Claims
- 1. A process for implanting a material for producing a region of charge carriers of one conductivity type into the surface of an intrinsic semiconductor substrate comprising the steps of:
- establishing a potential difference between said material and said substrate,
- heating said substrate by an electrical heating filament disposed beneath said substrate,
- moving said material into proximity to said substrate to draw a single continuous electrical arc therebetween to vaporize said material and to etch a region of the surface of said substrate, and
- maintaining said arc for a time sufficient to deposit an amount of the vaporized material into the etched region to form a semiconductor junction between said intrinsic semiconductor substrate and said region of charge carriers.
- 2. A process as in claim 1 wherein the heating of the substrate is to a temperature in the range of from about 200.degree.to 300.degree.C.
- 3. A process as in claim 1 further comprising the step of forming said material to be implanted into the shape of a wire.
- 4. A process as in claim 3 wherein the material to be implanted is formed of a metal alloy.
- 5. A process as in claim 3 wherein said alloy is gold-gallium.
- 6. A process as in claim 3 wherein said alloy is gold-antimony.
Government Interests
The invention described herein may be manufactured and used by or for the Government for governmental purposes without the payment of any royalties thereon or therefor.
US Referenced Citations (4)
Non-Patent Literature Citations (1)
Entry |
wentorf, Jr. et al., "Semiconducting Diamonds by Ion Bombardment" in Physl Review, 1 Mar. 1967; pp. A1614-A1616. |