This disclosure relates generally to amplifiers, and, more particularly, to methods and apparatus to control rail-to-rail class AB amplifiers.
An amplifier is an electronic device that uses transistors or the like to produce an output signal that is an amplified version of an input signal. Types of amplifiers may be broken into classes based on their output performance. For example, class A amplifiers amplify over an entire input cycle such that the output signal is an exact scaled-up replica of the input without clipping, whereas class B amplifiers only amplify half of the input wave cycle. As compared to class A amplifiers, class B amplifiers generate a large amount of output distortion, but have greater efficiencies than do class A amplifiers. A class AB amplifier uses a complimentary pair of class B amplifiers in a push-pull configuration. In such an arrangement, the complementary amplifiers amplify each of the opposite halves of the input signal, which are then recombined at an output. Class AB amplifiers are more efficient than class A amplifiers and have less distortion than class B amplifiers.
Amplifiers can be designed to increase the signal voltage and/or current of an input signal. In terms of supply voltage, amplifiers can operate from double-sided or balanced supplies, which have positive and negative voltage supplies (+ and − supply rails), also referred to as split supplies. The different methods of supplying power result in many different methods of bias to ensure proper operation of the amplifiers. Good control of bias current is necessary because overall current consumption of amplifier devices is a consideration.
As described in further detail below, the output quiescent current controller 110 is configured to match the drain-to-source voltage (Vds) conditions in the output stage 112 to that of associated control transistors within the output quiescent current controller 110 through a closely-coupled current control loop. As shown in
While the following describes numerous configurations that may be used to implement the output quiescent current controller 110 and/or the output stage 112, those having ordinary skill in the art will readily appreciate that variations of the circuit and systems described herein may be used to control the quiescent current of an amplifier. Furthermore, those having ordinary skill in the art will readily appreciate that one or more output stages (e.g., stages like the output stage 112) may be used. The example amplifier may contain a plurality of active devices such as, for example, transistors. A transistor may be of any type of transistor such as, for example, bipolar junction transistor (BJT), field effect transistor (FET) (e.g., complimentary metal-oxide semiconductor transistors (CMOS)), etc. Specifications for each transistor may include, for example, the length of the transistor (1) and the width of the transistor (w). The length of the transistor is the distance from the drain of the transistor to the source of the transistor. A shorter length of the transistor allows for a faster transfer of the signal than across a transistor with a greater length. The width of the transistor refers to the greatest amount of current that is allowed to flow across the transistor. A larger width of the transistor may allow a greater current flow with less loss than a transistor with a more narrow width.
To maintain a relatively constant quiescent current through the output transistors, the example amplifier of
To output a signal, the output stage 112 may be configured to have a Monticelli topology, which is well known to those having ordinary skill in the art. In particular, the output stage 112 may include output transistors 122 and 124, which are respectively PMOS (i.e., p-channel) and NMOS (i.e., n-channel) devices that are coupled to the V+ and V− supplies, respectively. The output stage 112 also includes Monticelli bias transistors 126, 128, which are also PMOS and NMOS devices, respectively. The bias and output transistors 126, 128 are configured in a Darlington transistor topology, wherein the PMOS output and bias transistors 122, 126 provide an output for the PMOS portion of the amplifier 100 and the NMOS output and bias transistors 124, 128 provide an output for the NMOS portion of the amplifier 100. Current sources 130 and 132 are respectively coupled to the gates of the output transistors 122, 124, and capacitors 134, 136 are respectively coupled to the gates of the bias transistors 126, 128 and the supply rails.
The source of the output transistor 124 is coupled to the low voltage supply rail V−. The drain of the output transistor 124 is coupled to the drain of the output transistor 122. The current flowing through the output transistors 122 and 124 is represented by iQ. The gate of the output transistor 124 is coupled to the source of the bias transistor 128, to the low voltage supply rail (V−) via the current source 132 (which passes a current of i1), and to the drain of the bias transistor 126. The current flowing through the bias transistor 126 is represented as iD10.
