Methods and apparatus for magnetic sensor having integrated coil

Information

  • Patent Grant
  • 11680996
  • Patent Number
    11,680,996
  • Date Filed
    Wednesday, September 20, 2017
    6 years ago
  • Date Issued
    Tuesday, June 20, 2023
    11 months ago
Abstract
Methods and apparatus for a magnetic sensor having a die and sensor circuitry formed in a device layer of the die with a coil integrated with the die to generate a magnetic field. A magnetoresistive magnetic field sensing element on the die detects changes in the magnetic field generated by the coil as a result of the presence of a ferromagnetic target. The sensor circuitry may process the changes in the magnetic field generated by the coil.
Description
BACKGROUND OF THE INVENTION

As is known, there are a variety of types of magnetic field sensing elements, including, but not limited to, Hall effect elements, magnetoresistance elements, and magnetotransistors. As is also known, there are different types of Hall effect elements, for example, planar Hall elements, vertical Hall elements, and circular vertical Hall (CVH) elements. As is also known, there are different types of magnetoresistance elements, for example, anisotropic magnetoresistance (AMR) elements, giant magnetoresistance (GMR) elements, tunneling magnetoresistance (TMR) elements, Indium antimonide (InSb) elements, and magnetic tunnel junction (MTJ) elements.


Hall effect elements generate an output voltage proportional to a magnetic field. In contrast, magnetoresistance elements change resistance in proportion to a magnetic field. In a circuit, an electrical current can be directed through the magnetoresistance element, thereby generating a voltage output signal proportional to the magnetic field.


Magnetic field sensors, which use magnetic field sensing elements, are used in a variety of devices including current sensors that sense a magnetic field generated by a current carried by a current-carrying conductor, magnetic switches (also referred to herein as a proximity detector) that sense the proximity of a ferromagnetic or magnetic object, rotation detectors that sense passing ferromagnetic articles, for example, gear teeth, and magnetic field sensors that sense magnetic field or magnetic flux densities of a magnetic field.


SUMMARY OF THE INVENTION

Exemplary embodiments of the present invention provide methods and apparatus for magnetic sensor having an integrated coil and sensing element to detect changes in a magnetic field generated by the excited coil due to the movement of a target, such as a ferrous gear tooth. In one embodiment, the sensing element comprises a giant magnetoresistance (GMR) element, which has more sensitivity to magnetic field changes than a comparable Hall element.


In one aspect of the invention, a magnetic field sensor comprises a die, a coil proximate the die to generate a magnetic field, and a magnetic field sensing element on the die to detect changes in the magnetic field generated by the coil as a result of the presence of a ferromagnetic target.


The sensor can further include one or more of the following features: the coil is integrated in or on the die, the coil is substantially flat, only a portion of the magnetic field sensing element overlaps with the coil, the magnetic field sensing element is positioned at least in part between the coil and the die, the coil is positioned at least in part between the magnetic field sensing element and the die, the magnetic field sensing element comprises a giant magnetoresistance element, about half of an area of the magnetic field sensing element overlaps with the coil, about half of a length of the magnetic field sensing element overlaps with the coil, the magnetic field sensing element comprises a Hall element and a further magnetic field sensing element comprises a giant magnetoresistance element, the die includes circuitry to process information from the magnetic field sensor, a constant current source coupled to the coil, and/or the magnetic field sensing element has at least a portion that overlaps the coil.


In another aspect of the invention, a magnetic field sensor comprises a die, a first means proximate the die for generating a magnetic field, and a second means for detecting changes in the magnetic field generated by the first means as a result of the presence of a ferromagnetic target.


The sensor can further include the first means being integrated in or on the die, the first means comprising a giant magnetoresistance element, and/or the first means further comprising a Hall element.


In a further aspect of the invention, a method comprises providing a die, providing a coil proximate the die to generate a magnetic field, and providing a magnetic field sensing element to detect changes in the magnetic field generated by the coil as a result of the presence of a ferromagnetic target.


The method can further include one or more of the following features: the coil is integrated in or on the die, the magnetic field sensing element is positioned at least in part between the coil and the die, the coil is positioned at least in part between the magnetic field sensing element and the die, and/or the magnetic field sensing element comprises a giant magnetoresistance element and a Hall element.





BRIEF DESCRIPTION OF THE DRAWINGS

The foregoing features of the invention, as well as the invention itself may be more fully understood from the following detailed description of the drawings, in which:



FIG. 1 is a top view of a magnetic sensor having an integrated coil in accordance with exemplary embodiments of the invention;



FIG. 1A is a cutaway side view of the sensor of FIG. 1;



FIG. 2 is cutaway side view of another embodiment of a magnetic sensor in accordance with exemplary embodiments of the invention;



FIG. 3 is a cutaway side view of a further embodiment of a magnetic sensor in accordance with exemplary embodiments of the invention;



FIG. 3A is a top view of the magnetic sensor of FIG. 3;



FIG. 4 is a cutaway side view of another embodiment of a magnetic sensor in accordance with exemplary embodiments of the invention;



FIG. 5 is a cutaway side view of a further embodiment of a magnetic sensor in accordance with exemplary embodiments of the invention; and



FIG. 5A is a cutaway side view of a still further embodiment of a magnetic sensor in accordance with exemplary embodiments of the invention.





DETAILED DESCRIPTION OF THE INVENTION

Before describing the present invention, some information is provided. As used herein, the term “magnetic field sensing element” is used to describe a variety of types of electronic elements that can sense a magnetic field. The magnetic field sensing elements can be, but are not limited to, Hall effect elements, magnetoresistance elements, or magnetotransistors. As is known, there are different types of Hall effect elements, for example, planar Hall elements, vertical Hall elements, and circular vertical Hall (CVH) elements. As is also known, there are different types of magnetoresistance elements, for example, anisotropic magnetoresistance (AMR) elements, giant magnetoresistance (GMR) elements, tunneling magnetoresistance (TMR) elements, Indium Antimonide (InSb) elements, and magnetic tunnel junction (MTJ) elements.


Some of the above-described magnetic field sensing elements tend to have an axis of maximum sensitivity parallel to a substrate that supports the magnetic field sensing element, and others of the above-described magnetic field sensing elements tend to have an axis of maximum sensitivity perpendicular to a substrate that supports the magnetic field sensing element. In particular, metal based types of magnetoresistance elements, vertical Hall elements, and CVH elements tend to have axes of maximum sensitivity parallel to the substrate and some types of Hall elements and some semiconductor magnetoresistance sensors tend to have axes of sensitivity perpendicular to the plane substrate (i.e., sensitive through the thickness of the die).


As used herein, the term “magnetic field sensor” is used to describe a circuit that includes a magnetic field sensing element. Magnetic field sensors are used in a variety of applications, including, but not limited to, a current sensor that senses a magnetic field generated by a current carried by a current-carrying conductor, a magnetic switch (also referred to herein as a proximity detector) that senses the proximity of a ferromagnetic or magnetic object, a rotation detector that senses passing ferromagnetic articles, for example, gear teeth, and a magnetic field sensor (e.g., a linear magnetic field sensor) that senses a magnetic field density of a magnetic field. As used herein, the term “magnetic field signal” is used to describe any circuit signal that results from a magnetic field experienced by a magnetic field sensing element.


In general, exemplary embodiments of the invention provide a magnetic sensor having a coil integrated with a die containing sensor circuitry and a magnetic sensing element, such as a GMR element. In other embodiments, such as magnetoresistance sensor embodiments, can utilize a substrate, which may be an insulator without other circuitry. The coil and the sensor circuitry cooperate to detect changes in a magnetic field resulting from a moving ferrous target, for example. As the coil is excited by a current, a magnetic field is generated. Disturbances to the magnetic field caused by a passing ferromagnetic object, either a soft or hard ferromagnetic material, can be detected for sensing applications. Exemplary applications include sensing of speed, direction, and position sensing, including but not limited to seat position, or buckle presence position sensor applications.



FIGS. 1 and 1A show an exemplary magnetic sensor 100 having an integrated coil 102 and a die 104 containing sensor circuitry. A sensor element 106, such as a GMR element, is located proximate the coil 102. A moving target 10, such as a ferrous gear tooth, causes changes in the magnetic field generated by the coil 102 that can be detected by the GMR element 106. Output from the GMR element 106 can be processed by the sensor circuitry in a device layer 108 of the die 104, for example, to provide an output signal for the sensor 100. More particularly, the output of the GMR 106 can be used to determine the relative position of the ferrous target 10 or extraneous magnetic field. The GMR output can be also be used to determine if the ferrous target 10 or extraneous magnetic field is moving past the coils, as well as the speed and direction of the ferrous target or extraneous magnetic field. Circuitry in the device layer to process information from the sensor element is well known in the art.


In the illustrated embodiment of FIGS. 1 and 1A, the position of the sensing element 106 is aligned with one ‘side’ of the coil 102. That is, the sensing element is aligned with a portion of the coil 102 in which current is flowing the same direction with respect to one side of a rectangular die to the opposite side. In the illustrated embodiment, the current in the coils above the sensing element 106 flows out of (FIG. 1A) the page and current in the coils not above the sensing element flows into the page.



FIG. 2 shows an exemplary magnetic sensor 100′ having a coil 102′ disposed between the die 104′ and the GMR element 106′. With this arrangement, the coils can be fabricated with a standard IC process and then integrated with the GMR in a separate process. In exemplary embodiments, one or more CMP (chemical mechanical polishing) processing steps can occur prior to GMR deposition.


In one embodiment, a GMR sensor element 106′ is used. It is understood that, in general, a GMR element is more sensitive to magnetic field changes than a Hall element. Since a GMR element is much more sensitive than a Hall element, the coil size and current required for a given application can be reduced when compared to a Hall implementation. It is understood that a variety of sensing elements can be used to meet the needs of a particular application. Exemplary sensing elements include a Hall element, AMR, GMR, and MTJ elements.



FIGS. 3 and 3A show an exemplary embodiment of a magnetic sensor 200 having a sensing element 202 between a coil 204 and a die 206, where about half of the magnetic sensing element 202 overlaps with the coil 202 and about half does not overlap. It is understood that insulation layers (not shown for ease of understanding) can be placed between the coil and underlying sensor material and/or substrate as required by sensor and substrate material selection so as not to short circuit the materials and coil. As a ferrous target 10, such as a gear tooth, approaches and/or retreats, rotates, etc., the vector of the magnetic field aligns about perpendicularly to the sensing element 202 and thus, increases the observed magnetic field. This may be true even though the absolute magnetic field value does not change by a large magnitude above the noise of the system if generated in the coil by a constant current source. With this arrangement, the magnetic field of the coil 204 becomes more or less aligned to the axis of sensitivity of the sensing element/magnetic field transducer 202. That is, there is the flux vector and the sensitivity of the transducer element. If perpendicular to the axis of sensitivity, in theory, a field cannot be detected—even if it is very large. Thus, proper positioning allows the transducer to take advantage and exaggerate the measured field by using the fact the magnetic field vector is moving and the sensitivity can increase or decrease even if the absolute value of the field is relatively constant



FIG. 4 shows another embodiment of a magnetic sensor 300 having a sensing element 302, coil 304, and a die 306, where the sensing element 302 is generally centered in the coil 304. Changes in the magnetic field reflect the change in reluctance of the flux path near the coil 304 as the target tooth 10 approaches and retreats in relation to the coil.



FIG. 5 shows an exemplary embodiment of a magnetic sensor 400 having first and second sensing elements 402, 403, proximate a coil 404 and a die 406. In one embodiment, the first sensing element includes a Hall element 403 and the second sensing element includes a GMR element 402. The Hall element 402 is optimized for close air-gap measurements and the GMR element 403 is optimized for far air-gap measurements. With this arrangement, outputs from the Hall element 402 and the GMR element 403 can be processed together or independently.



FIG. 5A shows an exemplary embodiment in which the first and second sensing elements 402, 403 are located in ‘series’ aligned with the coil along a path of the current flowing through the coil.


In one embodiment, the coil(s) can be selectively energized with a current to achieve a desired magnetic field. For example, the coil may be energized for the time when a target may be in proximity to the sensor.


It is understood that the particular size and geometry of the components, coils etc., can vary to meet the needs of a particular application. In exemplary embodiments, coils may range from 10 um spaces and traces to ID (inner diameter) of 500 um to approximately 200 um and OD (outer diameter) from about 60 um (for one turn) to about 500 um. Larger ODs are possible to 750 um, for example, depending on the application. It is further understood that the coil can be generally square, circular, ovular, etc.


