The present invention is related to production of a periodic polarization inversion structure by voltage application method.
It is known so-called voltage application method as a technique for forming a periodic polarization inversion structure in a ferroelectric non-linear optical material. According to the method, a comb-like electrode is formed on a main face and a uniform electrode is formed on another main face of a ferroelectric crystal substrate, and a pulse voltage is applied between them.
It is necessary to form a deep periodic polarization inversion structure in a ferroelectric crystal, for obtaining a high conversion efficiency in a second-harmonic wave generation device. According to patent document 1, it is described that a lithium niobate substrate with the comb electrode and uniform electrode formed thereon is laminated on and integrated with a separate lithium niobate substrate and is then immersed in an insulating oil in which a voltage is applied onto the electrodes.
Further, according to the method described in patent documents 2 and 3, an insulating film is provided on a surface of a Z-cut substrate of lithium niobate, stripe-shaped elongate spaces are formed in the insulating film, and a conductive film is provided to cover the insulating film and spaces. A pulse voltage is then applied on the conductive film to form periodic polarization inversion structures in the substrate.
It is necessary to increase the number of devices taken from a single wafer, for realizing the mass-production of the devices each having a periodic polarization inversion structure, for example, high harmonic wave generation devices. As the method of increasing the number of the devices, it is known two methods that the length of the device is made smaller and that an interval of positions of the devices is made smaller. In the case that the length of the device is made smaller according to the former method, the conversion efficiency is considerably lowered so that a desired optical output performance cannot be obtained. The length cannot be thus easily changed. On the other hand, in the case of the latter method that the interval of the devices is made smaller, the conditions of the step of forming a periodic polarization inversion structure are changed, so that it is necessary to confirm whether stable production is possible. However, different from the former method, the mass-production can be improved without sacrificing optical output performance. It was thus studied how much the distances between the adjacent periodic polarization inversion structures can be reduced. However, it was found that there was a limit on the improvement of the density of the periodic polarization inversion structures according to the following reason.
The problems will be described below referring to Drawings.
For example, as shown in
Here, as a voltage is applied between each of the electrode piece parts 3 and opposing electrode 22 as an arrow B, periodic polarization inversion structures are formed in the ferroelectric crystal substrate 1. That is, polarization inversion parts are formed under the electrodes piece parts 3, respectively, and non-polarization inversion parts are formed under the spaces 4. As a result, as shown in
The inventors then tried to reduce the period S of the electrode piece part-arrays 2, as shown in
An object of the present invention is to provide electrode piece part-arrays each composed of a plurality of electrode piece parts on a first main face of a ferroelectric crystal substrate and to apply a voltage onto the electrode piece part-arrays to form periodic polarization inversion structures, in which the period of the adjacent periodic polarization inversion structures is reduced, and at the same time, the breakdown can be prevented between the electrode piece part-arrays to improve the productivity of the periodic polarization inversion structures.
The present invention provides a method of producing a periodic polarization inversion structure in a ferroelectric crystal substrate having a first main face and a second main face, the method comprising the steps of:
providing first electrode piece part-arrays each comprising a plurality of electrode piece parts on the first main face of the ferroelectric crystal substrate;
forming first periodic polarization inversion structures by applying a voltage on said first electrode piece part-arrays;
providing second electrode piece part-array each comprising a plurality of electrode piece parts, between a plurality of the first periodic polarization inversion structures adjacent to each other; and
forming second periodic polarization inversion structures by applying a voltage on the second electrode piece part-arrays.
According to the present invention, periodic polarization inversion structures to be formed are divided into at least first and second groups, and the periodic polarization structures of the first group and the periodic polarization inversion structures of the second group are separately formed by the voltage application method. It is thereby possible to maintain the period of the adjacent arrays of the electrode piece parts large at the voltage application and, at the same time, to further reduce the period of the periodic polarization inversion structures. As a result, the period of the adjacent periodic polarization inversion structures can be made small and, at the same time, the breakdown between the electrode piece part-arrays can be prevented. The productivity of the periodic polarization inversion parts can be thus improved.
The embodiments of the present invention will be described further in detail, appropriately referring to the attached drawings.
First, as shown in
It is provided first electrode piece part-arrays 2A of a plurality of the electrode piece parts 3, on the first main face 1a of the ferroelectric crystal substrate 1. Spaces 4 are provided between the adjacent electrode piece parts 3, respectively, and spaces 8 and float electrodes 30 are provided between the adjacent electrode piece part-arrays 2A, respectively. Further, the respective arrays of the electrode piece parts are connected through a supply electrode 31. The period of the adjacent arrays of the electrode-piece parts is made L.
A voltage is then applied on the first arrays of the electrode piece parts to form first periodic polarization inversion structures 5A, as shown in
Then, as shown in
As a result, L is assigned to the period of the adjacent first periodic polarization inversion structures 5A on the first main face 1a, and L is also assigned to the period of the adjacent second polarization inversion structures 5B (
However, it is further found that the following problems are generated according to the embodiments described above.