The source of bias transistor 128 is coupled to the gate of output transistor 124, the low voltage supply rail (V−) via current sink 132, and to the drain of the bias transistor 126. The drain of the bias transistor 128 is coupled to the gate of the output transistor 122. The current flowing through the bias transistor 128 is referred to as iD2. The gate of the output transistor 122 is also coupled to the high voltage supply rail V+ via current source 130, and the source of the bias transistor 126. The gate of the bias transistor 128 is coupled to the low voltage supply rail (V−) via the capacitor 136 and is also coupled to the nmos_gate node 116, which is coupled to the output quiescent current controller 110.
The source of output transistor 122 is coupled to the high voltage supply rail (V+). The drain of the output transistor 122 provides an output voltage and is coupled to the drain of the output transistor 124. The gate of the output transistor 122 is coupled to the drain of bias transistor 128 which provides a current referred to as iD2. The gate of the output transistor 122 is also coupled the high voltage supply rail (V+) via the current source 130 and to the source of bias transistor 126.
The source of the bias transistor 126 is coupled to the gate of the output transistor 122 and to the high voltage supply rail (V+) via the current source 130, and the drain of bias transistor 128. The drain of bias transistor 126 is coupled to the low voltage supply rail (V−) via the current sink 132 and the gate of the output transistor 124. The gate of the bias transistor 126 is coupled to the high voltage supply rail (V+) via the capacitor 134 and to the node pmos_gate 114.
Further detail regarding an example output stage 112 is shown in
This topology results in a situation in which a small variation in Vds, results in a large variation in drain-to-source current; this is known as the Early effect. As shown in
During operation, an increase in supply voltage, ΔV, usually results in an increase in current iQ in the PMOS portion of the output stage 112 (e.g., the output transistor 122) The example PMOS output quiescent current controller 302 of
To maintain a constant quiescent current at the output of the NMOS portion of the output device (e.g., the output transistor 124), the example output quiescent current controller 110 of
During operation, an increase in supply voltage, ΔV, usually results in an increase in current iQ in the NMOS portion of the output device The example NMOS output quiescent current controller 304 then provides less voltage to the nmos_gate 116 of
The PMOS output quiescent current controller 302 may contain an n-channel cascode transistor 402 having a gate that is set at approximately 1 volt above the low voltage supply rail V−, herein referred to as Vcasc2. The drain of a transistor Q15 is coupled to a resistor R2 which in turn is coupled to the low voltage supply rail V−. The gate of the transistor Q15 is set to the drain of the transistor Q15. The source of the transistor Q15 is coupled to the drain of a transistor Q16. The gate of the transistor Q16 is set by the drain of the transistor Q16. The source of the transistor Q16 is coupled to a resistor R1, which is coupled to the high voltage supply rail V+. The gate of a transistor Q14 is set at the drain of the transistor Q15, which passes a current defined as iD15. The voltage at the source of a transistor Q15 is ΔV/2+V−. Hence, the source of transistor Q14 is approximately at the voltage ΔV/2+V−. In one example, the width of the transistor Q15 is be equal to the width of transistor Q16, and the length of Q15 is to be equal to the length of Q16, as shown in the equations:
WQ15=WQ16
LQ15=LQ16
The drain of the transistor Q14 is coupled to the low voltage supply rail V− via a current sink i10 and shares current with the cascode transistor 402. The source of the transistor Q14 passes current iD14 and is coupled with the low voltage supply rail V− via a current sink i9 and is further coupled to the drain of a transistor Q12.
Turning to the cascode transistor 402, the gate of the cascode transistor, Vcasc2, is set to approximately one volt greater than the desired voltage at the low voltage supply rail V−. The source of the cascode transistor 402 shares the current from the low voltage supply rail V− via the current sink i10 with the drain of the transistor Q14. The drain of cascode transistor 402 is coupled to the gate of a transistor Q11, also referred to as the pmos_gate 114, to the PMOS portion of the output stage 112, and to the high voltage rail V+ via current source i7. A preferred circuit configuration, shown in the following equation, is to have the ratio of the width-to-length ratios of Q14 and Q15 approximately equal to the ratio of the currents iD14 and iD15.