In general, spacing from the coil to the sensing element can vary, in part as a result of voltage isolation requirements. An exemplary spacing ranges from about 0.1 um to about 10.0 um, and more typically, between 0.3 and 3.0 um. Coil currents may range from about 1 to about 100 mA, for example, but more typically from about 5 to about 50 mA. For example, if the coil current is modulated, larger bursts or pulses of coil current can be used to determine if the target/ferrous object to be sensed is in a far air-gap condition, e.g., more than about 3 mm. A magnetic field is typically sensed at about 0.5 mm to about 3 mm airgap.


By adjusting the current in the coil based on the target location, the device uses less power. Less power is used for closer airgaps and more power for farther airgaps. Coil current can be pulsed or adjusted based on the signal received from the magnetic field sensor to use less power over time.


In exemplary embodiments, the coil is formed using conventional deposition and or etching processes well known to one of ordinary skill in the art. It is understood that the coil can have any practical shape, as seen in a top view, such as square, rectangular, circular, ovular, etc. It is also understood that insulation layers may be placed between the coils and the sensors and/or substrate to prevent shorting of the coil to other electrical layers in the system.


The coils shown in the figures generally are shown with a planar spiral type of geometry and of a single layer. It is understood that multiple metal layers of the coils can be used as well as other geometries of metal, for example solenoid type coils. It is further understood that alternative embodiments can include a flux concentrator, which can comprise a soft magnetic material, to improve the magnetic flux generated by the coil.


It is understood that exemplary embodiments of a magnetic sensor having an integrate coil are applicable to a wide variety of applications. For example, in one embodiment, a magnetic sensor with an integrated coil is optimized for seat belt detection. In another embodiment, a magnetic sensor is optimized for seat position detection with air gaps in the order of about 0.5 to about 3 mm.


Having described preferred embodiments, which serve to illustrate various concepts, structures and techniques, which are the subject of this patent, it will now become apparent to those of ordinary skill in the art that other embodiments incorporating these concepts, structures and techniques may be used. Accordingly, it is submitted that that scope of the patent should not be limited to the described embodiments but rather should be limited only by the spirit and scope of the following claims. All references cited herein are hereby incorporated herein by reference in their entirety.

Claims
  • 1. A magnetic sensor integrated circuit (IC) package, comprising: a die;sensor circuitry formed in a device layer of the die to generate an output signal for the sensor IC package;an integrated coil to generate a magnetic field; and a magnetoresistive magnetic field sensing element on the die to detect changes in the magnetic field generated by the coil as a result of the presence of a ferromagnetic target,wherein the sensor circuitry is configured to process the changes in the magnetic field generated by the coil, wherein the magnetoresistive magnetic field sensing element generates an output signal corresponding the detected changes in the magnetic field generated by the coil, and wherein the sensor circuitry is configured to receive the output signal from the magnetoresistive magnetic field sensing element and to process the output signal from the magnetoresistive magnetic field sensing element for generating the output signal for the sensor IC package,wherein the sensor circuitry is configured to use less power for closer airgaps and more power for larger airgaps.
  • 2. The sensor according to claim 1, wherein the magnetoresistive magnetic field sensing element comprises a GMR (giant magnetoresistive) element.
  • 3. The sensor according to claim 1, further including a constant current source coupled to the coil such that alignment changes of the magnetic field generated by the coil with respect to the magnetic sensing element caused by movement of the target are detected by the magnetic field sensing element.
  • 4. The sensor according to claim 1, wherein the movement of the ferromagnetic target to a first position causes a vector of the magnetic field generated by the coil to align substantially perpendicularly to the magnetic field sensing element which increases the magnetic field observed by the magnetic field sensing element, and further movement of the ferromagnetic target to a second position changes the magnetic field observed by the magnetic field sensing element.
  • 5. The sensor according to claim 1, wherein coil spaces are at least 10 μm.
  • 6. The sensor according to claim 1, wherein traces for the coil range from an inner diameter of about 50 μm to about 200 μm.
  • 7. The sensor according to claim 6, wherein the traces for the coil range from an outer diameter of about 60 μm to about 500 μm.
  • 8. The sensor according to claim 1, wherein the IC package is configured for an airgap with the target ranging from about 0.5 mm to about 3 mm.
  • 9. The sensor according to claim 1, wherein current through the coil ranges from about 5 μA to about 50 μA.
  • 10. The sensor according to claim 1, wherein the coil is substantially flat.
  • 11. The sensor according to claim 1, wherein the only a portion of the magnetic field sensing element overlaps with the coil.
  • 12. The sensor according to claim 1, wherein the magnetic field sensing element is positioned at least in part between the coil and the die.
  • 13. The sensor according to claim 1, wherein about half of an area of the magnetic field sensing element overlaps with the coil.
  • 14. The sensor according to claim 1, wherein about half of a length of the magnetic field sensing element overlaps with the coil.
  • 15. The sensor according to claim 1, wherein sensor includes a further magnetic field sensing element.
  • 16. The sensor according to claim 1, wherein the magnetic field sensing element has at least a portion that overlaps the coil.
  • 17. The sensor according to claim 1, wherein the sensor adjusts current in the coil based on the target location.
  • 18. The sensor according to claim 17, wherein the current in the coil is less for closer air gaps than farther air gaps.
  • 19. The sensor according to claim 1, wherein the coils are integrated with the magnetic field sensing element.
CROSS REFERENCE TO RELATED APPLICATIONS

This application is a CONTINUATION application of U.S. patent application Ser. No. 13/468,478, filed May 10, 2012, which is incorporated here by reference in its entirety.

