Claims
- 1. A method of forming an activated substrate, comprising:
providing a substrate comprising active oxygen atoms, active hydroxyl groups, alkoxy groups, halogens or a combination thereof, providing a substrate modifier having the formula 3 wherein each X on a given Si is independently selected from alkyl, aryl, hydroxy, alkoxy, aryloxy, halo, wherein at least one X on a given Si is a leaving group selected from alkoxy, halo, hydroxy and aryloxy; A and B are linkers selected from optionally substituted polyethyleneglycols, dicarboxylic acids, polyamines, alkyls, aryls, alkylaryls, and combinations thereof, may be the same or different, and may be branched, linear, cyclic, or combinations thereof, and Y and Z form a two or three carbon alkyl, aryl or alkylaryl group; and reacting the substrate modifier with the substrate by a condensation reaction to form an activated substrate.
- 2. A method of forming a chelating substrate, comprising:
performing the method of claim 1;providing a reagent that is a haloacetic acid; reacting the reagent with the activated substrate to form a chelator; and binding a metal ion selected from cobalt, nickel, copper and zinc to the chelator to form a tetracoordinate metal chelate with two available cis valencies, thereby converting the substrate into a metal-chelated substrate.
- 3. A method of depositing a protein on a substrate, comprising:
performing the method of claim 2;providing a histidine-containing protein wherein the number and location of the histidine residues within the protein allow binding of the protein to the two cis valencies on the metal chelate; and incubating the histidine-containing protein with the metal-chelated substrate so that the histidine-containing protein binds via the histidine residues to the metal chelate to form a protein-substrate complex.
- 4. The method of claim 3, wherein the protein-substrate complex forms a pattern on the substrate.
- 5. The method of claim 4, wherein the pattern is formed by stamping.
- 6. The method of claim 4, wherein the pattern is formed by photolithography.
- 7. The method of claim 4, wherein the pattern is formed by soft lithography.
- 8. The method of claim 4, wherein the pattern is formed by electron beam lithography.
- 9. The method of claim 4, wherein the pattern is formed by patterned deposition of the substrate modifier.
- 10. The method of claim 4, wherein the pattern is formed by patterned deposition of the reagent.
- 11. The method of claim 4, wherein the pattern is formed by patterned deposition of the histidine-containing protein.
- 12. The method of claim 4, wherein the pattern is formed by patterned activation or exposure of the substrate surface prior to reaction with the substrate modifier.
- 13. An activated substrate produced by the method of claim 1.
- 14. A metal-chelated substrate produced by the method of claim 2.
- 15. A protein-substrate complex produced by the method of claim 3.
- 16. A sensor comprising the protein-substrate complex of claim 15.
- 17. A biocatalyst comprising the protein-substrate complex of claim 15.
- 18. A microfluidic system comprising the protein-substrate complex of claim 15.
- 19. The protein-substrate complex of claim 15, wherein the histidine-containing protein is a green fluorescent protein.
- 20. The protein-substrate complex of claim 15, wherein the histidine-containing protein is a silicatein.
- 21. The protein-substrate complex of claim 20, wherein the silicatein is silicatein alpha.
- 22. The protein-substrate complex of claim 20, wherein the silicatein is silicatein beta.
- 23. A method of depositing silica or silicone on a substrate, comprising:
forming the protein-substrate complex of claim 20; contacting the protein-substrate complex with an optionally derivatized alkoxysilane, wherein the alkoxysilane is optionally derivatized with one or more optionally substituted alkyl groups, wherein said contacting is performed under conditions suitable for said silicatein to polymerize said optionally derivatized alkoxysilane to form a silica- or silicone-derivatized substrate.
- 24. The method of claim 22, wherein the optionally derivatized alkoxysilane is tetraethoxysilane.
- 25. The method of claim 22, wherein the optionally derivatized alkoxysilane is phenyltriethoxysilane.
- 26. The method of claim 22, wherein the optionally derivatized alkoxysilane is methyltriethoxysilane.
- 27. The method of claim 1, wherein the substrate modifier is reacted with the substrate after the substrate is formed.
- 28. The method of claim 1, wherein the substrate modifier is reacted with the substrate as the substrate is being formed.
- 29. The method of claim 1, wherein the substrate modifier is N, N′-(trimethoxysilylpropyl)ethylene diamine.
- 30. The method of claim 2, wherein the reagent is bromoacetic acid.
- 31. The method of claim 2, wherein the metal ion is a cobalt ion.
- 32. The method of claim 2, wherein the metal ion is a copper ion.
- 33. The method of claim 2, wherein the metal ion is a nickel ion.
- 34. A kit comprising:
a substrate modifier comprising a silane, a linker and an active group; a substrate comprising a reactive species that can react with the silane; a housing for retaining the substrate modifier and the substrate; instructions provided with said housing that describe how to use the components of the kit to link the substrate modifier to the substrate.
- 35. The kit of claim 34, further comprising a reagent comprising a functional group and a ligand for a metal ion.
RELATED APPLICATION DATA
[0001] This application claims the benefit of provisional application Serial No. 60/282,433 filed Apr. 7, 2001, the entire disclosure of which is herein incorporated by reference.
Provisional Applications (1)
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Number |
Date |
Country |
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60282433 |
Apr 2001 |
US |