.
Instead of a plate 810, the surface 116 may be covered with a thin layer on which etching of the continuous cavities stops. In this case, the plate 810 would be integrated on the substrate.
Alternatively, a continuous hard magnetic structure may be produced by performing the steps of
The first and/or second arrangement(s) of hard magnetic structures may have any depth, depending on the application, and may even extend as far as the second surface of the substrate material.
By using a continuous structure, one achieves a particularly high magnetic field strength thanks to a higher (maximum) aspect ratio, see also
The first and second arrangements comprise first and second hard magnetic structures. The first and second hard magnetic structures made of the first and second hard magnetic materials are arranged in any manner desired, not only in an alternating manner.
This magnetic structure 900, which has been established by the method 100A in
The two arrangements 1140a, 1140b contain micromagnets made of different hard magnetic materials.
In other words,
The method 100A in
Following explanations of the embodiments of the present invention, known conventional methods will initially be presented.
A laser-based material processing has been allowing for a long time already to produce three-dimensional components of complex shapes with high precision. An oppositely magnetized scale with a period of 250 μm is implemented by interleaving of individually magnetized combs. Production of the individual combs is effected by means of laser processing of an SmCo film of a thickness of 300 μm.
In so-called “thermomagnetic patterning”, a homogeneously pre-magnetized layer made of a hard magnetic material is locally heated up by means of laser, through a template and/or mask, and is oppositely magnetized in those areas by means of an opposite magnetic field applied at the same time, see
One variant of thermomagnetic patterning is described in
Subsequently, individual pixels or lines are oppositely magnetized by selective heating using laser. The magnetic field that may be used is provided by the directly adjacent NdFeB structures.
When using a template and/or mask of a soft magnetic material with high permeability, magnetic patterns may also be produced, within a hard magnetic layer, without heating.
While this invention has been described in terms of several embodiments, there are alterations, permutations, and equivalents which fall within the scope of this invention. It should also be noted that there are many alternative ways of implementing the methods and compositions of the present invention. It is therefore intended that the following appended claims be interpreted as including all such alterations, permutations and equivalents as fall within the true spirit and scope of the present invention.
Number | Date | Country | Kind |
---|---|---|---|
102019210177.1 | Jul 2019 | DE | national |
Number | Name | Date | Kind |
---|---|---|---|
5396136 | Pelrine et al. | Mar 1995 | A |
7428092 | Lee | Sep 2008 | B2 |
9221217 | Lisec et al. | Dec 2015 | B2 |
10014465 | Liu et al. | Jul 2018 | B1 |
10202577 | Spuhler et al. | Feb 2019 | B2 |
10854223 | Lisec | Dec 2020 | B2 |
11212003 | Jungnickel | Dec 2021 | B2 |
20070195587 | Kim et al. | Aug 2007 | A1 |
20080218299 | Arnold | Sep 2008 | A1 |
20090008922 | Schutzmann et al. | Jan 2009 | A1 |
20090278642 | Fullerton et al. | Nov 2009 | A1 |
20130082105 | Schutzmann et al. | Apr 2013 | A1 |
20160055358 | Paul et al. | Feb 2016 | A1 |
20160093424 | Zhu et al. | Mar 2016 | A1 |
20180053523 | Lisec et al. | Feb 2018 | A1 |
20180102681 | Prussmeier | Apr 2018 | A1 |
20200211747 | Heinrich et al. | Jul 2020 | A1 |
20200282463 | Fujikawa et al. | Sep 2020 | A1 |
Number | Date | Country |
---|---|---|
102939620 | Feb 2013 | CN |
105074785 | Nov 2015 | CN |
107765195 | Mar 2018 | CN |
1564315 | Sep 1969 | DE |
3026299 | Feb 1982 | DE |
102016215616 | Feb 2018 | DE |
S54-152200 | Nov 1979 | JP |
H06-260339 | Sep 1994 | JP |
2004-063050 | Feb 2004 | JP |
2007-227916 | Sep 2007 | JP |
2009-4069 | Jan 2009 | JP |
2012-529181 | Nov 2012 | JP |
2014-095535 | May 2014 | JP |
2018-201018 | Dec 2018 | JP |
2002-0020140 | Mar 2002 | KR |
2015058206 | Apr 2015 | WO |
2019030399 | Feb 2019 | WO |
Entry |
---|
Chinese language Notice of Allowance dated Sep. 20, 2022, issued in application No. CN 202010649585.5. |
English language translation of Notice of Allowance dated Sep. 20, 2022, issued in application No. CN 202010649585.5 (p. 1 of attachment). |
Wang, R.; “Spin transport and magnetization reversal in the vertically oriented magnetic multilayer films;” Apr. 2019; pp. 1-58. |
Abstract of “Spin transport and magnetization reversal in the vertically oriented magnetic multilayer films;” (pp. 5-6 of attachment). |
Chinese language office action dated Nov. 29, 2021, issued in application No. CN 202010649585.5. |
English language translation of office action dated Nov. 29, 2021, issued in application No. CN 202010649585.5. |
Wang, X., “Methods for Changing Distribution of Magnetizing Field of Permanent Magnet;” Micro motor; Mar. 2004; pp. 3-6. |
English language abstract of “Methods for Changing Distribution of Magnetizing Field of Permanent Magnet”. |
Japanese language office action dated Nov. 15, 2021, issued in application No. JP 2020-119128. |
English language translation of office action dated Nov. 15, 2021, issued in application No. JP 2020-119128. |
https://www.sensitec.com/fileadmin/sensitec/Products_and_Solutions/Angle_and_Length/Linear_Scales/SENSITEC_Magnetische_Massstaebe_DE (Mar. 2016). |
Petersen et al., “Laser micromachined permanent magnet arrays with spatially alternating magnetic field distribution”, Proc. PowerMEMS Conf., Atlanta, GA, USA, 2012. |
F. Dumas-Bouchiat et al., “Thermomagnetically patterned micromagnets”, Appl. Phys. Lett., 96, 102511 (2010). |
R Fujiwara et al., “Micrometer scale magnetization of neodymium magnet for integrated magnetic MEMS”, Proc. MEMS Conf., Shanghai, China, 2016. |
C. Valez et al., “Simulation and experimental validation of a selective magnetization process for batch-patterning magnetic layers”, J. Phys.: Conf. Ser. 660 012006, 2015. |
T. Reimer et al., “Temperature-stable NdFeB micromagnets with high-energy density compatible with CMOS back end of line technology”, MRS Advances, No. 1, 2016. |
https://www.magsys.de/index.php/de/produkte-dienstleistungen/magnetisiervorrichtungen. |
https://de.wikipedia.org/wiki/Magnetwerkstoffe. |
https://mqitechnology.com/products/bonded-neo-powder/product-comparison-tool/. |
https://mqitechnology.com/wp-content/uploads/2017/09/mqp-14-12-20000-070.pdf. |
https://mqitechnology.com/wp-content/uploads/2017/09/mqp-14-9-20061-070.pdf. |
Japanese language office action dated Nov. 7, 2022, issued in application No. JP 2020-119128. |
Number | Date | Country | |
---|---|---|---|
20210082611 A1 | Mar 2021 | US |