US Referenced Citations (377)
Number Name Date Kind
3132337 Martin May 1964 A
3195043 Burig et al. Jul 1965 A
3281628 Bauer et al. Oct 1966 A
3359495 McMaster et al. Dec 1967 A
3607528 Gassaway Sep 1971 A
3611138 Winebrener Oct 1971 A
3661061 Tokarz May 1972 A
3728786 Lucas et al. Apr 1973 A
4048670 Eysermans Sep 1977 A
4180753 Cook, II Dec 1979 A
4188605 Stout Feb 1980 A
4204317 Winn May 1980 A
4236832 Komatsu et al. Dec 1980 A
4283643 Levin Aug 1981 A
4315523 Mahawili et al. Feb 1982 A
4438347 Gehring Mar 1984 A
4573258 Io et al. Mar 1986 A
4614111 Wolff Sep 1986 A
4649796 Schmidt Mar 1987 A
4670715 Fuzzell Jun 1987 A
4719419 Dawley Jan 1988 A
4733455 Nakamura et al. Mar 1988 A
4745363 Carr et al. May 1988 A
4746859 Malik May 1988 A
4752733 Petr et al. Jun 1988 A
4758943 Aström et al. Jul 1988 A
4760285 Nelson Jul 1988 A
4764767 Ichikawa et al. Aug 1988 A
4769344 Sakai et al. Sep 1988 A
4772929 Manchester Sep 1988 A
4789826 Willett Dec 1988 A
4796354 Yokoyama et al. Jan 1989 A
4823075 Alley Apr 1989 A
4833406 Foster May 1989 A
4893027 Kammerer et al. Jan 1990 A
4908685 Shibasaki et al. Mar 1990 A
4910861 Dohogne Mar 1990 A
4935698 Kawaji et al. Jun 1990 A
4944028 Iijima et al. Jul 1990 A
4954777 Klopfer et al. Sep 1990 A
4970411 Halg et al. Nov 1990 A
4983916 Iijima et al. Jan 1991 A
4991447 Yahagi et al. Feb 1991 A
5012322 Guillotte Apr 1991 A
5021493 Sandstrom Jun 1991 A
5028868 Murata et al. Jul 1991 A
5045920 Vig et al. Sep 1991 A
5078944 Yoshino Jan 1992 A
5084289 Shin et al. Jan 1992 A
5121289 Gagliardi Jun 1992 A
5137677 Murata Aug 1992 A
5139973 Nagy et al. Aug 1992 A
5167896 Hirota et al. Dec 1992 A
5185919 Hickey Feb 1993 A
5196794 Murata Mar 1993 A
5200698 Thibaud Apr 1993 A
5210493 Schroeder et al. May 1993 A
5216405 Schroeder et al. Jun 1993 A
5244834 Suzuki et al. Sep 1993 A
5247202 Popovic et al. Sep 1993 A
5247278 Pant et al. Sep 1993 A
5250925 Shinkle Oct 1993 A
5289344 Gagnon et al. Feb 1994 A
5286426 Rano, Jr. et al. Mar 1994 A
5304926 Wu Apr 1994 A
5315245 Schroeder et al. May 1994 A
5329416 Ushiyama et al. Jul 1994 A
5332956 Oh Jul 1994 A
5332965 Wolf et al. Jul 1994 A
5351028 Krahn Sep 1994 A
5399968 Sheppard et al. Mar 1995 A
5412255 Wallrafen May 1995 A
5414355 Davidson et al. May 1995 A
5424558 Borden et al. Jun 1995 A
5432444 Yasohama Jul 1995 A
5434105 Liou Jul 1995 A
5453727 Shibasaki et al. Sep 1995 A
5469058 Dunnam Nov 1995 A
5479695 Grader et al. Jan 1996 A
5486759 Seiler et al. Jan 1996 A
5488294 Liddell et al. Jan 1996 A
5491633 Henry et al. Feb 1996 A
5497081 Wolf et al. Mar 1996 A
5500589 Sumcad Mar 1996 A
5500994 Itaya Mar 1996 A
5508611 Schroeder et al. Apr 1996 A
5514953 Schultz May 1996 A
5521501 Dettmann et al. May 1996 A
5551146 Kawabata et al. Sep 1996 A
5581170 Mammano et al. Dec 1996 A
5581179 Engel et al. Dec 1996 A
5621319 Bilotti et al. Apr 1997 A
5627315 Figi et al. May 1997 A
5631557 Davidson May 1997 A
5640090 Furuya et al. Jun 1997 A
5691637 Oswald et al. Nov 1997 A
5696790 Graham et al. Dec 1997 A
5712562 Berg Jan 1998 A
5714102 Highum et al. Feb 1998 A
5719496 Wolf Feb 1998 A
5729128 Bunyer et al. Mar 1998 A
5757181 Wolf et al. May 1998 A
5781005 Vig et al. Jul 1998 A
5789658 Henn et al. Aug 1998 A
5789915 Ingraham Aug 1998 A
5796249 Andräet et al. Aug 1998 A
5798462 Briefer et al. Aug 1998 A
5818222 Ramsden Oct 1998 A
5818223 Wolf Oct 1998 A
5839185 Smith et al. Nov 1998 A
5841276 Makino et al. Nov 1998 A
5859387 Gagnon Jan 1999 A
5886070 Honkura et al. Feb 1999 A
5883567 Mullins, Jr. Mar 1999 A
5912556 Frazee et al. Jun 1999 A
5963028 Engel et al. Oct 1999 A
6011770 Tan Jan 2000 A
6016055 Jager et al. Jan 2000 A
6032536 Peeters et al. Mar 2000 A
6043644 de Coulon et al. Mar 2000 A
6064198 Wolf et al. May 2000 A
6136250 Brown Oct 2000 A
6175232 De Coulon et al. Jan 2001 B1
6175233 McCurley et al. Jan 2001 B1
6180041 Takizawa Jan 2001 B1
6184679 Popovic et al. Feb 2001 B1
6198373 Ogawa et al. Mar 2001 B1
6242604 Hudlicky et al. Jun 2001 B1
6242904 Shirai et al. Jun 2001 B1
6242905 Draxelmayr Jun 2001 B1
6265865 Engel et al. Jul 2001 B1
6278269 Vig et al. Aug 2001 B1
6297627 Towne et al. Oct 2001 B1
6339322 Loreck et al. Jan 2002 B1
6351506 Lewicki Feb 2002 B1
6356068 Steiner et al. Mar 2002 B1
6366079 Uenoyama Apr 2002 B1
6392478 Mulder et al. May 2002 B1
6424018 Ohtsuka Jul 2002 B1
6429640 Daughton et al. Aug 2002 B1
6436748 Forbes et al. Aug 2002 B1
6437558 Li et al. Aug 2002 B2
6462536 Mednikov et al. Oct 2002 B1
6492804 Tsuge et al. Dec 2002 B2
6501270 Opie Dec 2002 B1
6504363 Dogaru et al. Jan 2003 B1
6525531 Forrest et al. Feb 2003 B2
6542847 Lohberg et al. Apr 2003 B1
6545332 Huang Apr 2003 B2
6545457 Goto et al. Apr 2003 B2
6545462 Schott et al. Apr 2003 B2
6566862 Goto et al. May 2003 B1
6566872 Sugitani May 2003 B1
6640451 Vinarcik Nov 2003 B1
6653968 Schneider Nov 2003 B1
6687644 Zinke et al. Feb 2004 B1
6692676 Vig et al. Feb 2004 B1
6707298 Suzuki et al. Mar 2004 B2
6759843 Furlong Jul 2004 B2
6770163 Kuah et al. Aug 2004 B1
6781233 Zverev et al. Aug 2004 B2
6781359 Stauth et al. Aug 2004 B2
6798193 Zimmerman et al. Sep 2004 B2
6815944 Vig et al. Nov 2004 B2
6822443 Dogaru Nov 2004 B1
6853178 Hayat-Dawoodi Feb 2005 B2
6896407 Nomiyama et al. May 2005 B2
6902951 Goller et al. Jun 2005 B2
6917321 Haurie et al. Jul 2005 B1
6989921 Bernstein et al. Jan 2006 B2
7026808 Vig et al. Apr 2006 B2
7031170 Daeche et al. Apr 2006 B2
7038448 Schott et al. May 2006 B2
7049924 Hayashi et al. May 2006 B2
7126327 Busch Oct 2006 B1
7132825 Martin Nov 2006 B2
7190784 Li Mar 2007 B2
7193412 Freeman Mar 2007 B2
7199579 Scheller et al. Apr 2007 B2
7259545 Stauth et al. Aug 2007 B2
7265531 Stauth et al. Sep 2007 B2
7269992 Lamb et al. Sep 2007 B2
7292095 Burt et al. Nov 2007 B2
7295000 Werth Nov 2007 B2
7319319 Jones et al. Jan 2008 B2
7323780 Daubenspeck et al. Jan 2008 B2
7323870 Tatschl et al. Jan 2008 B2
7325175 Momtaz Jan 2008 B2
7345468 Okada et al. Mar 2008 B2
7361531 Sharma et al. Apr 2008 B2
7362094 Voisine et al. Apr 2008 B2
7365530 Bailey et al. Apr 2008 B2
7385394 Auburger et al. Jun 2008 B2
7425821 Monreal et al. Sep 2008 B2
7474093 Ausserlechner Jan 2009 B2
7476953 Taylor et al. Jan 2009 B2
7518354 Stauth et al. Apr 2009 B2
7592801 Bailey et al. Sep 2009 B2
7598601 Taylor et al. Oct 2009 B2
7605647 Romero et al. Oct 2009 B1
7635993 Boeve Dec 2009 B2
7694200 Forrest et al. Apr 2010 B2
7701208 Nishikawa Apr 2010 B2
7705586 Van Zon et al. Apr 2010 B2
7729675 Krone Jun 2010 B2
7746056 Stauth et al. Jun 2010 B2
7746065 Pastre et al. Jun 2010 B2
7764118 Kusuda et al. Jul 2010 B2
7768083 Doogue et al. Aug 2010 B2
7769110 Momtaz Aug 2010 B2
7800389 Friedrich et al. Sep 2010 B2
7808074 Knittl Oct 2010 B2
7816772 Engel et al. Oct 2010 B2
7816905 Doogue et al. Oct 2010 B2
7839141 Werth et al. Nov 2010 B2
7923996 Doogue et al. Apr 2011 B2
7936144 Vig et al. May 2011 B2
7961823 Kolze et al. Jun 2011 B2
7982454 Fernandez et al. Jul 2011 B2
7990209 Romero Aug 2011 B2
8030918 Doogue et al. Oct 2011 B2
8058870 Sterling Nov 2011 B2
8063631 Fermon et al. Nov 2011 B2
8063634 Sauber et al. Nov 2011 B2
8106649 Kaita et al. Jan 2012 B2
8128549 Testani et al. Mar 2012 B2
8134358 Charlier et al. Mar 2012 B2
8143169 Engel et al. Mar 2012 B2
8274279 Gies Sep 2012 B2
8299783 Fernandez et al. Oct 2012 B2
8559139 Theuss Oct 2013 B2
8624588 Vig et al. Jan 2014 B2
8629539 Milano et al. Jan 2014 B2
8680846 Cesaretti et al. Mar 2014 B2
8680848 Foletto et al. Mar 2014 B2
9817078 Pepka et al. Nov 2017 B2
10725100 Milano Jul 2020 B2
11024576 West Jun 2021 B1
11519946 Rock Dec 2022 B1
20010002791 Tsuge et al. Jun 2001 A1
20010009367 Seitzer et al. Jul 2001 A1
20010026153 Nakamura et al. Oct 2001 A1
20020008513 Hiligsmann Jan 2002 A1
20020024109 Hayat-Dawoodi Feb 2002 A1
20020027488 Hayat-Dawoodi et al. Mar 2002 A1
20020084923 Li Jul 2002 A1
20020097639 Ishizaki Jul 2002 A1
20030001563 Turner Jan 2003 A1
20030038675 Gailus et al. Feb 2003 A1
20030062891 Slates Apr 2003 A1
20030102909 Motz Jun 2003 A1
20030222642 Butzmann Dec 2003 A1
20030227286 Dunisch et al. Dec 2003 A1
20040032251 Zimmerman et al. Feb 2004 A1
20040332251 Zimmerman et al. Feb 2004
20040046248 Waelti et al. Mar 2004 A1
20040062362 Matsuya Apr 2004 A1
20040080314 Tsujii et al. Apr 2004 A1
20040135220 Goto Jul 2004 A1
20040155644 Stauth et al. Aug 2004 A1
20040184196 Jayasekara Sep 2004 A1
20040189285 Uenoyama Sep 2004 A1
20040196045 Larsen Oct 2004 A1
20040263014 Miya Dec 2004 A1
20050017709 Stolfus et al. Jan 2005 A1
20050122095 Dooley Jun 2005 A1
20050122099 Imamoto et al. Jun 2005 A1
20050140355 Yamada et al. Jun 2005 A1
20050167790 Khor et al. Aug 2005 A1
20050179429 Lohberg Aug 2005 A1
20050280411 Bicking Dec 2005 A1
20060033487 Nagano et al. Feb 2006 A1
20060038559 Lamb et al. Feb 2006 A1
20060038561 Honkura Feb 2006 A1
20060068237 Murphy Mar 2006 A1
20060097717 Tokuhara et al. May 2006 A1
20060125473 Frachon et al. Jun 2006 A1
20060175674 Taylor Aug 2006 A1
20060181263 Doogue et al. Aug 2006 A1
20060202692 Tatschl et al. Sep 2006 A1
20060261801 Busch Nov 2006 A1
20070110199 Momtaz et al. May 2007 A1
20070170533 Doogue Jul 2007 A1
20070247135 Koga Oct 2007 A1
20070285089 Ibuki et al. Dec 2007 A1
20080013298 Sharma et al. Jan 2008 A1
20080116884 Rettig et al. May 2008 A1
20080137784 Krone Jun 2008 A1
20080143329 Ishihara Jun 2008 A1
20080211492 Tsukada et al. Sep 2008 A1
20080237818 Engel et al. Oct 2008 A1
20080238410 Charlier et al. Oct 2008 A1
20080258722 Zon Oct 2008 A1
20080270067 Eriksen et al. Oct 2008 A1
20090001964 Strzalkowski Jan 2009 A1
20090009163 Yamada Jan 2009 A1
20090058404 Kurumado Mar 2009 A1
20090085706 Baarman et al. Apr 2009 A1
20090102467 Snell et al. Apr 2009 A1
20090137398 Bozovic May 2009 A1
20090140724 Kentsch Jun 2009 A1
20090140725 Ausserlechner Jun 2009 A1
20090152696 Dimasacat et al. Jun 2009 A1
20090153138 Theuss Jun 2009 A1
20090167298 Kreutzbruck et al. Jul 2009 A1
20090167301 Ausserlechner Jul 2009 A1
20090168286 Berkley et al. Jul 2009 A1
20090206831 Fermon et al. Aug 2009 A1
20090243601 Feldtkeller Oct 2009 A1
20090251134 Uenoyama Oct 2009 A1
20090256552 Guo et al. Oct 2009 A1
20090315548 Bonin Dec 2009 A1
20100026288 Sauber Feb 2010 A1
20100033175 Boeve Feb 2010 A1
20100052667 Kohama et al. Mar 2010 A1
20100053789 Duric et al. Mar 2010 A1
20100141249 Ararao et al. Jun 2010 A1
20100188078 Foletto Jul 2010 A1
20100201356 Koller et al. Aug 2010 A1
20100207620 Gies Aug 2010 A1
20100211347 Friedrich et al. Aug 2010 A1
20100237450 Doogue et al. Sep 2010 A1
20100264909 Scheller et al. Oct 2010 A1
20100276769 Theuss et al. Nov 2010 A1
20100295140 Theuss et al. Nov 2010 A1
20100330708 Engel et al. Dec 2010 A1
20110004278 Aghassian et al. Jan 2011 A1
20110018533 Cesaretti et al. Jan 2011 A1
20110031960 Hohe et al. Feb 2011 A1
20110050220 Bootle Mar 2011 A1