(W/L)Q14/(W/L)Q15=iD14/iD15
As shown in
The gate of the transistor Q11 is coupled to the drain of the cascode transistor 402 and to the output device such as, for example, the example Monticelli bias transistor 126 of
vdsQ11=ΔV−(vgsQ12+vgsQ13)
The source of the transistor Q13 is coupled to the low voltage supply rail V−. The gate of the transistor Q13 is set by the drain of the transistor Q13. The drain of the transistor Q13 is coupled with the drain of the transistor Q11.
The NMOS output quiescent current controller 304 of
The drain of the transistor Q7 is coupled to a resistor R3, which in turn is coupled to the high voltage supply rail V+. The gate of the transistor Q7 is connected to the drain of the transistor Q7. The source of the transistor Q7 is coupled to the drain of the transistor Q8. The gate of the transistor Q8 is set by the drain of the transistor Q8. The source of the transistor Q8 is coupled to a resistor R4 that, in turn, is coupled to the low voltage supply rail V−. The current flowing though R3, R4, Q7, and Q8 is designated as iD7. The gate of the transistor Q6 is coupled to the gate and drain of Q7. Thus, the voltage at the gate of Q8 is ΔV/2+V−. In some examples, the width of the transistor Q7 must be equal to the width of the transistor Q8, and the length of Q7 must be equal to Q8, as shown in the following equations:
WQ7=WQ8
LQ7=LQ8
The drain of the transistor Q6 is coupled to the high voltage supply rail V+ via current source i5 and shares current with the cascode transistor 502. The source of the transistor Q6, is coupled with the high voltage supply rail V+ via current source i4 and further coupled to the drain of the transistor Q4.
Turning to the cascode transistor 502, the gate of the cascode transistor 502 is set to approximately 1 volt less than the high voltage supply rail V+. The source of the cascode transistor 502 shares the current from the high voltage supply rail V+ via current source i5 with the drain of the transistor Q6. The drain of the cascode transistor 502 is coupled to the gate of the transistor Q3, also referred to as the nmos_gate 116, which is coupled to the bias transistor 128 of the output stage 112, and to the low voltage supply rail V− via current sink i2. A preferred circuit configuration, shown in the following equation, is to have the ratio of the width-to-length ratios of Q6 and Q7 approximately equal to the ratio of the currents iD6 and iD7.
(W/L)Q6/(W/L)Q7=iD6/iD7
As explained above, the drain of the transistor Q4 is coupled to the source of the transistor Q6 and coupled with the high voltage supply rail V+ via current source i4. The source of the transistor Q4 is coupled to the low voltage supply rail V. The gate of the transistor Q4 is coupled to the source of the transistor Q3. In one example, the transistors Q3 and Q4 are designed to match the transistors 128 and 124, respectively.
The gate at the transistor Q3 is coupled to the nmos_gate 116 of
vdsQ3=ΔV−(vgsQ4+vgsQ5)
The source of the transistor Q5 is coupled to the high voltage supply rail V+. The drain of the transistor Q5 is set by the gate of the transistor Q5. The drain of the transistor Q5 is coupled with the drain of the transistor Q3.
Turning to the NMOS portion of the amplifier, an NMOS translinear loop is set up where the source of the transistor 124 is coupled to the low voltage supply rail V−. The gate of the transistor 124 is coupled to the source of the transistor 128. The gate of the transistor 128 is coupled to the gate of the transistor Q3. The source of the transistor Q3 is coupled to the gate of the transistor Q4 and the source of the transistor Q4 is coupled to the low voltage supply rail V−. In one implementation, the translinear loop has the characteristic that the length of the transistor 124 and the length of the transistor Q4 are approximately equal and the width of the two the transistors, 124 and Q4, are proportional. Likewise, the length of the transistor 128 and the length of the transistor Q3 are approximately equal and the width of the two the transistors, 128 and Q3, are proportional.
The current through the transistor Q3 is precisely set by current sink i3. The Vds of Q3 is set by Q4 and Q5 and is closely matched to that of 128. That is, the drain-to-source voltage at the transistor Q3 is equal to the supply voltage ΔV minus the gate-to-source voltage at the transistor Q4 minus the gate-to-source voltage at the transistor Q5, as shown in the equation:
vdsQ3=ΔV−(vgsQ4+vgsQ5)
Because the gate of the transistor Q3 is coupled to the gate of the transistor 128 where the source of the transistor 128 is coupled to the gate of the transistor 124 and the drain of the transistor 128 is coupled to the gate of the transistor 122, the drain-to-source voltage at the transistor 128 is virtually the same as the drain-to-source voltage of transistor Q3. Therefore the Vds of transistor 128 matches that of transistor Q3.
