Method to fabricate tunneling magnetic recording heads with extended pinned layer

Abstract

A method of fabricating a magnetic device includes forming a sensor having a pinned layer and a free layer. A first reactive ion etch of a sensor stack patterns a hard mask layer with a photoresist image to form a first hard mask. Then a second reactive ion etch is performed to form an extended pinned layer. The method also includes depositing an insulating layer after the second reactive ion etch to protect exposed edges of the sensor stack, and then providing a chemical mechanical planarization (CMP) stop layer on the insulating layer. Subsequently, a CMP of the sensor stack is performed to remove a portion of the insulating layer. The resulting structure is substantially free of residue on the back edges of the sensor.

Description

BACKGROUND

Prior methods for fabricating an extended pinned layer are limited by an inadequate milling margin, possibly caused by the barrier layer thickness (approximately 10 angstroms), and the poor selectivity between the different materials in the TMR stack. In addition, use of a photoresist (PR) with ion beam milling may be responsible for producing free layer and bias residue on the back edge of the read head during definition of the sensor stripe. FIG. 1A illustrates a transmission electron microscope (TEM) image of a read sensor along an APEX direction. The TEM image of FIG. 1A shows a sensor stack that includes a barrier layer and a free layer (FL). In addition, a thick layer of FL residue is shown behind the sensor stripe. A different view of a read sensor along the ABS direction is illustrated in FIG. 1B. A TEM image of a different read sensor is shown in FIG. 1B along the ABS direction. A thick layer of bias residue is shown behind the sensor stripe of FIG. 1B produced using a prior process. The residue contamination shown in FIGS. 1A and 1B impairs the reliability and performance of conventionally-processed TMR heads. Therefore, a need exists for a process that overcomes the aforementioned limitations.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A is a TEM image of a magnetoresistive element in the APEX direction.

FIG. 1B is a TEM image of a magnetoresistive element in the ABS direction.

FIGS. 2A and 2B illustrate a TMR read head with an extended pin layer.

FIGS. 3A-3Z illustrate a sequence of structures produced according to one embodiment.

FIG. 4 illustrates a cross-sectional image of a structure formed according to another embodiment.

DETAILED DESCRIPTION

To address the stringent requirements of TMR magnetic recording head with areal density of 800 G/in² and beyond, extended pin layer (XPL) structures are disclosed. A method for forming the XPL structures is also disclosed. Although the method may be described in the context of a single recording transducer, it is understood that the method can be implemented in the fabrication of multiple transducers at substantially the same time. The transducers described herein contain a device region, in which the magnetoresistive structure is formed, and a field region distal from the magnetoresistive structure.

FIG. 2A illustrates an example of an intermediate structure formed in accordance with one embodiment of the invention. The structure is comprised of a stack of layers 307-311 on a seed layer 302. An antiferromagnetic (AFM) layer 308 is provided over the seed layer 302, followed by pinned layers P1 and P2 (collectively 307 or PL). A barrier layer 309 is deposited over the pinned layers PL 307. Subsequently, a free layer and capping layer 311 are placed over the barrier layer 309. An MR1 masking process defines a stripe height (SH) with back edge 130, and an extended pin layer 110 (XPL) having an upper surface 120. Residue tends to form on the back edge 130 and upper surface 120 of the XPL in prior processes. A bias material (not shown) is disposed within layers 307-311 of the sensor stack 300. FIG. 2B is a plan view of the mask layout for the structure of FIG. 2A where the bias material 342 is shown. After an etching process, SH may have a shorter length than the XPL as shown in both FIGS. 2A and 2B. The residue typically formed in prior processes is substantially eliminated in several embodiments of the present disclosure.

