Claims
- 1. A method of producing a semiconductor film of Cu(MIII)(MVI)2 wherein MIII represents In1-xGax where x is between 0 and 1 and MVI represents SeyS1-y where y is between 0.5 and 1, comprising the steps of:(a) depositing on a substrate a precursor Cu(MIII)(MVI)2 film having a molar ratio of Cu:MIII of less than 1.0:1.0 but not less than 1.0:1.4 and (b) annealing said precursor film at a temperature of 400-500° C. in an oxygen-containing atmosphere to form a buffer layer of indium oxide and/or gallium oxide and a Cu(In1-xGax)(SeyS1-y)2 film interposed between said substrate and said buffer layer.
- 2. A method as claimed in claim 1, further comprising (c) removing said buffer layer.
- 3. A method as claimed in claim 2, wherein step (c) is by etching with an inorganic acid.
- 4. A method as claimed in claim 1, wherein step (a) is by multi-source elemental evaporation or by molecular beam epitaxy.
- 5. A method as claimed in claim 1, wherein step (a) is performed in the presence of a stoichiometrically excess amount of a gas containing a source of Se.
- 6. A semiconductor film of CuGa(SeyS1-y)2 obtained by a method according to claim 1.
- 7. A photovoltaic device having a semiconductor film of CuGa(SeyS1-y)2 obtained by a method according to claim 1.
Priority Claims (1)
Number |
Date |
Country |
Kind |
2001-130893 |
Apr 2001 |
JP |
|
CROSS-REFERENCE TO RELATED APPLICATIONS
The application claims, under 35 USC 119, priority of Japanese Application No. 2001-130893 filed Apr. 27, 2001.
US Referenced Citations (4)
Foreign Referenced Citations (1)
Number |
Date |
Country |
4-127483 |
Apr 1992 |
JP |