To bias the output to the mid-rail (i.e., the point between the high voltage supply rail and the low voltage supply rail, ΔV/2+V−) the drain-to-source voltage of the transistor Q4 must also match the drain-to-source voltage of the transistor 124 when no signal is being passed through the transistor 128 and 124, in other words the drain-to-source voltage of the transistor Q4 is ΔV/2+V−.
To establish a voltage at the mid-rail, resistor R3 and resistor R4 are equal, the voltage across the transistor Q7 and the transistor Q8 are equal and the gate-to-source voltage across the transistor Q6 must be approximately the same as that of the transistors Q7 and Q8. The source of the transistor Q6 is the same voltage as the source of the transistor Q7, so the source of the transistor Q6 is ΔV/2+V−, and is coupled to the drain of the transistor Q4. Thus the drain-to-source voltage of the transistor Q4 is established. The transistor Q4 then must have its current set up. By adjusting the current at the transistor Q4 the current at iQ is also adjusted accordingly.
To set up the current at the transistor Q4, the current at current source i5 is split to the drain of the transistor Q6 and to the source of the cascode transistor 502. The gate of the cascode transistor 502 is set to a steady voltage below the voltage at the high voltage supply rail V+−˜1 volt. The current flowing through the cascode transistor 502 flows to the gate of the transistor bias transistor 128 and the gate of the transistor Q3. Therefore, the current at iD6 must be equal to the current at the high voltage supply rail V+ via current source i5 minus the current flowing to the lower voltage supply rail V− via current sink i2, as shown in the equation:
iD6=i5−i2
The current at iD6 is summed with the current flowing through i4 to the drain of the transistor Q4. Therefore the current flowing from the source of the transistor Q4 must be equal to the current flowing through iD6 plus the current flowing from the high voltage supply rail V+ via current source i4, as shown in the equation:
iD4=iD6+i4
To ensure proper biasing, the feedback voltage at the gate of the transistor Q3 must occur. So, if the voltage at the drain of the transistor Q4 is too low, i.e. the voltage at the gate of the transistor Q4 is too high, the source of the transistor Q6 is pulled down. This results in more current flowing through the transistor Q6 taking most of the current from current source i5, allowing less current to flow through the cascode transistor 502 to the gate of the transistor Q3, thereby decreasing the voltage at the gate of Q3. Likewise, if the voltage at the drain of the transistor Q4 is too high, i.e. the voltage at the gate of the transistor Q4 is too low; the voltage at the source of the transistor Q6 is pulled up. This results in less current flowing through the transistor Q6 thereby allowing most of the current from current source i5 to flow through the cascode transistor 502, thereby increasing the voltage at the gate of the transistor Q3.
If the current at the cascode transistor 502 is greater than the current at current sink i2, the voltage is increased at the gate of the transistor Q3, thus pulling up the gate of Q4, until the current at the cascode transistor 502 is equal to the current at i2. Thus, the current is regulated through the transistor Q4, and because Q4 is matched both geometrically and in its Vds to 124, the quiescent current at the output is held approximately constant.
Now, turning to the PMOS portion of the amplifier, a PMOS translinear loop is set up where the source of the transistor 122 is coupled to the high voltage supply rail V+. The gate of the transistor 122 is coupled to the source of the transistor 126. The gate of the transistor 126 is coupled to the gate of the transistor Q11. The source of the transistor Q11 is coupled to the gate of the transistor Q12 and the source of the transistor Q12 is coupled to the high voltage supply rail V+. In one implementation of the translinear loop, the length of the transistor 122 and the length of the transistor Q12 are approximately equal and the width of the two transistors, 122 and Q12, are approximately proportional. Likewise, the length of the transistor 126 and the length of the transistor Q11 are approximately equal and the width of the two transistors, 126 and Q11, are approximately proportional.