One embodiment of the new process will be explained in conjunction with FIG. 2A and FIGS. 3A-3Z. Some portions of the process are omitted in FIGS. 3A-3Z for clarity. FIGS. 3A, 3C, 3E, 3G, 3I, 3K, 3M, 3O, 3Q, 3S, 3U, 3W, 3X and 3Z are plan views of intermediate structures formed during one embodiment of the new process. FIGS. 3B, 3D, 3F, 3H, 3J, 3L, 3N, 3P, 3R, 3T, 3V, 3X and 3Z illustrate two cross-sectional views of the associated plan views of FIGS. 3A, 3C, 3E, 3G, 3I, 3K, 3M, 3O, 3Q, 3S, 3U, 3W, 3X and 3Z. For example, the top drawing of FIG. 3D illustrates the APEX view of FIG. 3C; while the bottom drawing of FIG. 3D illustrates the ABS view of FIG. 3C. The top drawing in FIGS. 3B, 3D, 3F, 3H, 3J, 3L, 3N, 3P, 3R, 3T, 3V, 3X and 3Z corresponds to an APEX view of their respective plan views. In addition, the bottom drawing of FIGS. 3B, 3D, 3F, 3H, 3J, 3L, 3N, 3P, 3R, 3T, 3V, 3X and 3Z corresponds to the ABS view of their respective plan views in FIGS. 3A, 3C, 3E, 3G, 3I, 3K, 3M, 3O, 3Q, 3S, 3U, 3W, 3X and 3Z.

FIG. 3A illustrates upper layers 311 of sensor stack 300. The cross-sectional view of the FIG. 3A structure is shown in FIG. 3B, which is a pre-patterned magnetoresistive structure. Sensor stack 300 includes a bottom shield (shield 305), pinned layers 307 and anti-ferromagnetic layer (AFM) 308, barrier layer (BL 309) and upper layers 311. The upper layers 311 comprise a free layer (FL) and a capping layer (CL). A photoresist 320 is deposited and then patterned to form the structure as shown in FIG. 3C. Cross-sectional views of FIG. 3C are shown in FIG. 3D. In the ABS view of FIG. 3D, lateral openings 315 are present. Next, the underlying sensor layers 307-311 are etched using the patterned PR 320 as a mask to extend lateral openings 315 down to the upper surface of shield 305. Afterwards, a side gap layer (not shown) is deposited to line the lateral openings 315 to protect sensor stack 300 from shorting subsequently deposited material. Side gap layer may be a low dielectric constant insulating material such as silicon nitride (SiNx), hydrogenated silicon nitride, silicon oxynitride (SiOxNy), hydrogenated silicon oxynitride, or silicon oxide (SiOx). Then, bias material 342 is deposited into openings 315 to form the structures of FIGS. 3E and 3F. Bias material 342 may be either a hard bias or soft bias material. For simplicity, the embodiments described herein will refer to bias material 342 as a soft bias (or SB) with the understanding that bias material 342 is not limited to the use of solely soft bias materials. Soft bias material 342 comprises a permanent magnetic material. The permanent magnetic nature of the soft bias material 342 may generate a soft bias field pointing in a direction substantially parallel to the planes of the sensor layers 307-311 to bias the magnetization of the free layer 311. Although the permanent magnetic material comprises a nickel iron (NiFe) alloy in the illustrated embodiment of FIG. 3F, other permanent magnetic materials such as an alloy of cobalt, platinum, and chrome (CoPtCr) or an alloy of iron and platinum (FePt) may be alternatively used.

The bias field generated by the soft bias material 342 passes through and sets up a sufficiently effective bias field inside the patterned sensor stack 300 that is perpendicular to the stack layers. The effective bias field in turn affects transfer characteristics (e.g., TMR ratio versus an external magnetic field) of the sensor stack 300 by affecting the behavior of the free layer magnetization.

After providing the SB material adjacent to shield 305, a hard mask layer 325 is deposited over sensor stack 300 of FIG. 3F to produce the structure illustrated in FIG. 3G. In one embodiment, hard mask layer 325 may be tantalum. In other embodiments, hard mask layer 325 may be selected from titanium, titanium nitride, alumina, tantalum oxide, or silicon dioxide. A photoresist mask 377 is placed over the hard mask layer 325 in FIG. 3I to enable the PR pattern to be reproduced on hard mask layer 325. A first reactive ion etch (RIE) (etch selectivity of Ta:Ru˜1:10 and Ta:NiFe˜1:20) is performed using a halogenated-based chemistry. The first RIE stops at the sensor top surface 329 and at the soft bias surface 327. The photoresist is removed leaving hard mask (HM) 330 as shown in FIGS. 3K and 3L.

