Claims
- 1. A method of programming a memory cell with a substrate that comprises a first region and a second region with a channel therebetween and a gate above said channel, and a charge trapping region that contains a first amount of charge, the method comprising:applying a constant first voltage across said gate; applying a second constant voltage across said first region so as to generate a first charge injection region; and discontinuing applying said second constant voltage across said first region and simultaneously applying a third constant voltage across said first region so that a second charge injection region is generated that is larger than said first charge injection region.
- 2. The method of claim 1, further comprising reading different amounts of programmed charge read in a forward mode of programming.
- 3. The method of claim 1, further comprising applying a bias to said second region so that no charge is read at said second region.
- 4. The method of claim 1, wherein said second region is grounded.
- 5. The method of claim 1, wherein said memory cell comprises an EEPROM memory cell.
- 6. The method of claim 1, wherein said memory cell comprises a two bit memory cell.
- 7. The method of claim 5, wherein said memory cell comprises a two bit memory cell.
- 8. The method of claim 1, wherein said memory cell comprises: a P-type substrate;a dielectric layer that lies between said channel and said charge trapping region.
- 9. The method of claim 8, wherein said memory cell further comprises an electrical isolation layer located above said channel.
- 10. The method of claim 8, wherein said dielectric layer comprises silicon dioxide.
- 11. The method of claim 8, wherein said charge trapping layer comprises silicon nitride.
Parent Case Info
Applicant claims, under 35 U.S.C. § 119(e), the benefit of priority of the filing date of Aug. 25, 2000, of U.S. Provisional Patent Application No. 60/227,883, filed on the aforementioned date, the entire contents of which are incorporated herein by reference.
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Provisional Applications (1)
|
Number |
Date |
Country |
|
60/227883 |
Aug 2000 |
US |