20110187354 Zieren et al. Aug 2011 A1
20110224537 Brunner Sep 2011 A1
20110248711 Ausserlechner Oct 2011 A1
20110285384 Nomura Nov 2011 A1
20120013333 Ararao et al. Jan 2012 A1
20120019236 Tiernan et al. Jan 2012 A1
20120019239 Decitre Jan 2012 A1
20120062215 Ide et al. Mar 2012 A1
20120086090 Sharma et al. Apr 2012 A1
20120091994 Han et al. Apr 2012 A1
20120161759 Pozzati et al. Jun 2012 A1
20120182010 Lammel et al. Jul 2012 A1
20120293164 Liou et al. Nov 2012 A1
20120293167 Kitanaka et al. Nov 2012 A1
20120303305 Bergqvist et al. Nov 2012 A1
20120326643 Brannen Dec 2012 A1
20130138372 Ausserlechner May 2013 A1
20130147470 Mulholland et al. Jun 2013 A1
20130207648 Zibold et al. Aug 2013 A1
20130214777 Itoi Aug 2013 A1
20130241543 Stenson et al. Sep 2013 A1
20130300401 Krapf et al. Nov 2013 A1
20130300402 Liu et al. Nov 2013 A1
20130300406 Pepka et al. Nov 2013 A1
20140084912 van Vroonhoven Mar 2014 A1
20140184214 Schäffer et al. Jul 2014 A1
20140266181 Milano et al. Sep 2014 A1
20140327435 Rohrer Nov 2014 A1
20140333295 Fernandez et al. Nov 2014 A1
20150022193 Burdette et al. Jan 2015 A1
20150022198 David et al. Jan 2015 A1
20150211895 Reitsma et al. Jul 2015 A1
20150236869 Vreeland et al. Aug 2015 A1
20150323612 Latham Nov 2015 A1
20150326158 Furlan et al. Nov 2015 A1
20150346289 Ausserlechner Dec 2015 A1
20160011281 Sander et al. Jan 2016 A1
20160069662 Mullenix et al. Mar 2016 A1
20160123771 David et al. May 2016 A1
20160123774 Foletto et al. May 2016 A1
20160139230 Petrie et al. May 2016 A1
20160169983 Chang et al. Jun 2016 A1
20160339948 Nakamura et al. Nov 2016 A1
20170131366 Motz et al. May 2017 A1
20170219661 Hata et al. Aug 2017 A1
20170248445 Ausserlechner Aug 2017 A1
20220342007 Latham et al. Oct 2022 A1
Foreign Referenced Citations (144)
Number Date Country
101009474 Jan 2007 CN
102323554 Jan 2012 CN
102483443 May 2012 CN
102713654 Oct 2012 CN
102954808 Mar 2013 CN
105021864 Nov 2015 CN
25 18 054 Nov 1976 DE
40 31 560 Apr 1992 DE
41 41 386 Jun 1993 DE
195 39 458 Apr 1997 DE
196 34 715 Mar 1998 DE
196 50 935 Jun 1998 DE
198 38 433 Mar 1999 DE
199 61 504 Jun 2001 DE
102 10 184 Sep 2003 DE
103 14 602 Oct 2004 DE
10 2006 037 226 Feb 2008 DE
10 2007 018 238 Oct 2008 DE
10 2007 041 230 Apr 2009 DE
10 2007 044485 Apr 2009 DE
10 2010 016 584 Nov 2010 DE
10 2010 028390 Nov 2011 DE
10 2011 102483 Nov 2012 DE
10 2011 102483 Nov 2012 DE
0289414 Nov 1988 EP
0289414 Nov 1988 EP
0357013 Mar 1990 EP
0357013 Mar 1990 EP
0 361 456 Apr 1990 EP
0 680 103 Nov 1995 EP
0 898 180 Feb 1999 EP
0 944 888 Oct 2001 EP
1306687 May 2003 EP
1 403 648 Mar 2004 EP
1 443 332 Aug 2004 EP
1 580 560 Sep 2005 EP
1637898 Mar 2006 EP
1 662 353 May 2006 EP
1679524 Jul 2006 EP
1 783 507 May 2007 EP
1850143 Oct 2007 EP
2 063 229 May 2009 EP
1797496 Jul 2009 EP
2 108 966 Oct 2009 EP
2 685 273 Jan 2014 EP
2 748 105 Oct 1997 FR
2 909 756 Jun 2008 FR
2135060 Aug 1984 GB
2276727 Oct 1994 GB
2 481 482 Dec 2011 GB
60-152950 Aug 1985 JP
S6367583 Mar 1988 JP
363 084176 Apr 1988 JP
63-263782 Oct 1988 JP
63-300911 Dec 1988 JP
H2-116753 May 1990 JP
02-149013 Jun 1990 JP
H03-29817 Feb 1991 JP
H04-095817 Mar 1992 JP
04-152688 May 1992 JP
H06-273437 Sep 1994 JP
07-012582 Jan 1995 JP
H 07-128295 May 1995 JP
08097486 Apr 1996 JP
H08-511348 Nov 1996 JP
9-166612 Jun 1997 JP
H 09-292471 Nov 1997 JP
10-332725 Dec 1998 JP
11-064363 Mar 1999 JP
11074142 Mar 1999 JP
2000-183241 Jun 2000 JP
2001-043475 Feb 2001 JP
2001-141738 May 2001 JP
2001-1659951 Jun 2001 JP
2002-117500 Apr 2002 JP
2002-357920 Dec 2002 JP
2002-365350 Dec 2002 JP
2003-177171 Jun 2003 JP
2003-202365 Jul 2003 JP
2003-240759 Aug 2003 JP
2003-287439 Oct 2003 JP
2004-053499 Feb 2004 JP
2004-356338 Dec 2004 JP
2006-3116 Jan 2006 JP
2006-275764 Oct 2006 JP
2007-240202 Sep 2007 JP
4093381 Mar 2008 JP
2008-151530 Jul 2008 JP
2008-180550 Aug 2008 JP
2008-286667 Nov 2008 JP
2008-545964 Dec 2008 JP
2009-002911 Jan 2009 JP
2009-222524 Oct 2009 JP
2009-250725 Oct 2009 JP
2009-250931 Oct 2009 JP
2010-537207 Dec 2010 JP
2011086479 Apr 2011 JP
4880874 Dec 2011 JP
2012-501446 Jan 2012 JP
2012-150007 Aug 2012 JP
10-2010-0135747 Dec 2010 KR
10-2011-0085725 Jul 2011 KR
2012-0040247 Apr 2012 KR
2013-0019872 Feb 2013 KR
WO 198809026 Nov 1988 WO
WO9408203 Apr 1994 WO
WO 9429672 Dec 1994 WO
WO 9602849 Feb 1996 WO
WO 199949322 Sep 1999 WO
WO 200174139 Oct 2001 WO
WO 200174139 Oct 2001 WO
WO 2003069358 Aug 2003 WO
WO 2003069358 Aug 2003 WO
WO 2003107018 Dec 2003 WO
WO 2004027436 Apr 2004 WO
WO 2004072672 Aug 2004 WO
WO 2005013363 Feb 2005 WO
WO 2005013363 Feb 2005 WO
WO 2006035342 Apr 2006 WO
WO 2006056829 Jun 2006 WO
WO 2006083479 Aug 2006 WO
WO 2007095971 Aug 2007 WO
WO2007095971 Aug 2007 WO
WO 2007138508 Dec 2007 WO
WO 2007149200 Dec 2007 WO
WO 2008008140 Jan 2008 WO
WO 2008008140 Jan 2008 WO
WO 2008048379 Apr 2008 WO
WO 2008121443 Oct 2008 WO
WO 2008145662 Dec 2008 WO
WO 2009088767 Jul 2009 WO
WO 2009108422 Sep 2009 WO
WO 2009108422 Sep 2009 WO
WO 2010014309 Feb 2010 WO
WO 2010027658 Mar 2010 WO
WO 2010065315 Jun 2010 WO
WO 2010096367 Aug 2010 WO
WO 2011011479 Jan 2011 WO
WO 2012148646 Nov 2012 WO
WO 2013141981 Sep 2013 WO
WO 2013169455 Nov 2013 WO
WO 2014105302 Jul 2014 WO
WO 2015009442 Jan 2015 WO
WO2015058733 Apr 2015 WO
Non-Patent Literature Citations (396)
Entry
Appeal Brief dated Sep. 19, 2017 from Japanese Application No. 2015-511491 with English translations; 14 Pages.
Pre-Trial Report dated Nov. 2, 2017 from Japanese Application No. 2015-511491 with English translations and Claims on File; 7 Pages.
U.S. Appl. No. 15/606,358, filed May 26, 2017, Latham et al.
U.S. Appl. No. 15/606,325, filed May 26, 2017, Latham et al.
U.S. Appl. No. 15/606,332, filed May 26, 2017, Latham et al.
Response to Official Communication dated Mar. 13, 2017 for European Application No. 16193227.2; 7 pages.
U.S. Final Office Action dated Oct. 5, 2017 for U.S. Appl. No. 13/946,400; 39 pages.
Non-Final Office Action dated Oct. 20, 2017 for U.S. Appl. No. 15/176,645; 24 pages.
U.S. Final Office Action dated Jun. 15, 2018 for U.S. Appl. No. 13/946,417; 33 Pages.
U.S. Non-Final Office Action dated Feb. 8, 2018 for U.S. Appl. No. 13/946,417; 28 Pages.
Response to U.S. Non-Final Office Action dated Feb. 8, 2018 for U.S. Appl. No. 13/946,417; Response filed Apr. 19, 2018; 14 Pages.
Response to Final Office Action dated Sep. 8, 2017 for U.S. Appl. No. 13/946,417; Response and RCE filed Nov. 29, 2017; 16 Pages.
Japanese Office Action (with English Translation) dated May 24, 2018 for Japanese Application No. 2016-500374; 7 Pages.
Response to Chinese Office Action dated Feb. 1, 2018 for Chinese Application No. 201480040243.6; Response filed Jun. 14, 2018; 11 pages.
Japanese Notice of Allowance (with English Translation) dated Sep. 28, 2018, for Japanese Application No. 2016-528006; 6 Pages.
Korean Notice of Allowance (with English Translation) dated Oct. 2, 2018, for Korean Application No. 10-2016-7004178; 5 Pages.
U.S. Non-Final Office Action dated Oct. 5, 2018, for U.S. Appl. No. 16/029,826; 61 Pages.
Japanese Office Action (with English Translation) dated May 16, 2018 for Japanese Application No. 2015-511491; 9 Pages.
Korean Office Action (with English Translation) dated May 30, 2018 for Korean Application No. 10-2016-7004178; 11 Pages.
Response to Japanese Office Action (with English claims) dated Oct. 3, 2017 for Japanese Application No. 2016-528006; Response filed Dec. 26, 2017; 8 Pages.
Response to U.S. Final Office Action dated Oct. 5, 2017 for U.S. Appl. No. 13/946,400; Response filed Jan. 5, 2018; 11 Pages.
Response to Japanese Office Action dated Oct. 2, 2017 corresponding with Japanese Appl. No. 2016-500374; Response (with English set of Claims) filed Dec. 25, 2017; 15 Pages.
Korean Office Action (with English Translation) dated Dec. 20, 2017 corresponding to Korean Appl. No. 10-2014-7032857; 14 Pages.
Response to Office Action filed Jan. 19, 2018 for U.S. Appl. No. 15/176,645; 25 pages.
Korean Response (with English Language Summary) dated Jan. 19, 2018 for Korean Application No. 10-2016-7004178; 25 Pages.
Japanese Petition (with Machine English Translation) filed Jan. 24, 2018 for Japanese Application No. 2015-511491; 10 Pages.
Response (with English Translation) to Korean Notice of Reasons for Refusal dated Dec. 20, 2017 for Korean Application No. 10-2014-7032857; Response filed Feb. 14, 2018; 47 Pages.
U.S. Final Office Action dated Feb. 22, 2018 for U.S. Appl. No. 13/837,982; 44 Pages.
Chinese Office Action (w/English Translation) dated Feb. 1, 2018 for Chinese Application No. 201480040243.6; 26 Pages.
Notice of Allowance dated Apr. 4, 2018 for U.S. Appl. No. 13/946,400; 11 pages.
Response to U.S. Non-Final Office Action dated Feb. 8, 2018 for U.S. Appl. No. 13/946,417; Response filed on Apr. 19, 2018; 14 pages.
U.S. Non-Final Office Action dated Jul. 26, 2018 for U.S. Appl. No. 13/837,982; 45 Pages.
Japanese Notice of Reason for Rejection (with English Translation) dated Aug. 2, 2018 for Japanese Application No. 2017-178549; 4 Pages.
Response to Japanese Office Action with English translations of Amended Claims for Japanese Application No. 2016-528006 as filed on Aug. 3, 2018; 7 Pages.
PCT International Search Report and Written Opinion of the ISA dated Aug. 10, 2018 for PCT/US2018/028816; 23 Pages.
Notice of Allowance dated Apr. 4, 2018 for U.S. Appl. No. 15/176,645; 11 pages.
Response to Final Office Action dated Jun. 15, 2018 for U.S. Appl. No. 13/946,417 as filed on Sep. 14, 2018; 15 Pages.
Response to Korean Office Action dated May 30, 2018 for Korean Application No. 10-2016-7004178; Response (with English claims) filed Jul. 19, 2018; 41 pages.
Japanese Office Action (with English translation) dated Jun. 1, 2018 for Japanese Application No. 2016-528006; 7 pages.
Korean Notice of Allowance (with English translation and allowed claims) dated Jun. 29, 2018 for Korean Application No. 10-2014-7032857; 8 pages.
Japanese Office Action (with English Translation) dated May 16, 2018 for Japanese Application No. 2015-511491; 6 Pages.
Response to Final Office Action dated Feb. 22, 2018 for U.S. Appl. No. 13/837,982; RCE/Response filed May 21, 2018; 13 Pages.
Second Office Action (with English Translation) dated Oct. 9, 2018 for Chinese Application No. 201480040243.6 with English Translation; 23 Pages.
Response (with English Translation and Amended Claims) to Second Chinese Office Action dated Oct. 9, 2018 for Chinese Application No. 201480040243.6; Response filed Dec. 24, 2018; 15 Pages.
Japanese Office Action (with English Translation) dated Dec. 17, 2018 for Japanese Application No. 2015-511491; 10 Pages.
PCT International Search Report and Written Opinion dated Nov. 23, 2018 for International Application No. PCT/US2018/028475; 17 Pages.
PCT International Search Report and Written Opinion dated Nov. 30, 2018 for International Application No. PCT/US2018/028821; 12 Pages.
