Claims
- 1. A method for manufacturing a light-emitting diode comprising the steps of:forming a buffer layer over a substrate; forming an interfacial layer over the buffer layer, the interfacial layer including a dopant that has an affinity for oxygen bearing compounds, the interfacial layer formed from a material selected from the group consisting of GaN, GaP, and GaAs; forming an n-type layer directly on the interfacial layer; forming an active region over the n-type layer; forming a p-type layer over the active region; and depositing at least two metal contacts, wherein one of the metal contacts is connected to the n-type layer and the other of the metal contacts is connected to the p-type layer.
- 2. The method of claim 1, wherein the dopant has an ionic radius on the order of a radius of an atom being substituted.
- 3. The method of claim 1, wherein the dopant is selected from the group consisting of Mg, Zn, and Cd.
- 4. A method for manufacturing a light-emitting diode comprising the steps of:forming a buffer layer over a substrate; forming an interfacial layer over the buffer layer, the interfacial layer including a dopant that has an affinity for oxygen bearing compounds, the interfacial layer formed from a material selected from the group consisting of alloys of AlInGaN, AlInGaP, and AlInGaAs; forming an n-type layer over the interfacial layer; forming an active region over the n-type layer; forming a p-type layer over the active region; and depositing at least two metal contacts, wherein one of the metal contacts is connected to the n-type layer and the other of the metal contacts is connected to the p-type layer.
- 5. The method of claim 4, wherein the dopant has an ionic radius on the order of a radius of an atom being substituted.
- 6. The method of claim 4, wherein the dopant is selected from the group consisting of Mg, Zn, and Cd.
- 7. The method of claim 4, wherein the substrate is transparent.
- 8. The method of claim 4, wherein the n-type layer is formed directly on the interfacial layer.
- 9. A method for manufacturing a light-emitting diode comprising the steps of:forming a buffer layer over a transparent substrate; forming an interfacial layer over the buffer layer, the interfacial layer including a dopant that has an affinity for oxygen bearing compounds, the interfacial layer formed from a material selected from the group consisting of alloys of GaN, GaP, and GaAs; forming an n-type layer directly on the interfacial layer; forming an active region over the n-type layer; forming a p-type layer over the active region; and depositing at least two metal contacts, wherein one of the metal contacts is connected to the n-type layer and the other of the metal contacts is connected to the p-type layer.
- 10. The method of claim 9, wherein the dopant has an ionic radius on the order of a radius of an atom being substituted.
- 11. The method of claim 9, wherein the dopant is selected from the group consisting of Mg, Zn, and Cd.
CROSS-REFERENCE TO RELATED APPLICATION
This application is a division of U.S. application Ser. No. 09/092,478, filed Jun. 5, 1998, which is incorporated herein by reference now U.S. Pat. No. 6,194,742.
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