That is, as shown in
The inventors further studied the cause of the damages 12 and obtained the following findings. That is, it is proved that the damages 12 are concentrated on the ends of the second periodic polarization inversion structures. It is considered that the breakdown occurs between the ends of the second electrode piece part-arrays and the ends of the first periodic polarization inversion structures formed under the second electrode-piece part-arrays.
Based on the speculation, the inventors tried to set the ends of the first periodic polarization inversion structures apart from the ends of the second electrode piece part-arrays, in the lengthwise direction of the second electrode piece part-arrays. It is thus found that the damages described above can be prevented. This embodiment will be described below.
That is, as shown in
The voltage is then applied on the first electrode piece part-arrays, to form the first periodic polarization inversion structures 5A as shown in
A plurality of the second electrode piece part-arrays 2C each composed of a plurality of the electrode piece parts 3 are then formed between the adjacent plural first periodic polarization inversion parts 5A. Here, the ends 5e of the first periodic polarization inversion structures 5A are set apart from the ends 2a of the second electrode piece part-arrays 2C, in the lengthwise direction P of the second electrode piece part-arrays 2C. At this state, the voltage is applied on the second electrode piece part-arrays 2C to form the second periodic polarization inversion structures 5C, as shown in
As a result, L is assigned to the period of the adjacent first periodic polarization inversion structures 5A, and the period of the adjacent second periodic polarization inversion structures 5C is also L on the main face 1a. However, the period S of the adjacent first periodic polarization inversion structures 5A and second polarization inversion structures 5C can be made considerably smaller than L. Moreover, the ends 5e of the first periodic polarization inversion structures are set apart from the ends 5f of the second periodic polarization inversion structures 5C, in the lengthwise direction P of the second periodic polarization inversion structures 5C. As a result, it is possible to prevent the damages 12 of the periodic polarization inversion structures due to the breakdown from the ends of the second electrode piece part-arrays toward the ends of the first periodic polarization inversion structures.
Further, in the case that the supply electrode is connected to these second electrode piece part-arrays 2C from the ends on left side not shown in
The shape of the electrode piece part is not particularly limited and may be a conventional comb-like electrode. According to a preferred embodiment, insulating electrodes are formed between the electrode piece parts, respectively, on the first main face of the ferroelectric crystal substrate, and an uniform electrode is formed on the second main face of the ferroelectric crystal substrate, and a voltage is applied between the electrode piece parts and uniform electrode.
First, a uniform conductive film is formed on the first main face 1a of the ferroelectric crystal substrate 1 and the conductive film is then patterned to form many lines of elongate conductive films 41, as shown in
As a result, the array of the electrode piece parts composed of many lines of elongate conductive films 41 are arranged so that the insulating film 42 is intervened between the adjacent electrode piece parts. The voltage is applied on the respective electrode piece parts from the common supply electrode 31.
A conductive film 40 is formed over the whole of the second main face 1b of the substrate 1.
The ferroelectric crystal of the substrate in which the periodic polarization inversion structures formed therein is not particularly limited. However, it includes lithium niobate (LiNbO3), lithium tantalate (LiTaO3), lithium niobate-lithium tantalate solid solution, K3Li2Nb5O15 and La3Ga5SiO14. The ferroelectric crystal may preferably be a single crystal.
As the ferroelectric crystal substrate, it is preferred an X-cut substrate, off-cut X-cut substrate, Y-cut substrate or off-cut Y-cut substrate. The off-cut angle may preferably be 10° or lower and more preferably be 5° or lower.
Although the material of the insulating film is not limited, the material may be an oxide such as silicon oxide (SiO2), tantalum pentoxide (Ta2O5), aluminum oxide (Al2O3), or a nitride such as silicon nitride. It is more preferred silicon oxide which is easy to be removed by etching by an agent after the polarization inversion.
Although the thickness of the patterned insulating film is not particularly limited, it may preferably be 500 angstroms or larger and 4000 angstroms or smaller. In the case that the thickness of the insulating film is small, the insulating property becomes lower so that it is difficult to form the polarization inversion. In the case that the insulating film is too large, the precision of patterning is deteriorated.
Although the material of the electrode piece part or counter electrode are not particularly limited, the material may preferably be Al, Au, Ag, Cr, Cu, Ni, Ni—Cr, Pd, Ta, Mo, W, Ta, a laminated film of AuCr and the like.
Although the method of forming the electrode piece part or counter electrode is not particularly limited, the method may be vapor deposition or sputtering method. The thickness of the electrode may be made 500 to 3000 angstroms, for example.
A voltage is then applied between the electrode piece parts and the counter electrodes to form the periodic polarization inversion structures in the substrate.
The temperature of the ferroelectric crystal substrate during the application of the voltage may preferably be 15° C. or higher and more preferably be 25° C. or higher, on the viewpoint of facilitating the formation of the periodic polarization inversion structures. Further, the temperature of the ferroelectric crystal substrate during the application of the voltage may preferably be 60° C. or lower and more preferably be 40° C. or lower, on the viewpoint of preventing cracks or pyroelectricity of the ferroelectric crystal substrate.