The current through the transistor Q11 is precisely set by the current source i8. the Vds of Q11 is set by Q12 and Q13 and is closely matched to that of 126. That is, the drain-to-source voltage at the transistor Q11 is equal to the supply voltage ΔV minus gate-to-source voltage at the transistor Q12 minus the gate-to-source voltage at the transistor Q13, as shown in the equation:
vdsQ11=ΔV−(vgsQ12+vgsQ13)
Because the gate of the transistor Q11 is coupled to the gate of the transistor 126 where the source of the transistor 126 is coupled to the gate of the transistor 122 and the drain of the transistor 126 is coupled to the gate of the transistor 124, the drain-to-source voltage at the transistor 126 is virtually the same as the drain-to-source voltage at the transistor Q11. Therefore, the Vds of transistor 126 matches that of transistor Q11.
To bias the output to the mid-rail (i.e., the point between the high voltage supply rail and the low voltage supply rail, ΔV/2+V−) the drain-to-source voltage of the transistor Q12 must match the drain-to-source voltage of the transistor 122 when no signal is being passed through the transistor 122, in other words the drain-to-source voltage of the transistor Q12 must be ΔV/2+V−. To establish a voltage at the mid-rail, resistor R1 and resistor R2 must be equal, the voltage across the transistor Q15 and the transistor Q16 are equal and the gate-to-source voltage across the transistor Q14 must be approximately the same as that of the transistors Q15 and Q16. The source of the transistor Q14 is the same voltage as the source of transistor Q15, so the source of the transistor Q14 is ΔV/2+V− and is coupled to the drain of the transistor Q12. Thus, the drain-to-source voltage of the transistor Q12 is established. The transistor Q12 then must have its current set up. By adjusting the current at the transistor Q12 the current at iQ is also adjusted accordingly.
To set up the current at the transistor Q12, the current at current sink il0 is split to the drain of the transistor Q14 and to the source of the cascode transistor 402. The gate of the cascode transistor 402 is set to a steady voltage above the voltage on the low voltage supply rail with a value of V−+˜1 volt. The current flowing through the cascode transistor 402 flows to the gate of the transistor 126 and the transistor Q11. Therefore, the current at iD14 is equal to the current into the low voltage supply rail V− via current sink i10 minus the current flowing from the high voltage supply rail V+ via current source i7, as shown in the equation:
iD14=i10−i7
The current at iD14 is summed with the current flowing through current sink i9 to the drain of the transistor Q12, therefore the current flowing into the source of the transistor Q12 is equal to the current flowing through iD14 plus the current flowing into the low voltage supply rail V− via current sink i9, as shown in the equation:
iD12=iD14+i9
To ensure proper biasing, the feedback voltage at the gate of the transistor Q11 must occur. So, if the voltage at the drain of the transistor Q12 is too low, i.e. the voltage at the gate of the transistor Q12 is too high, the voltage at the source of the transistor Q14 is pulled down. This results in less current flowing through the transistor Q14 taking less current from current sink i10, allowing most of the current to flow through the n-channel cascode transistor 402, thereby decreasing the voltage at the gate of Q11. Likewise, if the voltage at the drain of the transistor Q12 is too high, i.e. the voltage at the gate of the transistor Q12 is too low; the voltage at the source of the transistor Q14 is pulled up. This results in more current flowing through the transistor Q14 taking most of the current from i10 allowing less current from current sink i10 to flow through the cascode transistor 402 increasing the voltage at the gate of the transistor Q11.
If the current at the cascode transistor 402 is less than the current at current source i7, the voltage is increased at the gate of the transistor Q11 until the current at the cascode transistor 402 is equal to the current at current source i7. Thus, the current is regulated through the transistor Q12, and because Q12 is matched both geometrically and in its Vds to 122, and the quiescent current at the output is held approximately constant.
Although certain apparatus constructed in accordance with the teachings of the invention have been described herein, the scope of coverage of this patent is not limited thereto. On the contrary, this patent covers every apparatus, method and article of manufacture fairly falling within the scope of the appended claims either literally or under the doctrine of equivalents.
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Number | Date | Country | |
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20090002070 A1 | Jan 2009 | US |