U.S. Final Office Action dated Jan. 10, 2019 for U.S. Appl. No. 13/837,982; 44 Pages.
Response to U.S. Non-Final Office Action dated Jul. 26, 2018, for U.S. Appl. No. 13/837,982; Response filed on Oct. 24, 2018; 6 Pages.
International Preliminary Report on Patentability dated Dec. 20, 2018 for International Application No. PCT/US2017/033526; 11 Pages.
U.S. Non-Final Office Action dated Jan. 24, 2019 for U.S. Appl. No. 15/606,358; 27 pages.
U.S. Non-Final Office Action dated Feb. 7, 2019 for U.S. Appl. No. 13/946,417; 35 pages.
Response to U.S. Non-Final Office Action dated Nov. 8, 2018 for U.S. Appl. No. 15/606,325; Response filed Feb. 7, 2019; 14 pages.
Response to U.S. Non-Final Office Action dated Oct. 5, 2018 for U.S. Appl. No. 16/029,826; Response filed Feb. 1, 2019; 10 pages.
Japanese Office Action with English Translations for Japanese Application No. 2017-178549 dated Jul. 30, 2018; 4 Pages.
Response to Final Office Action dated Jun. 15, 2018 for U.S. Appl. No. 13/946,417, filed Nov. 14, 2018; 14 Pages.
Response filed on Nov. 14, 2018 for Japanese Application No. 2015-511491 with English Translation; 11 Pages.
Response filed on Nov. 14, 2018 for Japanese Application No. 2017-178549 with English Translation; 13 Pages.
Response filed on Nov. 22, 2018 for Japanese Application No. 2016-500374 with English Translation; 10 Pages.
Response to U.S. Non-Final Office Action dated Feb. 7, 2019 for U.S. Appl. No. 13/946,417; Response filed Apr. 22, 2019; 14 pages.
Response filed on Mar. 14, 2019 for Japanese Application No. 2015-511491 with English Machine Translation; 12 Pages.
Japanese Notice of Allowance (with Reporting Letter and Allowed Claims in English) dated Feb. 27, 2019 for Japanese Application No. 2016-500374; 9 Pages.
Office Action dated Mar. 22, 2019 for Chinese Application No. 201480040243.6 with English Translation; 22 Pages.
RCE and Response to Final Office Action dated Jan. 10, 2019 for U.S. Appl. No. 13/837,982, filed Apr. 8, 2019; 17 Pages.
Response to Non-Final Office Action dated Jan. 24, 2019 for U.S. Appl. No. 15/606,358, filed Apr. 17, 2019; 12 Pages.
Notice of Allowance dated Apr. 16, 2019 for Japanese Application No. 2017-178549 with English Translation of Allowed claims; 8 Pages.
Non-Final Office Action dated Jun. 13, 2019 for U.S. Appl. No. 15/606,332; 24 Pages.
Response filed on Jun. 6, 2019 for Chinese Application No. 201480040243.6; 17 Pages.
Japanese Notice of Allowance (with English Translation of Allowed Claims) dated May 16, 2019 for Japanese Application No. 2015-511491; 6 Pages.
U.S. Final Office Action dated May 16, 2019 for U.S. Appl. No. 15/606,325; 24 Pages.
European Examination Report dated Jun. 14, 2019 for European Application No. 14708772.0; 8 Pages.
Response to U.S. Office Action dated May 16, 2019 for U.S. Appl. No. 15/606,325; Response filed on Aug. 14, 2019; 15 Pages.
Non-Final Office Action dated Aug. 22, 2019 for U.S. Appl. No. 15/606,358; 32 Pages.
Response to Office Action dated Jun. 13, 2019 for U.S. Appl. No. 15/606,332, filed Aug. 26, 2019; 18 Pages.
Response for European Application No. 17726475.1 as filed on Aug. 5, 2019; 23 Pages.
Response (with Amended Claims) to European 161/162 Communication dated Jan. 10, 2020 for European Application No. 18723644.3; Response Filed Jul. 17, 2020; 15 Pages.
Response (with Amended Claims) to European Examination Report dated May 15, 2020 for European Application No. 16193227.2; Response Filed Sep. 15, 2020; 7 Pages.
Korean Notice of Allowance (with English Translation & Copy of Allowed Claims) dated Oct. 14, 2020 for Korean Application No. 10-2015-7029243; 6 Pages.
U.S. Appl. No. 16/856,582, filed Apr. 23, 2020, David et al.
Mason, “Basic Introduction to the use of Magnetoresistive Sensors;” Zetex Semiconductor, Issue 1—Application Note 37; Sep. 2003; 19 Pages.
TE.com, “Basics of Magnetoresistive (MR) Sensor;” Retrieved from TE.com; Date Unknown; 11 Pages.
European Examination Report dated May 15, 2020 for European Application No. 16193227.2; 8 Pages.
Response to U.S. Final Office Action dated Oct. 5, 2017 for U.S. Appl. No. 13/946,400; Response filed Feb. 27, 2018; 14 Pages.
U.S. Final Office Action dated Sep. 19, 2019 for U.S. Appl. No. 16/029,826; 22 Pages.
Response to U.S. Final Office Action dated Sep. 19, 2019 for U.S. Appl. No. 16/029,826; Response filed Oct. 21, 2019; 12 Pages.
U.S. Non-Final Office Action dated Nov. 29, 2019 for U.S. Appl. No. 16/029,826; 30 Pages.
Response to U.S. Non-Final Office Action dated Nov. 29, 2019 for U.S. Appl. No. 16/029,826; Response filed Jan. 17, 2020; 14 Pages.
U.S. Notice of Allowance dated Mar. 23, 2020 for U.S. Appl. No. 16/029,826; 13 Pages.
European Rule 161/162 Communication dated Feb. 23, 2016 for European Application No. 14742423.8; 2 Pages.
European Examination Report dated Jan. 27, 2020 for European Application No. 14742423.8; 7 Pages.
Response (with Amended Claims) to European Examination Report dated Jan. 27, 2020 for European Application No. 14742423.8; Response Filed May 27, 2020; 10 Pages.
Japanese Office Action (with English Translation) dated Oct. 3, 2017 for Japanese Application No. 2016-528006; 6 Pages.
Chinese 4th Office Action (with English Translation) dated Sep. 3, 2019 for Chinese Application No. 201480040243.6; 23 Pages.
Response (with English Translation) to Chinese 4th Office Action dated Sep. 3, 2019 for Chinese Application No. 201480040243.6; Response filed Dec. 17, 2019; 17 Pages.
Chinese Notice of Grant (with English Translation and Allowed Claims) dated Jan. 9, 2020 for Chinese Application No. 201480040243.6; 11 Pages.
Response to U.S. Final Office Action dated Jun. 15, 2018 for U.S. Appl. No. 13/946,417; Response filed Sep. 14, 2018; 15 Pages.
U.S. Notice of Allowance dated Sep. 11, 2019 for U.S. Appl. No. 13/946,417; 10 Pages.
U.S. Supplemental Notice of Allowability dated Oct. 2, 2019 for U.S. Appl. No. 13/946,417; 7 Pages.
U.S. Non-Final Office Action dated Nov. 18, 2019 for U.S. Appl. No. 13/837,982; 45 Pages.
Response to U.S. Non-Final Office Action dated Nov. 18, 2019 for U.S. Appl. No. 13/837,982; Response filed Mar. 17, 2020; 16 Pages.
U.S. Notice of Allowance dated Apr. 20, 2020 for U.S. Appl. No. 13/837,982; 17 Pages.
Response to European Examination Report dated Jun. 14, 2019 for European Application No. 14708772.0; Response filed Dec. 12, 2019; 7 Pages.
Korean 1st Office Action (with English Translation) dated Sep. 18, 2019 for Korean Application No. 10-2015-7029243; 14 Pages.
Response (with Machine English Translation) to Korean Office Action dated Sep. 18, 2019 for Korean Application No. 10-2015-7029243; Response filed Nov. 15, 2019; 41 Pages.
Korean 2nd Office Action (with Machine English Translation) dated Feb. 24, 2020 for Korean Application No. 10-2015-7029243; 12 Pages.
Response (with Machine English Translation) to Korean 2nd Office Action dated Feb. 24, 2020 for Korean Application No. 10-2015-7029243; Response filed Apr. 22, 2020; 29 Pages.
European Rules 161/162 Communication dated Jan. 24, 2019 for European Application No. 17726475.1; 3 Pages.
European Examination Report dated Oct. 9, 2019 for European Application No. 17726475.1; 6 Pages.
Response to European Examination Report dated Oct. 9, 2019 for European Application No. 17726475.1; Response filed Feb. 24, 2020; 12 Pages.
Submission of References filed Feb. 25, 2020 for European Application No. 17726475.1; 32 Pages.
European Intention to Grant dated May 6, 2020 for European Application No. 17726475.1; 7 Pages.
Response to U.S. Non-Final Office Action dated Aug. 22, 2019 for U.S. Appl. No. 15/606,358; Response filed Dec. 4, 2019; 20 Pages.
U.S. Final Office Action dated Mar. 6, 2020 for U.S. Appl. No. 15/606,358; 43 Pages.
RCE and Response to U.S. Final Office Action dated Mar. 6, 2020 for U.S. Appl. No. 15/606,358; RCE and Response filed Jul. 1, 2020; 16 Pages.
PCT International Preliminary Report dated Dec. 5, 2019 for International Application No. PCT/US2018/028475; 11 Pages.
European Rules 161/162 Communication dated Jan. 10, 2020 for European Application No. 18723635.1; 3 Pages.
Response to European Rules 161/162 Communication dated Jan. 10, 2020 for European Application No. 18723635.1; Response filed Jul. 17, 2020; 18 Pages.
U.S. Final Office Action dated Nov. 27, 2019 for U.S. Appl. No. 15/606,332; 29 Pages.
Request for Continued Examination (RCE) and Response to Final Office Action dated Nov. 27, 2019 for U.S. Appl. No. 15/606,332; Response filed Feb. 7, 2020; 20 Pages.
U.S. Non-Final Office Action dated Apr. 2, 2020 for U.S. Appl. No. 15/606,332; 35 Pages.
Response to U.S. Non-Final Office Action dated Apr. 2, 2020 for U.S. Appl. No. 15/606,332; Response filed Jun. 15, 2020; 20 Pages.
PCT International Preliminary Report dated Dec. 5, 2019 for International Application No. PCT/US2018/028816; 18 Pages.
European Rules 161/162 Communication dated Jan. 10, 2020 for European Application No. 18726263.9; 3 Pages.
Response to European Rules 161/162 Communication dated Jan. 10, 2020 for European Application No. 18726263.9; Response filed Jul. 10, 2020; 18 Pages.
U.S. Non-Final Office Action dated Nov. 8, 2018 for U.S. Appl. No. 15/606,325; 24 Pages.
U.S. Notice of Allowance dated Jul. 28, 2020 for U.S. Appl. No. 15/606,325; 33 Pages.
PCT International Preliminary Report dated Dec. 5, 2019 for International Application No. PCT/US2018/028821; 8 Pages.
European Rules 161/162 Communication dated Jan. 10, 2020 for European Application No. 18723644.3; 3 Pages.
Japanese Voluntary Amendment (with Machine English Translation from Espacenet.com) filed on Nov. 13, 2020 for Japanese Application No. 2019-565298; 4 Pages.
Request for Continued Examination (RCE) and Response to Final Office Action dated Sep. 17, 2020 for U.S. Appl. No. 15/606,332; RCE and Response filed Dec. 2, 2020; 23 Pages.
Final Office Action dated Sep. 17, 2020 for U.S. Appl. No. 15/606,332; 21 pages.
U.S. Notice of Allowance dated Feb. 16, 2021 for U.S. Appl. No. 15/606,358; 10 Pages.
U.S. Non-Final Office Action dated Feb. 19, 2021 for U.S. Appl. No. 16/856,582; 37 Pages.
Advisory Action dated Feb. 16, 2017 for U.S. Appl. No. 13/946,400; 4 Pages.
Ahn et al., “A New Toroidal-Meander Type Integrated Inductor With a Multilevel Meander Magnetic Core”, IEEE Transactions on Magnetics, vol. 30, No. 1, Jan. 1994, pp. 73-79.
Allegro “Two-Wire True Zero Speed Miniature Differential Peak-Detecting Gear Tooth Sensor;” ATS645LSH; 2004; Allegro MicroSystems, Inc., Worcester, MA 01615; pp. 1-14.
Allegro MicroSystems, Inc., “Gear-Tooth Sensor for Automotive Applications,” Aug. 3, 2001.
Allegro MicroSystems, Inc., Hall-Effect IC Applications Guide, http://www.allegromicro.com/en/Products/Design/an/an27701.pdf, Copyright 1987, 1997, pp. 1-36.