The ferroelectric crystal substrate may be provided in an atmosphere and may preferably be provided in insulating liquid. Such insulating liquid includes insulating oil (for example, silicone oil) and fluoride-based inert liquid.
The method of applying the voltage is not particularly limited. For example, the voltage may be applied while the substrate is provided in inert atmosphere or while the substrate is provided in the insulating liquid. In the case that the voltage is applied using a probe pin for applying the voltage, the pin may preferably be contacted at the central position.
The voltage may preferably be pulse voltage and direct current bias voltage may be further applied. Preferred conditions of the pulse voltage are as follows.
Pulse voltage: 2.0 kV˜8.0 kV (/mm)
Pulse width: 0.1 ms˜10 ms
Direct current bias voltage: 1.0 kV˜5.0 kV (/mm)
According to present invention, after the second electrode piece arrays are formed to form the second periodic polarization inversion structures, separate electrode piece part-arrays may be formed between the first periodic polarization inversion structures and the second polarization inversion structures and the voltage may be applied on the third electrode piece part-arrays to form third periodic polarization inversion structures. In this case, although the number of the application of the voltage is increased, instead the density of the periodic polarization inversion structures can be further increase instead. Further, the formation of the electrode piece part-arrays and application of the voltage may be repeated four times or more.
The period L of the adjacent electrode piece part-arrays during the voltage application may be selected depending on the material, and may preferably be 1.4 mm or lower and more preferably be 1.2 mm or lower, for example. Further, as the period L of the adjacent electrode piece part-arrays during the voltage application is too small, the influences of the short circuit may occur. The period may preferably be 0.4 mm or larger, more preferably be 0.6 mm or larger and most preferably be 0.7 mm or larger.
According to a preferred embodiment, the ends of the adjacent first periodic polarization inversion structures are set apart from ends of the electrode piece part-arrays, in the lengthwise direction of the second electrode piece part-arrays. In this case, a distance t (refer to
The inventive device may be applied to a higher-order harmonic wave generating device such as a second harmonic wave generating device. In the case that it is used as the second harmonic wave generating device, the wavelength of the higher-order harmonic wave may preferably be 330 to 1700 nm.
As shown in
Specifically, as the substrate 1, it was used an off-cut Y-cut substrate of LiNbO3 doped with MgO. The off-cut angle was 5°. Molybdenum film was formed as a conductive film on a first main face 1a of the substrate 1. Further, molybdenum film was formed as a conductive film 40 on a second main face 1b of the substrate 1 according to the similar procedure. The thickness of each of the conductive films was about 1000 angstroms.
A photoresist was then spin-coated on the conductive film on the main face 1a and subjected to exposure using a mask and developing to form resist pattern having a period of about 6.5 μm. The resist pattern was used as a mask to perform wet-etching treatment, to form patterned conductive films 41, as shown in
An insulating film 42 was then formed by sputtering. Its film thickness was made 2000 angstroms and material was made silicon oxide. However, as shown in
The thus produced substrate 1 was immersed in an insulating oil and pulse voltage was applied thereon at 25° C. As to the conditions of applying the voltage, the voltage was set at about 2.8 kV/mm and rectangular pulse of a width of 1 msec was applied.
After the application of the voltage, it was performed wet etching using 50% fluoric acid for confirming whether the polarization inversion took place. As a result, as shown in
The periodic polarization inversion structures were formed in the ferroelectric crystal substrate according to the procedure similar to that in the comparative example 1. However, the period S of the adjacent electrode piece part-arrays 2 was made as large as 0.6 mm to lower the density of the electrode piece part-arrays 2 to some extent.
As a result, as shown in
The periodic polarization inversion structures were formed according to the similar procedure as the comparative example 1. However, according to the present example, as shown in
As a result, as shown
The periodic polarization inversion structures were formed as the similar procedure as the inventive example 1. However, according to the present example, the period L of the first electrode piece part-arrays was made 1.2 mm, and the period S of the first periodic polarization inversion structures and second electrode piece part-arrays was made 0.6 mm. The density of the periodic polarization inversion structures was lowered at some extent.
As a result, it was successfully formed good first periodic polarization inversion structures and second polarization inversion structures each having a length of about 50 μm. Further, it could be successfully formed at a narrow interval. However, as shown in
The electrode piece arrays were formed as those in the inventive example 1 and it was tried to form the periodic polarization inversion structures. However, according to the present example, as shown in
As a result, as shown in
Number | Date | Country | Kind |
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2017-196739 | Oct 2017 | JP | national |
This application is a continuation application of PCT/JP2018/032190, filed Aug. 30, 2018, which claims priority to Japanese Application No. 2017-196739, filed Oct. 10, 2017, the entire contents all of which are incorporated hereby by reference.
Number | Date | Country | |
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Parent | PCT/JP2018/032190 | Aug 2018 | US |
Child | 16366292 | US |