Claims
- 1. A method of producing a zinc oxide thin film comprising passing a current between a conductive substrate immersed in an aqueous solution containing at least zinc ions, ammonium ions and a complex of zinc and ammonia ions, and an electrode as an anode immersed in the aqueous solution to form a zinc oxide thin film on the conductive substrate.
- 2. A method of producing a zinc oxide thin film according to claim 1, wherein the conductive substrate comprises a support and a transparent conductive layer deposited thereon.
- 3. A method of producing a zinc oxide thin film according to claim 1, wherein the hydrogen ion concentration of the aqueous solution is controlled in the range of pH 8 to pH 12.5.
- 4. A method of producing a zinc oxide thin film according to claim 1, wherein the hydrogen ion concentration of the aqueous solution near the uppermost surface in which the zinc oxide thin film is formed is controlled in the range of pH 6 to pH 8.
- 5. A method of producing a zinc oxide thin film according to claim 1, wherein the aqueous solution contains a hydrocarbon.
- 6. A method of producing a photovoltaic member comprising the steps of:forming zinc oxide thin film on a conductive substrate immersed in an aqueous solution containing at least zinc ions, ammonium ions and a complex of zinc and ammonia ions by passing a current between the conductive substrate and an electrode as an anode immersed in the aqueous solution; and forming a semiconductor layer.
- 7. A method of producing a photovoltaic member according to claim 6, wherein the conductive substrate comprises a support and a transparent conductive layer deposited thereon.
- 8. A method of producing a photovoltaic member according to claim 6, wherein the hydrogen ion concentration of the aqueous solution is controlled in the range of pH 8 to pH 12.5.
- 9. A method of producing a photovoltaic member according to claim 6, wherein the hydrogen ion concentration of the aqueous solution near the uppermost surface in which the zinc oxide thin film is formed is controlled in the range of pH 6 to pH 8.
- 10. A method of producing a photovoltaic member according to claim 6, wherein the aqueous solution contains a hydrocarbon.
- 11. A method of producing a semiconductor device substrate comprising passing a current between a conductive substrate immersed in an aqueous solution containing at least zinc ions, ammonium ions and a complex of zinc and ammonia ions, and an electrode as an anode immersed in the aqueous solution to form a zinc oxide thin film on the conductive substrate.
- 12. A method of producing a semiconductor device substrate according to claim 11, wherein the conductive substrate comprises a support and a transparent conductive layer deposited thereon.
- 13. A method of producing a semiconductor device substrate according to claim 11, wherein the hydrogen ion concentration of the aqueous solution is controlled in the range of pH 8 to pH 12.5.
- 14. A method of producing a semiconductor device substrate according to claim 11, wherein the hydrogen ion concentration of the aqueous solution near the uppermost surface in which the zinc oxide thin film is formed is controlled in the range of pH 6 to pH 8.
- 15. A method of producing a semiconductor device substrate according to claim 11, wherein the aqueous solution contains a hydrocarbon.
Priority Claims (1)
Number |
Date |
Country |
Kind |
9-121921 |
May 1997 |
JP |
|
Parent Case Info
This application is a Division of application Ser. No. 09/074,699, filed May 8, 1998, now U.S. Pat. No. 6,346,184 B1.
US Referenced Citations (1)
Number |
Name |
Date |
Kind |
5804466 |
Arao et al. |
Sep 1998 |
A |