Allegro “True Zero-Speed Low-Jitter High Accuracy Gear Tooth Sensor;” ATS625LSG; 2005; Allegro MicroSystems, Inc. Worcester, MA 01615; pp. 1-21.
Allegro Microsystems, Inc. Data Sheet A1341; “High Precision, Highly Programmable Linear Hall Effect Sensor IC with EEPROM, Output Protocols SENT and PWM, and Advanced Output Linearization Capabilities;” May 17, 2010; 46 pages.
Allegro Microsystems, Inc. Data Sheet ATS601LSG; “Non-TPOS, Tooth Detecting Speed Sensor;” Nov. 1, 2011; 9 pages.
Amendment under PCT Article 19 filed on Oct. 5, 2010 in PCT/US2010/024256, 18 pages.
Amendment and RCE dated Sep. 9, 2015; for U.S. Appl. No. 13/946,400; 12 pages.
Applicant-Initiated Interview Summary dated Mar. 10, 2017 for U.S. Appl. No. 13/946,400; 2 pages.
Ausserlechner et al.; “Compensation of the Piezo-Hall Effect in Integrated Hall Sensors on (100)-Si;” IEEE Sensors Journal, vol. 7, No. 11; Nov. 2007; ISBN: 1530-437X; pp. 1475-1482.
Ausserlechner et al.; “Drift of Magnetic Sensitivity of Small Hall Sensors Due to Moisture Absorbed by the IC-Package;” Proceedings of IEEE Sensors, 2004; vol. 1; Oct. 24, 2004; ISBN:0-7803-8692-2; pp. 455-458.
Ausserlechner; “The piezo-Hall effect in n-silicon for arbitrary crystal orientation;” Proceedings of IEEE Sensors; vol. 3; Oct. 24, 2004; ISBN: 0-7803-8692-2; pp. 1149-1152.
Ausserlechner; “Limits of Offset Cancellation by the Principle of Spinning Current Hall Probe;” Proceedings of IEEE Sensors; Oct. 2004; pp. 1117-1120.
Bahreyni, et al.; “A Resonant Micromachined Magnetic Field Sensor;” IEEE Sensors Journal; vol. 7, No. 9, Sep. 2007; pp. 1326-1334.
Barrettino, et al.; “CMOS-Based Monolithic Controllers for Smart Sensors Comprising Micromembranes and Microcantilevers;” IEEE Transactions on Circuits and Systems-I Regular Papers vol. 54, No. 1; Jan. 2007; pp. 141-152.
Baschirotto et al.; “Development and Analysis of PCB Vector 2-D Magnetic Field Sensor System for Electronic Compass;” IEEE Sensors Journal vol. 6, No. 2; Apr. 2006; pp. 365-371.
Bilotti et al.; “Monolithic Magnetic Hall Sensor Using Dynamic Quadrature Offset Cancellation;” IEEE Journal of Solid-State Circuits; vol. 32, Issue 6; Jun. 1997; pp. 829-836.
Bowers et al., “Microfabrication and Process Integration of Powder-Based Permanent Magnets”, Interdisciplinary Microsystems Group, Dept. Electrical and Computer Engineering, University of Florida, USA; Technologies for Future Micro-Nano Manufacturing Workshop, Napa, California, Aug. 8-10, 2011, pp. 162-165.
Cesaretti et al.; “Circuits and Methods for Self-Calibrating or Self-Testing a Magnetic Field Sensor;” U.S. Appl. No. 13/095,371, filed Apr. 27, 2011; 62 pages.
Cessaretti et al; “Circuits and Methods Using Adjustable Feedback for Self-Calibrating or Self-Testing a Magnetic Field Sensor with an Adjustable Time Constraint;” U.S. Appl. No. 13/398,127; 85 pages.
Cessaretti et al; “Circuits and Methods for Generating a Diagnostic Mode of Operation in a Magnetic Field Sensor;” U.S. Appl. No. 12/840,324; 80 pages.
CN Office Action (w/English translation); dated Sep. 10, 2010; for CN Pat. App. No. CN 2008 800088956; 14 pages.
CN Office Action dated May 3, 2012; for CN Pat. App. No. 200980189766.7 with English translation, 15 pages.
CN Response to Office Action filed on Oct. 18, 2012; for CN Pat. App. No. 200980189766.7; 10 pages.
Daughton J: “Spin-dependent sensors”, Proceedings of the IEEE New York, US, vol. 91. No. 5 May 1, 2003; 6 pages.
Decision to Grant dated Oct. 27, 2016; for European Pat. App. No. 13722619.7; 2 pages.
Demierre, et al.; “Reference Magnetic Actuator for Self-Calibration of a Very Small Hall Sensor Array;” Sensors and Actuators A97-98; Apr. 2002; pp. 39-46.
Donovan et al.; “Systems and Methods for Synchronizing Sensor Data;” U.S. Appl. No. 12/968,353, filed Dec. 15, 2010; 37 pages.
Doogue et al.; Magnetic Field Sensor with Automatic Sensitivity Adjustment; U.S. Appl. No. 12/959,672, filed Dec. 3, 2010; 55 pages.
Dwyer, “Back-Biased Packaging Advances (SE, SG & SH versus SA & SB),” http://www.allegromicro.com/en/Products/Design/packaging_advances/index.asp, Copyright 2008, pp. 1-5.
EP Office Action dated Mar. 2, 2005 for EP 03 710 766.1; 8 pages.
EP Summons to Oral Proceedings dated Apr. 30, 2009 for EP 03 710 766.1; 4 pages.
EP Response to Office Action submitted May 2009 for EP 03 710 766.1; 19 pages.
EP Response to Written Opinion; dated Mar. 9, 2011; for EP Pat. App. No. 09789890.2; 11 pages.
EP Official Communication; dated Feb. 23, 2012; for EP. Pat. App. No. 10739429.8; 2 pages.
European Response to Written Opinion filed on May 28, 2015; for European Pat. App. No. 13722619.7, 15 pages.
European Communication under Rule 71(3) EPC, Intention to Grant dated Jun. 2, 2016 corresponding to European Application No. 13722619.7; 7 Pages.
European Response filed on Aug. 24, 2016 to the official communication dated Feb. 23, 2016; for European Pat. App. No. 14742423.8; 17 pages.
European Extended Search Report dated Dec. 22, 2016; for European Pat. App. No. 16193227.2; 11 pages.
Final Office Action dated Jul. 17, 2014 for U.S. Appl. No. 13/468,478; 13 Pages.
Final Office Action dated Jun. 9, 2015 for U.S. Appl. No. 13/946,400; 17 pages.
Final Office Action dated Aug. 28, 2015 for U.S. Appl. No. 13/946,417; 34 pages.
Final Office Action dated Sep. 16, 2015 for U.S. Appl. No. 13/468,478; 19 Pages.
Final Office Action dated Oct. 6, 2016; for U.S. Appl. No. 13/946,417; 45 pages.
Final Office Action dated Oct. 20, 2016 for U.S. Appl. No. 13/946,400; 20 pages.
Final Office Action dated Jan. 26, 2017 for U.S. Appl. No. 13/837,982; 40 Pages.
Final Office Action dated Feb. 10, 2017 for U.S. Appl. No. 13/468,478; 27 Pages.
Final Office Action dated Sep. 8, 2017 for U.S. Appl. No. 13/946,417; 56 Pages.
Final Office Action dated Oct. 5, 2017 for U.S. Appl. No. 13/946,400; 39 Pages.
Frick, et al.; “CMOS Microsystem for AC Current Measurement with Galvanic Isolation;” IEEE Sensors Journal; vol. 3, No. 6; Dec. 2003; pp. 752-760.
Halg; “Piezo-Hall Coefficients of n-Type Silicon;” Journal of Applied Physics; vol. 64, No. 1; Jul. 1, 1988; pp. 276-282.
Hosticka; “CMOS Sensor Systems;” Sensors and Actuators A66; Apr. 1998; pp. 335-341.
Honeywell International, Inc., “Hall Effect Sensing and Application,” Micro Switch Sensing and Control, Chapter 3, http://content.honeywell.com/sensing/prodinfo/solidstate/technical/hallbook.pdf, date unavailable but believed to be before Jan. 2008, pp. 9-18.
Infineon Technologies; “Differential Two-Wire Hall Effect Sensor IC;” TLE4942 Preliminary Data Sheet; Jun. 2000; pp. 1-13.
Infineon Product Brief, TLE 4941plusC, Differential Hall IC for Wheel Speed Sensing, Oct. 2010, www.infineon.com/sensors, 2 pages.
Japanese Voluntary Amendment with English Claims dated Dec. 12, 2016; for Japanese Pat. App. No. 2016-528006; 7 pages.
Johnson et al., “Hybrid Hall Effect Device,” Appl. Phys. Lett., vol. 71, No. 7, Aug. 1997, pp. 974-976.
JP Official Action translation dated Apr. 7, 2008 for JP 2003-568426; 5 pages.
JP Response to Official Action and translation dated Sep. 22, 2008 for JP 2003-568426; 14 pages.
JP Official Action translation dated Dec. 12, 2008 for JP 2003-568426; 4 pages.
JP Response to Decision of Refusal and Demand of Appeal with translation filed Mar. 25, 2009 for JP 2003-568426; 8 pages.
JP Notice of Rejection translation dated Nov. 16, 2010; for JP 2003-568426; 5 pages.
JP Amendment with translation of claims filed May 13, 2011; for JP 2003-568426; 17 pages.
JP Office Action and claims translation dated Aug. 29, 2011; for JP 2003-568426; 9 pages.
JP Amendment translation filed Oct. 11, 2011 for JP Patent Application No. 2003-568426; 6 pages.
JP Notice of Allowance dated Nov. 8, 2011; for JP Patent Application No. 2003-568426; 3 pages.
Japanese Notice of Appeal and Appeal Brief (with English Claims) filed on Sep. 19, 2017 to the Office Action dated May 18, 2017; for Japanese Pat. App. No. 2015-511491; 12 pages.
Japanese Office Action (with English Translation) dated Jan. 13, 2017 for Japanese Application No. 2015-511491; 11 Pages.
Japanese Office Action (with English Translation) dated May 18, 2017 for Japanese Application No. 2015-511491; 5 Pages.
Japanese Office Action (with English Translation) dated Oct. 2, 2017 for Japanese Application No. 2016-500374; 13 Pages.
Kanda et al.; “The Piezo-Hall Effect in n-Silicon;” 22nd International Conference on the Physics of Semiconductors; vol. 1, Jan. 1995; pp. 89-92.
Krammerer et al.: “A Hall effect sensors network insensitive to mechanical stress;” Proceedings of IEEE Sensors; vol. 3, Oct. 2004; pp. 1071-1074.
Lagorce et al.; “Magnetic and Mechanical Properties of Micromachined Strontium Ferrite/Polyimide Composites;” Journal of Microelectromechanical Systems; vol. 6, No. 4; Dec. 1997; pp. 307-312.
Lequesne et al.; “High-Accuracy Magnetic Position Encoder Concept;” IEEE Transactions on Industry Applications; vol. 35, No. 3; May/Jun. 1999; pp. 568-576.
Magnani et al.; “Mechanical Stress Measurement Electronics Based on Piezo-Resistive and Piezo-Hall Effects;” 9th International Conference on Electronics, Circuits and Systems 2002; vol. 1; SBN: 0-7803-7596-3; Dec. 2002; pp. 363-366.
Manic et al.; “Short and Long-Term Stability Problems of Hall Plates in Plastic Packages;” IEEE 38th Annual International Reliability Physics Symposium; Apr. 2000; pp. 225-230.
Manic; “Drift in Silicon Integrated Sensors and Circuits Due to the Thermo-Mechanical Stresses;” Lausanne, École Polytechnique Fédérale De Lausanne 2000; Part 1 of 2; 74 pages.
Manic; “Drift in Silicon Integrated Sensors and Circuits Due to the Thermo-Mechanical Stresses;” Lausanne, École Polytechnique Fédérale De Lausanne 2000; Part 2 of 2; 102 pages.
Melexis Microelectronic Systems, Hall Applications Guide, Section 3—Applications,1997 (48 pages).
Motz et al.; “An Integrated Magnetic Sensor with Two Continuous-Time ΔΣ-Converters and Stress Compensation Capability;” IEEE International Solid-State Circuits Conference; Digest of Technical Papers; Feb. 6, 2006; ISBN: 1-4244-0079-1; pp. 1151-1160.
Motz, et al.; “A Chopped Hall Sensor with Small Jitter and Programmable “True Power-On” Function;” IEEE Journal of Solid-State Circuits; vol. 40, No. 7; Jul. 2005; pp. 1533-1540.
Motz, et al.; “An Integrated Hall Sensor Platform Design for Position, Angle and Current Sensing;” IEEE Sensors 2006; Exco, Daegu, Korea / Oct. 22-25, 2006; pp. 1008-1011.
Munter; “A Low-offset Spinning-current Hall Plate;” Sensors and Actuators A21-A23; 1990; pp. 742-746.
Munter; “Electronic Circuitry for a Smart Spinning-current Hall Plate with Low Offset;” Sensors and Actuators A; Jun. 1991;.pp. 747-751.
Notice of Allowance dated Nov. 3, 2010 for U.S. Appl. No. 12/037,393, 7 pages.
Notice of Allowance dated Feb. 11, 2011 for U.S. Appl. No. 12/037,393, 8 pages.
