Information
-
Patent Grant
-
6330741
-
Patent Number
6,330,741
-
Date Filed
Tuesday, October 5, 199925 years ago
-
Date Issued
Tuesday, December 18, 200123 years ago
-
Inventors
-
Original Assignees
-
Examiners
Agents
- Karasek; John J.
- Stockstill; Charles J.
-
CPC
-
US Classifications
Field of Search
US
- 029 600
- 333 182
- 333 206
- 333 207
-
International Classifications
-
Abstract
The technique of shrink fitting technique described herein is used to bond crystalline sapphire pieces to each other, in particular, the shrink fitting of a c-axis sapphire post to a c-axis sapphire puck. The sapphire dielectric resonator is used successfully from cryogenic temperatures to well above room temperature. The shrink fit bond yields a high strength and rigid attachment which can withstand high shock levels. Since there is no loss, the resonator Q is a maximum, being limited by the sapphire loss tangent only.
Description
BACKGROUND OF THE INVENTION
1. Field of the Invention
This disclosure is related to applications of very high Q cryogenic dielectric resonators at X-band to the development of ultra low phase noise phase noise sources for radar.
2. Description of the Related Art
X-hand dielectric resonators using low order TE
On
modes and higher order whispering gallery modes of a sapphire puck are being developed to work at temperatures ranging from room temperature to cryogenic temperatures. Because the loss tangent of sapphire varies as the fifth power of temperature, lowering the operating temperature to ˜77 K (liquid nitrogen) allows Q values of ˜10
6
(low order modes), and >10
7
(high order modes) to be realized. To realize the full Q potential at cryogenic temperatures, low loss puck support posts must contact the puck at the center of the flat faces. The resonant electric field amplitudes in and around the puck near the z axis are very small and a post aligned along the z axis will have minimal effect on resonant frequency and resonant Q.
One of our earlier spindle (post) mount sapphire resonators was made out of a single piece of c-axis sapphire. The solid sapphire-puck is contained within a metal cavity as shown in
FIGS. 1
a
and
1
b
and was designed for TE
02
operation at 10 Ghz. The measured Q of this resonator at 77 K was 0.6×10
6
, where we expected 1.0×10
6
. The Q degradation was due to a low quality finish of the flat faces of the puck. These faces could not be properly finished with the spindle in the way. For the next phase of the STALO program we ordered sapphire puck and separated post sets where all faces of the puck had a high quality finish. These pucks were dimensioned for higher order whispering gallery mode operation at X-band because the Q requirements (10
7
) of this phase of the program could not be satisfied with TE
On
modes.
BRIEF SUMMARY OF THE INVENTION
The object of this invention is to provide a technique of bonding crystalline sapphire pieces together.
The technique of shrink fitting technique described herein is used to bond crystalline sapphire pieces to each other, in particular, the shrink fitting of a c-axis sapphire post to a c-axis sapphire puck. The sapphire dielectric resonator is used successfully from cryogenic temperatures to well above room temperature. The shrink fit bond yields a high strength and rigid attachment which can withstand high shock levels. Since there is no loss, the resonator Q is a maximum, being limited by the sapphire loss tangent only.
BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1
a
shows TE
On
mode sapphire dielectric resonator one piece sapphire puck and post.
FIG. 1
b
shows TE
On
mode sapphire dielectric resonator in a copper enclosure.
FIG. 2
a
shows two pieces of the device put together at room temperature where the split block clamp is spaced off the puck.
FIG. 2
b
shows the puck and post installation where the collar is at a temperature of ˜200° C. where the hand held clamped sapphire post is at room temperature.
FIG. 2
c
shows two pieces of sapphire puck and tapered post put together, shrink fit sapphire puck and post where shrink fit is good for all temperatures.
FIG. 3
a
shows a side view of the split block clamp, sapphire post, and sapphire puck.
FIG. 3
b
shows a top view of the split block clamp.
FIG. 3
c
shows a side view of the brass block holding the puck on a hot plate.
FIG. 3
d
shows a top view of the brass block.
FIG. 4
a
shows a side view of a c-axis puck-c-axis post assembly.
FIG. 4
b
shows a top view of a c-axis puck-c-axis post assembly.
DETAILED DESCRIPTION OF THE INVENTION
The shrink fitting process is shown schematically in
FIGS. 2
a
,
2
b
and
2
c
. The tapered hole
12
is core drilled into the sapphire puck
14
after the puck
14
is polished to precise dimensions. The separately made tapered sapphire post
16
is then used to lap the tapered hole
12
to ensure a large contact area between the two pieces
14
and
16
.
FIG. 2
a
shows the two pieces put together at room temperature (assuming 22° C.) where the split block clamp
18
, Torlon 5030, made by the Polymer Corporation, is spaced off the puck
14
surface, by a predetermined amount, with a feeler gauge.