At this point, a masking process (MR1) may be performed to begin patterning the sensor stack 300. MR1 defines a stripe height (SH) of the magnetoresistive sensor and a back edge 130, the locations of which are labeled in FIG. 2A. A second RIE process is performed to form the structures of FIGS. 3M and 3N. The second RIE process may use a methanol-based chemistry. During the second RIE, the FL 311 is etched at an angle. Etching may be stopped, in certain embodiments, at the barrier layer 309, to be further defined with subsequent etching as described below. The barrier layer 309 is a layer through which charge carriers may tunnel. For example, the barrier layer 309 may be an insulator and/or may selectively allow tunneling of charge carriers based upon the spin state of the charge carriers. In some embodiments, the barrier layer 309 includes MgO. For example, the barrier layer 309 may be MgO or MgOX, where X is a nonmagnetic material. However, in other embodiments, a small amount of the barrier layer 309 may be removed as shown in the APEX view of FIG. 3N. In the field region, the second RIE is stopped at the bias seed layer (not shown) adjacent to bias material 342 in FIG. 3N. In some embodiments, the second RIE defines the FL back edge 130 without FL residue remaining, while completely, or nearly completely, removing the bias material 342 in the back edge 130 behind the sensor stripe. In one embodiment, bias material 342 may be NiFe and HM 330 may be tantalum. A Ta hard mask has an etch selectivity to the barrier layer 309 that is at least 1:M, where M≧1.5, and an etch selectivity to the bias material 342 that is at least 1:N, where N≧10. In one embodiment, a Ta hard mask has an etch selectivity to the free layer of 1:10, while FL 311 has an etch selectivity to the barrier layer of at least K:1, where K≧5.

The process continues by providing an insulating layer 345 contiguous to SB material 342 as shown in the ABS view of FIG. 3P. The insulating layer may be selected from SiO2, Al2O3 or any other insulating material 345 known to have a high dielectric constant. A CMP stop layer (stop layer 375) is also provided over the sensor stack 300 to produce the structure of FIGS. 3O and 3P. In some embodiments, the stop layer 375 may have a thickness ranging from 10-70 angstroms. After removing the stop layer 375, residue may be observed on the back edge 130 of the XPL and sensor stripe. If residue is observed, then the manufacturing process can be modified to use a thicker stop layer 375, for example, by increasing the thickness by two-five angstroms until FL and SB residue is substantially eliminated.

The stop layer 375 may be selected from tantalum, ruthenium, or a combination of tantalum and ruthenium layers. A high angle milling process is performed to remove the stop layer 375 on the sidewall, thereby exposing insulating layer 345. In one embodiment, insulating layer 345 comprises Al2O3 or alumina. A relatively aggressive CMP is then performed portions of layers 345 and 375 above HM 330. CMP is terminated upon reaching HM 330. During the aggressive CMP, a polishing slurry penetrates into the top alumina 345 to facilitate lift off of stop layer 375 in the device region where sensor stack 300 resides. A portion of the alumina 375 is also removed from the device region. Stop layer 375 in field region remains over alumina 345 as shown in FIG. 3R. The aggressive CMP is conducted with a force of approximately 3-4 psi for 20-40 seconds at a speed of approximately 35-65 rpm.

Then the stop layer 375 can be subjected to a third RIE process to remove stop layer 375 from the sensor, resulting in the structure of FIGS. 3S and 3T. The third RIE may be performed with a fluorinated-based chemistry. A second photolithography process (MR2) is performed in FIGS. 3U and 3V to transfer the pattern from the photoresist mask 382 to the sensor stack 300.