Notice of Allowance dated Jun. 27, 2011 for U.S. Appl. No. 12/959,672; 8 pages.
Notice of Allowance dated Jul. 19, 2011 for U.S. Appl. No. 12/959,672; 7 pages.
Notification of Transmittal of the International Search Report and the Written Opinion of the International Searching Authority, or the Declaration; PCT/US2012/032315, dated Jun. 22, 2012, 18 pages.
Notice of Allowance dated May 15, 2017 for U.S. Appl. No. 13/468,478; 15 Pages.
Letter to NTD Patent and Trademark Agency; dated Aug. 29, 2012; Chinese Pat. App. No. 200980129766.7; including U.S. Amendments filed Jan. 13, 1012 and May 9, 2012; 20 pages.
Office Action/Restriction Requirement dated May 14, 2010 for U.S. Appl. No. 12/037,393 6 pages.
Office Action dated Jun. 30, 2010 for U.S. Appl. No. 12/037,393; 21 pages.
Office Action dated Feb. 2, 2011 from U.S. Appl. No. 12/959,672.
Office Action dated May 12, 2011; for U.S. Appl. No. 12/183,367; 17 pages.
Office Action dated Oct. 20, 2011; for U.S. Appl. No. 12/183,367; 9 pages.
Office Action/Restriction Requirement dated Apr. 12, 2012; for U.S. Appl. No. 12/183,367; 6 pages.
Office Action dated Aug. 29, 2012 from Chinese Application No. 200980106535.4, 8 pages.
Office Action dated Jul. 6, 2012; for U.S. Appl. No. 12/706,318, filed Feb. 16, 2010; 24 pages.
Office Action dated Sep. 11, 2012 from U.S. Appl. No. 12/840,324, 30 pages.
Office Action dated Jan. 15, 2014 for U.S. Appl. No. 13/468,478; 36 pages.
Office Action dated Feb. 12, 2015 for U.S. Appl. No. 13/468,478; 14 pages.
Office Action dated Mar. 20, 2015 for U.S. Appl. No. 13/946,417; 54 pages.
Office Action dated Jul. 8, 2015 for U.S. Appl. No. 13/837,982; 25 pages.
Office Action dated Nov. 19, 2015 for U.S. Appl. No. 13/946,400; 24 pages.
Office Action dated Dec. 3, 2015 for U.S. Appl. No. 13/946,417; 29 pages.
Office Action dated May 10, 2016 for U.S. Appl. No. 13/468,478; 20 pages.
Office Action dated Jul. 15, 2016; for U.S. Appl. No. 13/837,982; 33 pages.
Office Action dated Oct. 20, 2016; for U.S. Appl. No. 13/946,400; 34 pages.
Office Action dated Mar. 15, 2017 from U.S. Appl. No. 13/946,417; 43 Pages.
Office Action dated Apr. 6, 2017 for U.S. Appl. No. 13/946,400; 36 Pages.
Office Action dated Aug. 4, 2017 for U.S. Appl. No. 13/837,982; 45 Pages.
Office Action dated Oct. 20, 2017 for U.S. Appl. No. 15/176,645; 71 pages.
Oniku et al., “High-Energy-Density Permanent Micromagnets Formed From Heterogeneous Magnetic Powder Mixtures”, Interdisciplinary Microsystems Group, Dept. of Electrical and Computer Engineering, University of Florida, Gainesville, FL 32611, USA; Preprint of MEMS 2012 Conf. Paper, 4 pages.
Park et al.; “Ferrite-Based Integrated Planar Inductors and Transformers Fabricated at Low Temperature;” IEEE Transactions on Magnetics; vol. 33, No. 5; Sep. 1997; pp. 3322-3324.
Park et al.: “Batch-Fabricated Microinductors with Electroplated Magnetically Anisotropic and Laminated Alloy Cores”, IEEE Transactions on Magnetics, vol. 35, No. 5, Sep. 1999, 10 pages.
Partin et al.; “Temperature Stable Hall Effect Sensors;” IEEE Sensors Journal, vol. 6, No. 1; Feb. 2006; pp. 106-110.
Pastre, et al.; “A Hall Sensor Analog Front End for Current Measurement with Continuous Gain Calibration;” IEEE Sensors Journal; vol. 7, No. 5; May 2007; pp. 860-867.
Pastre, et al.; “A Hall Sensor-Based Current Measurement Microsystem With Continuous Gain Calibration;” Research in Microelectronics and Electronics, IEEE vol. 2; Jul. 25, 2005; ISBN: 0-7803-9345-7; pp. 95-98.
PCT Invitation to Pay Additional Fees with Partial Search Report; dated Oct. 2, 2003 for PCT Pat. App. No. PCT/US03/02489, 3 pages.
PCT/US2014/018209 PCT Invitation to Pay Additional Fees dated Jul. 7, 2014 7 pages.
PCT Search Report dated Nov. 19, 2003 for PCT Pat. App. No. PCT/US03/02489; 5 pages.
PCT Search Report & Written Opinion for PCT/US2006/000363 dated May 11, 2006.
PCT Search Report and Written Opinion of the ISA for PCT/US2008/053551; dated Jul. 15, 2008; 11 pages.
PCT Search Report and Written Opinion of the ISA for PCT/US2009/048237 dated Aug. 25, 2009; 10 pages.
PCT Search Report and Written Opinion of the ISA for PCT/US2009/031776 dated Oct. 23, 2009.
PCT Search Report and Written Opinion for PCT/US2009/065044 dated Jan. 7, 2010.
PCT Search Report and Written Opinion of the ISA for PCT/US2010/024256 dated Aug. 11, 2010.
PCT Search Report and Written Opinion of the ISA for PCT/US2010/042694 dated Sep. 27, 2010.
PCT Search Report and Written Opinion of the ISA for PCT Pat. App. No. PCT/US2012/032315; dated Jun. 22, 2012; 16 pages.
PCT Search Report and Written Opinion of the ISA for PCT/US2013/037065 dated Jul. 17, 2013; 13 Pages.
PCT Search Report and Written Opinion of the ISA for PCT/US2014/018209 dated Sep. 5, 2014; 22 Pages.
PCT Search Report and Written Opinion of the ISA dated Oct. 28, 2014 for Int'l PCT Application PCT/US2014/044991; 12 pages.
Search Report and Written Opinion of the ISA dated Nov. 3, 2014 for Int'l PCT Application PCT/US2014/044993; 13 pages.
PCT International Search Report and Written Opinion dated Jul. 20, 2017 for PCT/US2017/033526; 17 pages.
PCT International Preliminary Report on Patentability for PCT/US2008/053551; dated Oct. 8, 2009; 7 pages.
PCT International Preliminary Report on Patentability and Written Opinion dated Sep. 10, 2010 for PCT/US2009/031776.
International Preliminary Report on Patentability for PCT/US2009/048237 dated Feb. 10, 2011, 9 pages.
PCT International Preliminary Report on Patentability and Written Opinion of the ISA; dated Jun. 7, 2011; for PCT Pat. App. No. PCT/US2009/065044; 7 pages.
PCT International Preliminary Report on Patentability and Written Opinion of the ISA for PCT Pat. App. No. PCT/US2010/024256; dated Sep. 1, 2011; 9 pages.
PCT International Preliminary Report on Patentability and Written Opinion of the ISA; dated Feb. 2, 2012; for PCT Pat. App. No. PCT/US2010/042694; 11 sheets.
PCT International Preliminary Report on Patentability and Written Opinion of the ISA; dated Nov. 20, 2014; for PCT Pat. App. No. PCT/US2013/037065; 11 sheets.
PCT International Preliminary Report on Patentability dated Jan. 19, 2016 for Int'l PCT Application PCT/US2014/044991; 8 pages.
Popovic; “Sensor Microsystems;” Proc. 20th International Conference on Microelectronics (MWIL 95); vol. 2, NIS, Serbia, Sep. 12-14, 1995; pp. 531-537.
Preliminary Amendment filed on Oct. 5, 2010 for U.S. Appl. No. 12/706,318.
Randhawa; “Monolithic Integrated Hall Devices in Silicon Circuits;” Microelectronics Journal; vol. 12, No. 6; Sep. 14-17, 1981; pp. 24-29.
Response to Office Action filed Aug. 10, 2011; for U.S. Appl. No. 12/183,367; 13 pages.
Response to EP Official Communication dated Feb. 23, 2012 for EP. Pat. App. No. 10739429.8; filed on Sep. 4, 2012, 21 pages.
Response to Office Action filed Jan. 17, 2012; for U.S. Appl. No. 12/183,367; 15 pages.
Response to Chinese Office Action dated May 3, 2012; for Chinese Pat. App. No. 200980129766.7; 10 pages.
Response to Restriction Requirement filed May 9, 2012; for U.S. Appl. No. 12/183,367; 2 pages.
Request for Continued Examination; from U.S. Appl. No. 12/959,672; 2 pages.
Response to Office Action/Restriction Requirement dated May 14, 2010 for U.S. Appl. No. 12/037,393, 6 pages.
Response to Office Action dated Jun. 30, 2010 for U.S. Appl. No. 12/037,393; 35 pages.
Response to Office Action dated Jan. 15, 2014 for U.S. Appl. No. 13/468,478, filed Jun. 12, 2014; 11 Pages.
Response filed Apr. 3, 2015; to Office Action dated Jan. 5, 2015; for U.S. Appl. No. 13/946,400; 13 pages.
Response to Final Office Action dated Jul. 17, 2014 for U.S. Appl. No. 13/468,478, filed Jan. 19, 2015; 12 Pages.
Response filed on Jun. 19, 2015 to Office Action dated Mar. 20, 2015; for U.S. Appl. No. 13/946,417; 15 pages.
Response to Office Action dated Feb. 12, 2015 for U.S. Appl. No. 13/468,478, filed Jun. 18, 2015; 11 Pages.
Response dated Dec. 7, 2015 to Final Office Action dated Jul. 8, 2015; for U.S. Appl. No. 13/837,982; 12 pages.
Response dated Nov. 9, 2015 to Final Office Action dated Aug. 28, 2015; for U.S. Appl. No. 13/946,417; 14 pages.
Response to Final Office Action dated Sep. 16, 2015 for U.S. Appl. No. 13/468,478, filed Jan. 14, 2016; 15 Pages.
Response dated Mar. 3, 2016 to Office Action dated Dec. 3, 2015; for U.S. Appl. No. 13/946,417; 17 pages.
Response to Office Action dated May 10, 2016 for U.S. Appl. No. 13/468,478, filed Oct. 3, 2016; 17 Pages.
Response filed Oct. 14, 2016 to the Office Action dated Jul. 15, 2016; for U.S. Appl. No. 13/837,982; 15 pages.
Response filed on Jan. 19, 2017 to Final Office Action dated Oct. 20, 2016; for U.S. Appl. No. 13/946,400; 13 Pages.
Response to Oct. 6, 2016 Final Office Action from U.S. Appl. No. 13/946,417, filed Jan. 24, 2017; 14 Pages.
Response to U.S. Final Office Action dated Oct. 20, 2016 (w/RCE) for U.S. Appl. No. 13/946,400; Response filed on Feb. 23, 2017; 17 Pages.
Response (with Amended Claims in English) to Japanese Office Action dated Feb. 13, 2017 for Japanese Application No. 2015-511491; Response filed on Apr. 11, 2017; 9 Pages.
Response (with RCE) to U.S. Final Office Action dated Jan. 26, 2017 for U.S. Appl. No. 13/837,982; Response filed on Apr. 26, 2017; 16 Pages.
Response to Final Office Action dated Feb. 10, 2017 for U.S. Appl. No. 13/468,478, filed May 3, 2017; 9 Pages.
Response to Office Action filed on Jun. 30, 2017 for U.S. Appl. No. 13/946,400; 12 pages.
Response to Office Action dated Aug. 4, 2017 for U.S. Appl. No. 13/837,982, filed Nov. 6, 2017; 15 Pages.
Request for Continued Examination dated Jan. 19, 2015; for U.S. Appl. No. 13/468,478; 3 pages.
Request for Continued Examination dated Dec. 7, 2015; for U.S. Appl. No. 13/837,982; 1 page.
Request for Continued Examination dated Jan. 14, 2016; for U.S. Appl. No. 13/468,4/8; 3 pages.
Robert Bosch GMBH Stuttgart; “Active Sensor for ABS/ASR/VDC-Systems with 2-Wire-Current Interface;” Specification TLE4941/TLE4942; Version 5; Jun. 25, 2000; 44 pages.
Ruther et al.; “Integrated CMOS-Based Sensor Array for Mechanical Stress Mapping;” 5th IEEE Conference on Sensors, Oct. 2007; pp. 1131-1134.
Ruther et al.; “Thermomagnetic Residual Offset in Integrated Hall Plates;” IEEE Sensors Journal; vol. 3, No. 6; Dec. 2003; pp. 693-699.
Sargent; “Switched-capacitor IC controls feedback loop;” EDN; Design Ideas; Feb. 17, 2000; pp. 154 and 156.
Schneider; “Temperature Calibration of CMOS Magnetic Vector Probe for Contactless Angle Measurement System,” IEDM 1996 pp. 533-536.
Schott et al.; “Linearizing Integrated Hall Devices;” 1997 International Conference on Solid-State Sensors and Actuators, Jun. 16-19, 1997; pp. 393-396.
Schott, et al.; “CMOS Single-Chip Electronic Compass with Microcontroller;” IEEE Journal of Solid-State Circuits; vol. 42, No. 12; Dec. 2007; pp. 2923-2933.