FIG. 2
b
shows the puck
14
heated top a temperature at ˜200° C. by a hot plate (not shown) while the hand held clamped sapphire post
16
is at room temperature. The post
16
is then quickly lowered into the hole
12
only as far as the clamp
18
allows and held down for about 10 seconds. At this point,
FIG. 2
c
, the hot plate (not shown) is turned off, the sapphires
14
and
16
are allowed to cool, and the clamp
18
is removed. The clamp
18
and sapphire puck
14
and post
16
are shown in more detail in
FIGS. 3
a
and
3
b
and the brass block
22
used to hold the puck on the hot plate
24
is shown in
FIG. 3
c
and
d.
A uniform sapphire post
16
and hole
12
diameter would have to be machined to an unattainable tolerance lever in order to limit the circumferential tensile stress in the bonded sapphire pieces
14
and
16
. Shrink fitting the tapered sapphire rod
16
into a tapered hole
12
relaxes diameter tolerances and converts the safe tensile stress range into a range of axial translations of the rod
16
. The axial translation is limited by the clamp
18
,
FIG. 2
a
. For example, we calculated that a 20 mil clamp
18
spacing leads to a circumferential stress in the sapphire puck
14
of less than 25 ksi. The sapphire vendor specifies the safe tensile stress range as 40 to 60 ksi. Using the tapered post
16
to lap the tapered hole
12
ensures a large contact area between the two pieces. This lapping process is not available when using uniform diameter posts
16
and holes
12
.
This process was used on seven puck-post
14
and
16
, respectively, sets where the clamp
18
space was varied between 10 and 20 mils. Good contact was achieved over more than 80% of the contact area (by optical inspection) for all seven of the sets. The puck-post
14
and
16
, respectively, sets were cycled between 20 K and 300 K with no adverse effect on resonator Q. The post
16
remains tight in the puck
14
and no chipping occurred. We calculate, for a post
16
diameter to puck
14
diameter ratio less than 0.15, the seventh order whispering gallery mode unloaded Q (Q
u
) to be 30×10
6
(F=11.1 Ghz, T=77 K). For the tapered post
16
and puck
14
shown in
FIGS. 4
a
and
4
b
the average post
16
diameter to puck
14
diameter is ˜0.14 and with a measured Q
u
=30×10
6
. A post/puck
14
and
16
, respectively, diameter ratio of <0.15 does not affect frequency or the spurious mode free window. The fact that measurements agree with calculations indicates that the bond stress is localized to the relatively unimportant (electrically) central region.
Other brittle materials, such as quartz, and diamond, may be bonded into a structure where the bond must withstand large temperature variations (˜0 K to near the melting point of the materials involved). Knowing the elastic properties and thermal expansion properties of the materials to be bonded allows for calculating safety margins and bond strength. If a metal is to be bonded to a brittle material then the temperature expansion coefficients must be well matched over the operating temperature range.
Shrink fitting sapphire to sapphire as described in this disclosure allowed our ultra high Q resonator to perform to its full potential and the use of tapered fitting parts led to an easy fabrication, 100% yield process.
Although the invention has been described in relation to an exemplary embodiment thereof, it will be understood by those skilled in the art that still other variations and modifications can be affected in the preferred embodiment without detracting from the scope and spirit of the invention as described in the claims.
Claims
- 1. A technique for shrink fitting a post mount sapphire resonator onto a single piece of c-axis sapphire comprising:a tapered post mount sapphire held at room temperature; a single piece c-axis sapphire puck at room temperature having a tapered hole of similar dimension of taper as that of the tapered post mount sapphire; predetermined diameter; a split block clamp placed around the tapered post mount to determine the amount said post is inserted into said puck; and said post at room temperature being inserted into the hole in said heated puck to the depth allowed by the clamp whereupon the post and puck temperatures are allowed to equalize.
- 2. A method of shrink fitting a post mount sapphire resonator onto a single piece of c-axis sapphire puck, comprising the steps of:tapering a post mount sapphire resonator to a predetermined taper; drilling a tapered hole in the single piece c-axis sapphire puck equal to the taper of the post mount sapphire resonator; placing a split block clamp placed around the tapered post mount sapphire to determine the depth said post may be inserted into the c-axis sapphire puck, said post and puck at room temperature; heating said puck to a predetermined temperature; inserting said tapered post mount sapphire at room temperature into the tapered hole in said heated c-axis sapphire puck to the depth allowed by the clamp; allowing the post and puck temperatures to equalize; and removing the clamp.
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Date |
Kind |
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Nishikawa et al. |
Jun 1981 |
|
4506241 |
Makimoto et al. |
Mar 1985 |
|
5500995 |
Palmieri et al. |
Mar 1996 |
|