Milling is then performed to remove a portion of the pinned layer and metal, to thereby reduce the possibility of electrical short circuits. The result of milling is the structure of FIGS. 3W and 3X. The PR mask 382 is typically removed by a rinsing process called “lift-off” that uses a chemical solution to dissolve the mask 382 and release it from the top surface 329 of sensor stack 330. Once the mask 382 has been removed, the TMR device is completed by covering the stop layer 375 with a seed layer (not shown), and then covering the seed layer with a top shield (shield 395) as shown in FIGS. 3Y and 3Z. Shield 395 is provided on stack 300 in a conventional manner to produce the structures of FIGS. 3Y and 3Z.

The advantages of performing one embodiment of the process of FIGS. 3A-3Z can be seen from FIG. 4. FIG. 4 illustrates the structure of FIG. 3P as an APEX view after the second RIE and Al2O3 refill. The sensor stack 300 is shown with bottom shield 305, layers 307-311 and SB material 342. Al2O3 (345) appears adjacent to SB material 342 and XPL 307. Above sensor stack 300 is a tri-layer structure that includes a HM, insulating material 345, and the stop layer 375. The read sensor of FIG. 4 includes XPL 307 which has an upper surface 120. As a result of performing the process of FIGS. 3A-3P, upper surface 120 is formed without any SB residue and FL residue in at least one embodiment.

The new processes disclosed for defining a sensor stripe is novel. In certain embodiments, the novel process can provide sensors with good BQST feedback. Moreover, in certain embodiments, the SB read heads contain an XPL 307 that is free, or substantially free, of both FL and SB residues. Yet in other embodiments, the new process may improve the SB read head performance and/or reliability.

The process of the present disclosure uses a hard mask and reactive ion etching (RIE) to pattern a sensor stripe. Reactive ion etching (RIE) also etches the pinned layer to form an extended pinned layer. Then a CMP is performed to remove residue from the sensor, thereby producing the structure shown in FIG. 4.

The above detailed description is provided to enable any person skilled in the art to practice the various embodiments described herein. While several embodiments have been particularly described with reference to the various figures, it should be understood that these are for illustration purposes only and should not be taken as limiting the scope of the claims.

Various modifications to these embodiments will be readily apparent to those skilled in the art, and generic principles defined herein may be applied to other embodiments. Thus, many changes and modifications may be made to the disclosure, by one having ordinary skill in the art, without departing from the spirit and scope of the claims.

Claims

1. A method for fabricating a magnetic device comprising: forming a sensor stack that includes a pinned layer, wherein the sensor stack has a free layer;performing a first reactive ion etch to pattern a hard mask layer on the sensor stack with a photoresist image to thereby form a hard mask;performing a second reactive ion etch to form an extended pinned layer;depositing an insulating layer after the second reactive ion etch to protect exposed edges of the sensor stack;providing a stop layer on the insulating layer; andperforming a CMP of the sensor stack to remove a portion of the insulating layer.

2. The method of claim 1, wherein a third reactive ion etch of the sensor stack is performed to remove the stop layer.

3. The method of claim 1, wherein the hard mask is formed of a material selected from the group consisting of tantalum, titanium, titanium nitride, alumina, tantalum oxide, or silicon dioxide.

4. The method of claim 1, wherein the CMP of the sensor stack is performed at a pressure of approximately 3-4 psi.

5. The method of claim 1, further comprising depositing a barrier layer on the sensor stack prior to depositing an insulating layer.

6. The method of claim 5, wherein a bias material is deposited on the sensor stack before the hard mask is formed.

7. The method of claim 5, wherein the second reactive ion etching stops at the bias material and near an upper surface of the barrier layer.

8. The method of claim 7, wherein an etch selectivity of the hard mask to the barrier layer is at least 1:M, where M≧1.5, and an etch selectivity of the hard mask to the bias material is at least 1:N, where N≧20.

9. The method of claim 1, wherein the free layer has an etch selectivity to the barrier layer of at least K:1, where K≧5.

10. The method of claim 9, wherein the bias material may be either a soft or hard bias material.

11. The method of claim 1, wherein the hard mask has an etch selectivity to the free layer of 1:10.