Simon et al.; “Autocalibration of Silicon Hall Devices;” 8th International Conference on Solid-State Sensors and Actuators; vol. 2; Jun. 25, 1995; pp. 237-240.
Smith et al.; “Low Magnetic Field Sensing with GMR Sensors;” Sensor Magazine; Part 1; Sep. 1999; http://archives.sensorsmag.com/articles/0999/76mail.shtml; pp. 1-8.
Smith et al.; “Low Magnetic Field Sensing with GMR Sensors;” Sensor Magazine; Part 2; Oct. 1999; http://archives.sensorsmag.com/articles/1099/84/mail.shtml; pp. 1-11.
Steiner et al.; “Double-Hall Sensor with Self-Compensated Offset;” International Electron Devices Meeting; Dec. 7, 1997; ISBN: 0-7803-4100-7; pp. 911-914.
Steiner et al; Offset Reduction in Hall Devices by Continuous Spinning Current Method; Sensors and Actuators A66; 1998; pp. 167-172.
Stellrecht et al.; Characterization of Hygroscopic Swelling Behavior of Mold Compounds and Plastic Packages; IEEE Transactions on Components and Packaging Technologies; vol. 27, No. 3; Sep. 2004; pp. 499-506.
Tian et al.; “Multiple Sensors on Pulsed Eddy-Current Detection for 3-D Subsurface Crack Assessment;” IEEE Sensors Journal, vol. 5, No. 1; Feb. 2005; pp. 90-96.
Trontelj et al; “CMOS Integrated Magnetic Field Source Used as a Reference in Magnetic Field Sensors on Common Substrate;” WEP 1-6; IMTC; May 1994; pp. 461-463.
Udo; “Limits of Offset Cancellation by the Principle of Spinning Current Hall Probe;” Proceedings of IEEE Sensors; Oct. 2004; pp. 1117-1120.
Voluntary Amendment dated Nov. 2, 2016 with English claims for Chinese Application No. 201480040243.6; 13 pages.
Voluntary Amendment with English Claims dated Nov. 7, 2016 for Korean App. No. 10-2016-7004178; 15 Pages.
Wu, et al.; “A Chopper Current-Feedback Instrumentation Amplifier with a 1mHz 1/f Noise Corner and an AC-Coupled Ripple-Reduction Loop;” IEEE International Solid-State Circuits Conference; Feb. 10, 2009; pp. 322-324.
Zou et al.; “Three-Dimensional Die Surface Stress Measurements in Delaminated and Non-Delaminated Plastic Packages;” 48th Electronic Components and Technology Conference; May 25, 1998; pp. 1223-1234.
Response to U.S. Non-Final Office Action dated Feb. 19, 2021 for U.S. Appl. No. 16/856,582; Response Filed Mar. 2, 2021; 11 Pages.
U.S. Office Communication dated May 28, 2021 for U.S. Appl. No. 16/856,582; 2 Pages.
Response to U.S. Office Communication dated May 28, 2021 for U.S. Appl. No. 16/856,582; Response filed Jun. 3, 2021; 11 Pages.
U.S. Final Office Action dated Sep. 14, 2021 for U.S. Appl. No. 16/856,582; 21 Pages.
Response to U.S. Final Office Action dated Sep. 14, 2021 for U.S. Appl. No. 16/856,582; Response filed on Dec. 14, 2021; 13 Pages.
U.S. Notice of Allowance dated Feb. 14, 2022 for U.S. Appl. No. 16/856,582; 12 Pages.
European Examination Report dated Oct. 14, 2022 for European Application No. 14742423.8; 7 Pages.
Response to European Official Communication dated Oct. 14, 2022 for European Application No. 14742423.8; Response filed Feb. 7, 2023; 71 Pages.
European Intention to Grant dated Mar. 10, 2021 for European Application No. 16193227.2; 7 Pages.
European Examination Report dated Jul. 28, 2022 for European Application No. 14708772.0; 9 Pages.
Response to European Examination Report dated Jul. 28, 2022 for European Application No. 14708772.0; Response filed Nov. 16, 2022; 13 Pages.
European Intention to Grant dated Feb. 23, 2022 for European Application No. 18723635.1; 7 Pages.
Response (with Amended Specification) to European Rule 71(3) dated Feb. 23, 2022 for European Application No. 18723635.1; Response filed Jun. 20, 2022; 14 Pages.
2nd European Intention to Grant dated Jul. 5, 2022 for European Application No. 18723635.1; 7 Pages.
Extended European Search Report dated Oct. 7, 2022 for European Application No. 22180130.1; 13 Pages.
1st Chinese Office Action (with English Translation) dated Jun. 2, 2021 for Chinese Application No. 201880034849.7; 29 Pages.
Response (with English Translation) to 1st Chinese Office Action dated Jun. 2, 2021 for Chinese Application No. 201880034849.7; Response filed on Jul. 30, 2021; 19 Pages.
2nd Chinese Office Action (with English Translation) dated Aug. 25, 2021 for Chinese Application No. 201880034849.7; 12 Pages.
Response (with English Translation) to 2nd Chinese Office Action dated Aug. 25, 2021 for Chinese Application No. 201880034849.7; Response filed Sep. 28, 2021; 60 Pages.
Chinese Notice of Allowance (with English Translation and Allowed Claims) dated Oct. 18, 2021 for Chinese Application No. 201880034849.7; 9 Pages.
Japanese Office Action (with English Translation) dated Dec. 1, 2021 for Japanese Application No. 2019-565299; 8 Pages.
Response (with Machine English Translation) to Japanese Office Action dated Dec. 1, 2021 for Japanese Application No. 2019-565299; Response Filed Mar. 1, 2022; 131 Pages.
Japanese Decision to Grant a Patent (with Machine English Translation from Epsacenet.com and Allowed Claims) dated Jun. 1, 2022 for Japanese Application No. 2019-565299; 10 Pages.
Korean Office Action (with Machine English Translation from Espacenet.com) dated May 31, 2022 for Korean Application No. 10-2019-7035013; 6 Pages.
Response (with Machine English Translation) to Korean Office Action dated May 31, 2022 for Korean Application No. 10-2019-7035013; Response Filed Jul. 13, 2022; 33 Pages.
U.S. Non-Final Office Action dated Mar. 24, 2021 for U.S. Appl. No. 15/606,332; 23 Pages.
Response to U.S. Non-Final Office Action dated Mar. 24, 2021 for U.S. Appl. No. 15/606,332; Response filed Jun. 24, 2021; 21 Pages.
U.S. Final Office Action dated Feb. 8, 2022 for U.S. Appl. No. 15/606,332; 22 Pages.
RCE and Response to U.S. Final Office Action dated Feb. 8, 2022 for U.S. Appl. No. 15/606,332; Response filed Apr. 26, 2022; 24 Pages.
U.S. Notice of Allowance dated May 17, 2022 for U.S. Appl. No. 15/606,332; 11 Pages.
European Examination Report dated Aug. 5, 2021 for European Application No. 18726263.9; 4 Pages.
Response to European Examination Report dated Aug. 5, 2021 for European Application No. 18726263.9; Response filed May 6, 2022; 107 Pages.
Korean Office Action (with Machine English Translation from Espacenet.com) dated Jun. 29, 2022 for Korean Application No. 10-2019-7035015; 6 Pages.
Response (with Machine English Translation from Espacenet.com) to Korean Office Action dated Jun. 29, 2022 for Korean Application No. 10-2019-7035015; Response filed on Aug. 12, 2022; 40 pages.
Japanese 1st Office Action (w/Machine English Translation) dated Dec. 1, 2021 for Japanese Application No. 2019-565248; 44 Pages.
Response (with Machine English Translation from Espacenet.com) to Japanese 1st Office Action dated Dec. 1, 2021 for Japanese Application No. 2019-565248; Response filed Mar. 1, 2022; 25 Pages.
Japanese 2nd Office Action (w/machine English translation) dated Jul. 28, 2022 for Japanese Application No. 2019-565248; 8 pages.
Response (w/machine English translation) to Japanese 2nd Office Action dated Jul. 28, 2022 for Japanese Application No. 2019-565248; Response filed Oct. 27, 2022; 14 Pages.
Japanese Decision to Grant (w/machine English translation) dated Jul. 28, 2022 for Japanese Application No. 2019-565248; 9 Pages.
Chinese 1st Office Action (with English Translation) dated Mar. 3, 2021 for Chinese Application No. 201880034743.7; 22 Pages.
Response to Chinese 1st Office Action dated Mar. 3, 2021 for Chinese Application No. 201880034743.7; Response filed on Jul. 16, 2021; 23 Pages.
2nd Chinese Office Action (with English Translation) dated Oct. 9, 2021 for Chinese Application No. 201880034743.7; 19 Pages.
Response (with English Translation) to 2nd Chinese Office Action dated Oct. 9, 2021 for Chinese Application No. 201880034743.7; Response filed Dec. 23, 2021; 20 Pages.
Chinese Notice of Granting a Patent (with English Translation and Allowed Claims) dated Feb. 11, 2022 for Chinese Application No. 201880034743.7; 13 Pages.
U.S. Restriction Requirement dated Feb. 2, 2023 for U.S. Appl. No. 17/810,461; 12 Pages.
Response to U.S. Restriction Requirement dated Feb. 2, 2023 for U.S. Appl. No. 17/810,461; Response filed Feb. 10, 2023; 1 Page.
Chinese Office Action (w/machine English translation) dated Jul. 27, 2022 for Chinese Application No. 201711292323.2; 33 pages.
1st Chinese Office Action (with English Translation) dated Jun. 18, 2021 for Chinese Application No. 201880034726.3; 21 Pages.
Response (with English Translation) to 1st Chinese Office Action dated Jun. 18, 2021 for Chinese Application No. 201880034726.3; Response filed on Aug. 23, 2021; 18 Pages.
Chinese 2nd Office Action (with English Translation) dated Oct. 21, 2021 for Chinese Application No. 201880034726.3; 10 Pages.
Response to Chinese Office Action (with English translation) filed on Dec. 31, 2021 for Chinese Application No. 201880034726.3; 33 Pages.
Chinese Notice of Allowance (with English Translation and Allowed Claims) dated Mar. 21, 2022 for Chinese Application No. 201880034726.3; 9 Pages.
Japanese 1st Office Action (with English translation) dated Nov. 2, 2021 for Japanese Application No. 2019-565298; 14 pages.
Response (with Machine English Translation) to Japanese 1st Office Action dated Nov. 2, 2021 for Japanese Application No. 2019-565298; Response Filed Feb. 1, 2022; 24 Pages.
Japanese 2nd Office Action (with English translation) dated Apr. 1, 2022 for Japanese Application No. 2019-565298; 6 pages.
Response (with English translation) to Japanese 2nd Office Action dated Apr. 1, 2022 for Japanese Application No. 2019-565298; Response filed May 12, 2022; 16 Pages.
Japanese Decision to Grant a Patent (with Machine English Translation from Espacenet.com) dated May 31, 2022 for Japanese Application No. 2019-565298; 9 Pages.
European Intention to Grant dated Jun. 9, 2022 for European Application No. 18723644.3; 6 Pages.
Korean Office Action (w/machine English translation) dated Aug. 31, 2022 for Korean Application No. 10-2019-7035216; 10 pages.
Response (with Machine English Translation) to Korean Office Action dated Aug. 31, 2022 for Korean Application No. 10-2019-7035216; Response filed Oct. 31, 2022; 35 Pages.
Japanese Decision of Refusal (with English Translation) dated Jul. 15, 2021 for Japanese Application No. 2019-223457; 12 Pages.
U.S. Preliminary Amendment filed on Feb. 27, 2023 for U.S. Appl. No. 17/810,461; 9 Pages.
Korean Office Action (with English Translation) dated Feb. 24, 2023 for Korean Application No. 10-2019-7035013; 9 Pages.
Korean Office Action (with English Translation) dated Feb. 24, 2023 for Korean Application No. 10-2019-7035015; 7 Pages.
U.S. Non-Final Office Action dated Mar. 14, 2023 for U.S. Appl. No. 17/810,461; 20 Pages.
Related Publications (1)
Number Date Country
20180011150 A1 Jan 2018 US
Continuations (1)
Number Date Country
Parent 13468478 May 2012 US
Child 15709739 US